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    12061C103KAT2A Price and Stock

    Kyocera AVX Components 12061C103KAT2A

    Multilayer Ceramic Capacitor, 0.01 uF, 100 V, ? 10%, X7R, 1206 [3216 Metric] - Tape and Reel (Alt: KGM31BR72A103KT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 12061C103KAT2A Reel 16,000 12 Weeks 4,000
    • 1 -
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    • 10000 $0.03169
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    12061C103KAT2A Ammo Pack 12 Weeks 1
    • 1 $0.229
    • 10 $0.229
    • 100 $0.086
    • 1000 $0.086
    • 10000 $0.086
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    Mouser Electronics 12061C103KAT2A 34,277
    • 1 $0.19
    • 10 $0.107
    • 100 $0.097
    • 1000 $0.073
    • 10000 $0.036
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    Newark 12061C103KAT2A Cut Tape 2,703 1
    • 1 $0.218
    • 10 $0.218
    • 100 $0.086
    • 1000 $0.086
    • 10000 $0.086
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    12061C103KAT2A Reel 4,000
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    • 10000 $0.056
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    12061C103KAT2A Reel 4,000
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    • 10000 $0.049
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    RS 12061C103KAT2A Bulk 2,819 1
    • 1 $0.093
    • 10 $0.089
    • 100 $0.079
    • 1000 $0.079
    • 10000 $0.079
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    12061C103KAT2A Bulk 4,000
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    • 10000 $0.05
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    Future Electronics 12061C103KAT2A Reel 4,000 14 Weeks 4,000
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    • 10000 $0.0325
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    12061C103KAT2A Reel 12 Weeks 8,000
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    Bristol Electronics 12061C103KAT2A 76,531
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    12061C103KAT2A 9,140 34
    • 1 -
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    • 100 $0.15
    • 1000 $0.045
    • 10000 $0.03
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    Quest Components 12061C103KAT2A 13,403
    • 1 $0.15
    • 10 $0.15
    • 100 $0.15
    • 1000 $0.15
    • 10000 $0.02
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    12061C103KAT2A 7,312
    • 1 $0.2
    • 10 $0.2
    • 100 $0.2
    • 1000 $0.04
    • 10000 $0.04
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    12061C103KAT2A 4,691
    • 1 $0.0464
    • 10 $0.0464
    • 100 $0.0464
    • 1000 $0.029
    • 10000 $0.0209
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    12061C103KAT2A 3,200
    • 1 $0.116
    • 10 $0.116
    • 100 $0.116
    • 1000 $0.0348
    • 10000 $0.0348
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    12061C103KAT2A 2,925
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $0.3
    • 10000 $0.2
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    12061C103KAT2A 1,864
    • 1 $0.116
    • 10 $0.116
    • 100 $0.116
    • 1000 $0.0348
    • 10000 $0.0348
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    TME 12061C103KAT2A 3,302 1
    • 1 $0.2449
    • 10 $0.1236
    • 100 $0.0541
    • 1000 $0.0344
    • 10000 $0.0292
    		Buy Now
    Avnet Abacus 12061C103KAT2A Reel 20,000 14 Weeks 4,000
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    Avnet Asia 12061C103KAT2A 4,000 14 Weeks 4,000
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    Component Electronics, Inc 12061C103KAT2A 2,500
    • 1 $0.58
    • 10 $0.58
    • 100 $0.43
    • 1000 $0.38
    • 10000 $0.38
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    New Advantage Corporation 12061C103KAT2A 16,000 1
    • 1 -
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    • 10000 $0.0324
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    Kyocera AVX Components KGM31BR72A103KT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V .01uF X7R 1206 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics KGM31BR72A103KT 12,790
    • 1 $0.23
    • 10 $0.135
    • 100 $0.085
    • 1000 $0.059
    • 10000 $0.041
    		Buy Now
    TTI KGM31BR72A103KT Reel 524,000 4,000
    • 1 -
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    • 10000 $0.034
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    Kyocera AVX Components 12061C103KAT4A

    Multilayer Ceramic Capacitors MLCC - SMD/SMT KGM31BR72A103KM NEW GLOBAL PN 100V .01uF A 581-KGM31BR72A103KM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 12061C103KAT4A
    • 1 $0.27
    • 10 $0.167
    • 100 $0.097
    • 1000 $0.066
    • 10000 $0.049
    		Get Quote

    KOA Corporation 12061C103KAT2A

    CAP,CERAMIC,10NF,100VDC,10-% TOL,10+% TOL,X7R-TC CODE,-15,15%-TC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 12061C103KAT2A 21
    • 1 $0.0464
    • 10 $0.0464
    • 100 $0.0464
    • 1000 $0.0464
    • 10000 $0.0464
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    KYOCERA AVX 12061C103KAT2A

    Capacitors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian 12061C103KAT2A 30,231
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    12061C103KAT2A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12061C103KAT2A AVX Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance:+/- 10 %; Working Voltage, DC:100V; Dielectric Characteristic:X7R; Package/Case:1206; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes Original PDF
    12061C103KAT2A AVX X7R Dielectric Capacitor Original PDF
    12061C103KAT2A AVX Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Tantalum and Ceramic Chips Capacitors Scan PDF

    12061C103KAT2A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ELXY

    Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
    Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz


    Original     		NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, ELXY npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON PDF

    Untitled

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 PDF

    NPTB00025

    Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
    Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 NPTB00025B AC200BM-F2 AC200B JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		NPT2020 NPT2020 NDS-037 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023 PDF

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


    Original     		PDF

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package


    Original     		NPT2022 NPT2022 NDS-038 PDF

    smt a 472j

    Abstract: CR32-182J 12065C104KAT1A RM73B2BT103J 12062R104K9BB2 4P2T switch AD1885 application note MCR18EZHM FAIRCHILD SOT-223 MARK 46 4p2t
    Text: ADSP2192-12 EZ-KIT LITE  EVALUATION SYSTEM MANUAL Second Edition, August 2002 Part Number 82-000510-01 Analog Devices, Inc. Digital Signal Processing Division One Technology Way Norwood, MA 02062-9106 a Copyright Information 2000 – 2002 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be


    Original     		ADSP2192-12 smt a 472j CR32-182J 12065C104KAT1A RM73B2BT103J 12062R104K9BB2 4P2T switch AD1885 application note MCR18EZHM FAIRCHILD SOT-223 MARK 46 4p2t PDF

    power wizard 1.1 manual

    Abstract: 4p2t ADP3338AKC-2,5 12065C104KAT1A eg generalsemi red 5mm LED with holder RM73B2BT103J Yageo sk 85 220uf 74lvc14ad 3.5mm stereo headphone jack
    Text: ADSP2192-12 EZ-KIT LITE  EVALUATION SYSTEM MANUAL November 11, 2000 Part Number 82-000510-01 rev 1.0 Analog Devices, Inc. Digital Signal Processing Division One Technology Way Norwood, MA 02062-9106 a Copyright Information 2000 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in


    Original     		ADSP2192-12 power wizard 1.1 manual 4p2t ADP3338AKC-2,5 12065C104KAT1A eg generalsemi red 5mm LED with holder RM73B2BT103J Yageo sk 85 220uf 74lvc14ad 3.5mm stereo headphone jack PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		NPT2020 NPT2020 NDS-037 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		NPT2010 NPT2010 NDS-034 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		NPT35015 EAR99 NDS-005 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 PDF

    NPT25015

    Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
    Text: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015D JESD22-A114 JESD22-A115 APP-NPT25015-25 NPT25015DT PDF

    NPT35015

    Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
    Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power


    Original     		NPT35015 6000MHz EAR99 NDS-005 NPT35015D r04350 12061C103KAT2A JESD22-A114 JESD22-A115 j146 NPT35015DT PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 PDF

    12062C103KAT2A

    Abstract: 06035G104ZAT2A 1812HC102KAT1A 70001410 12065C224KAT 06035C333KAT2A 04025A180JAT2A 06031A221JAT2A 0402YC223KAT2A 12065C104JAT
    Text: 1764-2012:QuarkCatalogTempNew 9/11/12 10:47 AM Page 1764 TEST & MEASUREMENT 21 Ceramic Chip Capacitors RoHS Multilayer ceramic capacitors are available in both Class I and Class II formulations. Temperature compensating formulations are Class I and temperature stable and


    Original     		pF-22 12061A470JAT2A 06031A560JAT2A 08051A560JAT2A 08051A680JAT2A 06031A820JAT2A 06031A101FAT2A 06031A101JAT2A 06031A101KAT2A 08051A10102 12062C103KAT2A 06035G104ZAT2A 1812HC102KAT1A 70001410 12065C224KAT 06035C333KAT2A 04025A180JAT2A 06031A221JAT2A 0402YC223KAT2A 12065C104JAT PDF

    taja105k020r

    Abstract: 213-1131 TAJB475K016R TAJA156K006R TAJD106K025R TAJC335K025R TAJC226K010R TAJD106K035R TAJC476K010R TAJC106K020R
    Text: AVX Tantalum and Ceramic Chips Capacitors Visit AVXÕs Website at www.avxcorp.com TAJ Series Standard Solid Tantalum Chip Capacitors c c c c c c Case Dimensions Ñ mm In. Capacitance Tolerance: ±10% Capacitance Range: 0.1 µF to 330 µF Available in Standard and Extended Ranges


    Original     		06035A180JAT2A 04025C561KAT2A 06035A220JAT2A 04025C102KAT2A 06035A330JAT2A 04025C222KAT2A 06035A390JAT2A 06035C151JAT2A 06035A470JAT2A 06035C181JAT2A taja105k020r 213-1131 TAJB475K016R TAJA156K006R TAJD106K025R TAJC335K025R TAJC226K010R TAJD106K035R TAJC476K010R TAJC106K020R PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		NPT2020 NPT2020 NDS-037 PDF

    NPT25015DT

    Abstract: NPT25015DR
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015DT NPT25015DR PDF