Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN TRANSISTOR 1.5A 600V Search Results

    NPN TRANSISTOR 1.5A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 1.5A 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor 600V

    Abstract: NPN Transistor 1.5A 600V NPN 600V transistor BUX48B transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V NPN 1.5A 1200V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX48B DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 600V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from


    Original     		PDF BUX48B NPN Transistor 600V NPN Transistor 1.5A 600V NPN 600V transistor BUX48B transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V NPN 1.5A 1200V

    transistor npn high speed switching 5A 600v

    Abstract: NPN Transistor 1.5A 600V BUV70 NPN Transistor 600V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV70 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed APPLICATIONS ·Designed for motor controls, switching mode power


    Original     		PDF BUV70 14aturation transistor npn high speed switching 5A 600v NPN Transistor 1.5A 600V BUV70 NPN Transistor 600V

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-F-K 13003DHL-x-T92-A-B 13003DHL-x-Tat QW-R223-011

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-K QW-R223-011

    Untitled

    Abstract: No abstract text available
    Text: NTE2676 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2676 100mA, 75kHz

    act30bht

    Abstract: 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht ACT30 flyback 13003 act30bh act30 application
    Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation


    Original     		PDF ACT30 65kHz 100kHz ACT30 man50 act30bht 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht flyback 13003 act30bh act30 application

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    act30bht

    Abstract: 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003
    Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation


    Original     		PDF ACT30 65kHz 100kHz ACT30 act30bht 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original     		PDF CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams

    PHE13002AU

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.


    Original     		PDF PHE13002AU OT533 PHE13002AU

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    PC 13003 TRANSISTOR

    Abstract: PC 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR 13002 13003 transistor 13003 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR npn
    Text: MJE13002 NPN MJE13003 (NPN) SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating 13002 Collector-base voltage Vcb 600 Collector-emitter voltage Vceo 300 Emitter-base voltage Veb 9 Collector current (DC) Ic 1.5 Collector current (Pulse)


    Original     		PDF MJE13002 MJE13003 O-126 PC 13003 TRANSISTOR PC 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR 13002 13003 transistor 13003 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR npn

    CDT13003

    Abstract: cdt 13003 SR 13003 b SR 13003 x 13003 TRANSISTOR PIN DETAILS 13003 TRANSISTOR npn SR 13003 K X 13003 E 13003 TRANSISTOR 13003 A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original     		PDF CDT13003 O-220 C-120 CDT13003Rev 230306D CDT13003 cdt 13003 SR 13003 b SR 13003 x 13003 TRANSISTOR PIN DETAILS 13003 TRANSISTOR npn SR 13003 K X 13003 E 13003 TRANSISTOR 13003 A

    230V ac to 5V dc usb charger circuit

    Abstract: D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer
    Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT36X, ACT33X Rev 2.5 Oct 2012 www.active-semi.com ActivePSR TM High Efficiency AC/DC Primary Switching Solutions Application Change Note Revision History Page 12~13 2012-Oct– 19 Rev 2.5


    Original     		PDF ACT36X, ACT33X 2012-Octâ ACT365-02 EPC17) 85-264Vac 2200mA 230V ac to 5V dc usb charger circuit D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    NPN Transistor 1.5A 600V

    Abstract: transistor 4001 BUL49A
    Text: BUL49A MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 40.01 1.575 Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038)


    Original     		PDF BUL49A 10MHz 300ms NPN Transistor 1.5A 600V transistor 4001 BUL49A

    EN5817

    Abstract: TA-1043 2SC5417 58173
    Text: Ordering number : EN5817 NPN Triple Diffused Planar Silicon Transistor 2SC5417 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage. • High reliability Adoption of HVP process . • Adoption of MBIT process. unit: mm 2079B-TO220FI (LS)


    Original     		PDF EN5817 2SC5417 2079B-TO220FI 2SC5417] EN5817 TA-1043 2SC5417 58173

    J9100

    Abstract: No abstract text available
    Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit


    Original     		PDF FJP9100 O-220 FJP9100 O-220-3 FJP9100TU J9100

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    TRANSISTOR J 5804 NPN

    Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
    Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV


    OCR Scan     		PDF 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, 1N5767 1N5802 1N5802, 1N5804, TRANSISTOR J 5804 NPN TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680