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    BM27414 Search Results

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    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135

    NE050290-07

    Abstract: ne050391-12 DDD2224 NE050220-07 NE050291-07 NE050490-07 NE050491-07 NE050690-07 NE050691-07 NEM054029-12
    Text: E C/ CALIFORNIA 47E » • bM27414 DDDE224 blT « N E C C UHF DEVICES: 450 MHz TO 700 MHz PART NUMBER PACKAGE STYLE FREQUENCY SUPPLY CLASS RANGE OF VOLT. GHz OPER. (V) TYP. TYP. P out P out (dBm) (W) 38.6 7.2 8.6 70.0 .500 NO 38.5 7.1 4.0 80.0 .500 NO 38.5


    OCR Scan     		PDF bM27414 DDD2224 NE050725-10 NE050691-07 NE050690-07 NE050490-07 NE050491-07 NE050291-07 NE050290-07 NE052025-28 ne050391-12 NE050220-07 NEM054029-12

    of all 74 ic series

    Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
    Text: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S


    OCR Scan     		PDF Q0QES43 NEL080120-28 NEL080220-28 NEL080525-28 NEL0801 NEL0802 NEL0805: NEL0800 to1000 bMS74m of all 74 ic series 2SC3140 2SC3139 NEL080525-28 J279 J430 j6925

    2SK571

    Abstract: ne72089 ne72084 NE72000 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE720 NE7200
    Text: NEC/ bM274m SbE D CALIFORNIA NEC OQOaa^D 3*^7 BINEC C T - 3 ,\- z £ GENERAL PURPOSE G aAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LO W C O S T Units in mm NE72000 (CHIP) (Units In pm) • LO W N O IS E PIQURE 100- • 0.8 dB at 4 GHz 1.7 dB at 8 GHz


    OCR Scan     		PDF bM274m 0Q022TD NE720 NE72000) NE72084 NE72089A) NE72000 2SK571 ne72089 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE7200

    NE24600

    Abstract: NE24620 2SC2952 2SC2953 NE24615
    Text: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :


    OCR Scan     		PDF tj4S74m 00G237S NE24600 NE24615 NE24620 NE24620 NE246 preve35 2SC2952 2SC2953

    NE64800

    Abstract: No abstract text available
    Text: NEC/ CALIFORNIA NEC SbE D b4S74m 0D02433 4^3 K-BAND BIPOLAR OSCILLATOR TRANSISTOR • NE64800 OUTLINE DIMENSIONS FEATURES NECC Units in jjm NE64800 (CHIP) • FUNDAMENTAL OSCILLATIO N GREATER THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER M IL-SPEC TEMP RANGES


    OCR Scan     		PDF b4S74m 0D02433 NE64800 NE64800