NPTB00025
Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz
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Original
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PDF
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NPTB00025
4000MHz
500-1000MHz
EAR99
225mA,
3000MHz,
NDS-006
NPTB00025B
AC200BM-F2
AC200B
JESD22-A114
JESD22-A115
UPW1C151MED
ATC600F1R2AT
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Untitled
Abstract: No abstract text available
Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz
|
Original
|
PDF
|
NPTB00025
4000MHz
500-1000MHz
EAR99
225mA,
3000MHz,
NDS-006
|
Untitled
Abstract: No abstract text available
Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz
|
Original
|
PDF
|
NPTB00025
4000MHz
500-1000MHz
EAR99
225mA,
3000MHz,
NDS-006
|