NPT25015
Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
Text: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP
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Original
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PDF
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NPT25015
2500-2700MHz
EAR99
200mA,
2500MHz,
NDS-004
NPT25015D
JESD22-A114
JESD22-A115
APP-NPT25015-25
NPT25015DT
|
Untitled
Abstract: No abstract text available
Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP
|
Original
|
PDF
|
NPT25015
2500-2700MHz
EAR99
200mA,
2500MHz,
NDS-004
|
NPT25015DT
Abstract: NPT25015DR
Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP
|
Original
|
PDF
|
NPT25015
2500-2700MHz
EAR99
200mA,
2500MHz,
NDS-004
NPT25015DT
NPT25015DR
|