Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NE021 Search Results

    SF Impression Pixel

    NE021 Price and Stock

    KEMET Corporation T520B227M2R5ANE021

    Tantalum Capacitors - Polymer 2.5V 220uF 1311 20% ESR=21mOhms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics T520B227M2R5ANE021
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.605
    		Get Quote

    Seiko NPC Corporation POLYSTYRENE-.02-160V-2.5%

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics POLYSTYRENE-.02-160V-2.5% 2,000 3
    • 1 -
    • 10 $1.875
    • 100 $0.7031
    • 1000 $0.4875
    • 10000 $0.4875
    		Buy Now

    NEC Electronics Group NE02135

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NE02135 101
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    NEC Electronics Group NE02107

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NE02107 8
    • 1 $405.8625
    • 10 $371.0742
    • 100 $371.0742
    • 1000 $371.0742
    • 10000 $371.0742
    		Buy Now

    NEC Electronics Group NE02100-DIE

    Our Stock
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Velocity Electronics NE02100-DIE 274
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    NE021 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE021 Unknown NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE021 NEC NPN Silicon Frequency Transistor Scan PDF
    NE02100 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE02100 NEC NPN silicon high frequency transistor. Original PDF
    NE02100 NEC 4.5 GHz, 25 V, NPN silicon high frequency transistor Scan PDF
    NE021020-12 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE021020-28 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE02103 Advanced Semiconductor Transistor Original PDF
    NE02103 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE02103 NEC 4.5 GHz, 25 V, NPN silicon high frequency transistor Scan PDF
    NE02107 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE02107 NEC NPN silicon high frequency transistor. Original PDF
    NE02107 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE02107 NEC 4.5 GHz, 25 V, NPN silicon high frequency transistor Scan PDF
    NE02107-AZ NEC TRANS GP BJT NPN 12V 0.07A Original PDF
    NE02107B NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE02107B NEC NPN silicon high frequency transistor. Original PDF
    NE02107B NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Scan PDF
    NE02107B-AZ NEC TRANS GP BJT NPN 12V 0.07A Original PDF
    NE02107E NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Scan PDF

    NE021 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE97833 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz


    Original     		PDF NE97833 NE02133 NE97833 2SA1978 NE97833-T1B-A 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: NE02135 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI NE02135 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. PACKAGE STYLE .085 4LPILL Dimensions are: in mm FEATURES INCLUDE: • High insertion gain. • High power gain. • Low Noise figure


    Original     		PDF NE02135 NE02135

    8F157

    Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


    Original     		PDF NE021 NE02135 NE02139 07/07B NE02133" NE02133 8F1573FD7D76BE9F795396E6F54D44. 30-Sep-2010 8F157 relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D

    c3355

    Abstract: c2570 transistor C2570 transistor c3355 C3355 schematic NE02132 C3544 C-2570 NE85632 marking 14
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 32 YEAR INDICATOR f 5.2 MAX MONTH INDICATOR 5.5 MAX MARKING INTERNAL CODE 14.0 MIN f 0.5 2.54 1.27 1.77 MAX B E C PART NUMBER NE02132


    Original     		PDF NE02132 NE85632 NE94432 C2570 C3355 C3544 24-Hour c3355 c2570 transistor C2570 transistor c3355 C3355 schematic NE02132 C3544 C-2570 NE85632 marking 14

    NE85630

    Abstract: T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 30 2.1 ± 0.2 1.25 ± 0.1 0.65 2.0 ± 0.2 2 1.3 3 1 +0.1 0.3 -0.05 ALL LEADS MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER NE02130B NE02130


    Original     		PDF NE02130B NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NE94430 NE85630 T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630

    ne02103

    Abstract: S212F amplifier TRANSISTOR 12 GHZ
    Text: NE02103 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI NE02103 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. PACKAGE STYLE .100 4LPILL FEATURES INCLUDE: • High insertion gain, 18.5 dB at 500 MHz. • High power gain, 1.5 dB at 500 MHz.


    Original     		PDF NE02103 NE02103 VCE25 S212F amplifier TRANSISTOR 12 GHZ

    Micro-X Marking 865

    Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F

    NE46734

    Abstract: NE46134 NE681 NE685 1817 transistor NE680 ne85634 NE021 NE734 NE856
    Text: Small Signal Bipolar Transistor Performance Guide Optimum Noise Figure, NFOPT dB NE734 NE856 NE685 NE021 NE734 NE685 NE681 NE021 NE681 NE856 NE680 3.0 NE680 2.0 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10.0 Gain at Optimum Noise Figure, GA (dB) 4.0 Output Power, POUT (dBm) & Gain GA (dB)


    Original     		PDF NE734 NE856 NE685 NE021 NE681 NE46734 NE46134 NE681 NE685 1817 transistor NE680 ne85634 NE021 NE734 NE856

    NE02135

    Abstract: NE68035 NE68135 NE85635 NE21935 marking 34 NE856 45 marking NE85635/CEL NE85635 packaging schematic
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 35 2 3.8 MIN ALL LEADS 0.5±0.06 3 1 A X 45˚ MARKING 4 LOT CODE 2.55±0.2 +0.06 0.1 -0.04 f 2.1 1.8 MAX 0.55 PART NUMBER NE02135 NE21935


    Original     		PDF NE02135 NE21935 NE68035 NE68135 NE85635 24-Hour NE02135 NE68035 NE68135 NE85635 NE21935 marking 34 NE856 45 marking NE85635/CEL NE85635 packaging schematic

    s-parameter s11 s12 s21

    Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


    Original     		PDF NE021 NE02135 NE02139 NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02139-T1 s-parameter s11 s12 s21 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431

    NE02135

    Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR

    2SA1978

    Abstract: NE02133 NE97833 NE97833-T1B-A S21E
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97833 NE02133 NE97833 2SA1978 2SA1978 NE02133 NE97833-T1B-A S21E

    NE021 microwave oscillator

    Abstract: 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE021 NE02107 OT-23) 34-6393/FAX NE021 microwave oscillator 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225

    NE02107

    Abstract: 2SC2149 2SC2351 NE021 NE02100 NE02133 NE02135 NE02139 18752 60S12
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 07/07B NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 NE02107 2SC2149 2SC2351 NE02100 NE02133 NE02135 NE02139 18752 60S12

    NE02135

    Abstract: 10 ghz transistor TRANSISTOR 12 GHZ TRANSISTOR 200 GHZ amplifier TRANSISTOR 12 GHZ
    Text: NE02135 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI NE02135 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. PACKAGE STYLE .100 4LPILL FEATURES INCLUDE: • High insertion gain. • High power gain. • Low Noise figure MAXIMUM RATINGS


    Original     		PDF NE02135 NE02135 10 ghz transistor TRANSISTOR 12 GHZ TRANSISTOR 200 GHZ amplifier TRANSISTOR 12 GHZ

    221-166

    Abstract: 2SA1978 transistor marking T93 NE02133 NE97833 S21E ne02133 MARKING
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97833 NE02133 NE97833 2SA1978 24-Hour 221-166 2SA1978 transistor marking T93 NE02133 S21E ne02133 MARKING

    2SC2570

    Abstract: 2sc2570 transistor NE02132
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,


    OCR Scan     		PDF NE021 NE02107 PACKAGEOUTUNE33 OT-23) b427525 00b5b07 2SC2570 2sc2570 transistor NE02132

    NE02136

    Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
    Text: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF b427414 000137S NE021 3l-17 NE02136 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package

    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135

    JF11

    Abstract: NE02133-T1B
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression


    OCR Scan     		PDF NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11

    SAA 1006

    Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression


    OCR Scan     		PDF NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K

    NE021 microwave oscillator

    Abstract: 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION_


    OCR Scan     		PDF NE021 NE02107 OT-23) 6393/FAX NE021 microwave oscillator 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec

    2sc2570 transistor

    Abstract: t0-t01 2sc2570 NE02132
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 1 8 .5 d B at 5 0 0 M H z • LOW NOISE FIGURE: 1 .5 dB a t 5 0 0 M H z • HIGH POWER GAIN: 12 d B at 2 G H z • LARGE DYNAMIC RANGE: 19 d B m at 1 dB ,


    OCR Scan     		PDF NE021 OT-23) 2sc2570 transistor t0-t01 2sc2570 NE02132

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: It = 5.5 GHz TYP • HIGH SPEED SW ITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|Z = 10 dB at1 GHz


    OCR Scan     		PDF NE02133 NE97833 NE97833 2SA1978 NE97833-T1 24-Hour