NPT1012 Search Results

NPT1012 Price and Stock

Filter by Manufacturer


MACOM NPT1012B RF MOSFET HEMT 28V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NPT1012B	Tray			30	1 - 10 - 100 $156.78732 1000 $156.78732 10000 $156.78732	Buy Now
Mouser Electronics	NPT1012B					1 $179.88 10 $168.48 100 $164.97 1000 $164.97 10000 $164.97	Get Quote
Richardson RFPD	NPT1012B				30	1 - 10 - 100 $150.52 1000 $150.52 10000 $150.52	Buy Now
Friedrich Lütze GmbH LMNPT1012 Metal Locknut; NPT Thread; NPT 1 "; Brass-Nickel Plated \| LUTZE Inc. LMNPT1012
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LMNPT1012	Bulk			1	1 $17.66 10 $16.78 100 $16.43 1000 $16.43 10000 $16.43	Get Quote

NPT1012 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NPT1012B		M/A-Com	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 25W DC-4000MHZ		Original	PDF

NPT1012 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NPT1012 Abstract: NPT1012B AC200BM-F2 AC200B Text: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in	Original	PDF	NPT1012 DC-4000MHz 3000MHz 0-25W 1000-2500MHz 2-20W 30-1000MHz EAR99 3000MHz) 225mA, NPT1012B AC200BM-F2 AC200B
Untitled Abstract: No abstract text available Text: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in	Original	PDF	NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA,
Untitled Abstract: No abstract text available Text: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in	Original	PDF	NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA,
NPTB00004 Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100 Text: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for	Original	PDF	NPTB00004 PO150S NPT25015 NPT35015 NPT1012 2xNPT25100 NPTB00004 NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
Avago 9886 Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8	Original	PDF	com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
NPTB00004 Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate Text: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.	Original	PDF	NPTB00004 PO150S NPT25015 NPTB00004 NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate