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    NE685 Search Results

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    NE685 Price and Stock

    California Eastern Laboratories (CEL) NE68518-T1-A

    RF TRANS NPN 6V 12GHZ SOT343
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    DigiKey NE68518-T1-A Reel 6,000 3,000
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    California Eastern Laboratories (CEL) NE68519-T1-A

    SAME AS 2SC5010 NPN SILICON AMPL
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    DigiKey NE68519-T1-A Reel 3,000 3,000
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    NE68519-T1-A Digi-Reel 1
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    Quest Components NE68519-T1-A 1,144
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    California Eastern Laboratories (CEL) NE68539-A

    RF TRANS NPN 6V 12GHZ SOT143
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    California Eastern Laboratories (CEL) NE68519-A

    RF TRANS NPN 6V 12GHZ SOT523
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    California Eastern Laboratories (CEL) NE68530-T1

    RF TRANS NPN 6V 12GHZ SOT323
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    Find more NE685 price and stock on Findchips.com

    NE685 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE685 NEC Original PDF
    NE68518 NEC Semiconductor Selection Guide Original PDF
    NE68518 NEC NPN silicon high frequency transistor. Original PDF
    NE68518-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original PDF
    NE68518-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68518-T1 NEC Original PDF
    NE68518-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original PDF
    NE68518-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68519 NEC Semiconductor Selection Guide Original PDF
    NE68519 NEC NPN silicon high frequency transistor. Original PDF
    NE68519-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ MINIMOLD Original PDF
    NE68519-T1 NEC Original PDF
    NE68519-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SMD Original PDF
    NE68519-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68530 NEC Semiconductor Selection Guide Original PDF
    NE68530 NEC NPN silicon high frequency transistor. Original PDF
    NE68530-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-323 Original PDF
    NE68530-T1 NEC Original PDF
    NE68530-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-323 Original PDF
    NE68530-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    NE685 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0066E

    Abstract: 014e1
    Text: NONLINEAR MODEL NE68518 SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 Parameter time capacitance inductance resistance


    Original     		PDF NE68518 7e-16 9e-13 4e-12 18e-12 2e-12 NE68518 13e-12 14e-12 0066E 014e1

    Untitled

    Abstract: No abstract text available
    Text: NE68530 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC UNITS Parameter Units time seconds capacitance farads henries


    Original     		PDF NE68530 7e-16 9e-13 40e-12 18e-12 2e-12 13e-12 14e-12 41e-9

    NE685

    Abstract: No abstract text available
    Text: NONLINEAR MODEL UPA862TD BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 NE685 Q2 NE851 Parameters Q1 NE685 Q2 NE851 IS 7.0e-16 137e-18 MJC 0.34 0.14 BF 109 166 XCJC 0.5 0.5 NF 1 0.9871 CJS VAF 15 20.4 VJS 0.75 0.75 IKF 0.19 50 MJS ISE 7.90e-13 80.4e-15 FC


    Original     		PDF UPA862TD 6e-12 855e-12 2e-12 73e-9 NE685 0e-16 90e-13 4e-12 18e-12

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE685M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 time seconds IS 8.98e-17 MJC 0.19 capacitance farads BF 107.1 XCJC inductance


    Original     		PDF NE685M03 98e-17 02e-3 50e-12 11e-12 4e-12 13e-12 14e-12 08eries

    cce 7100

    Abstract: transistor d 13009 br 8764 NE685 cce 7100 1027 NE68530 NE68533 2SC4959 2SC5010 NE68518
    Text: NE685 SERIES NEC'S SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ


    Original     		PDF NE685 cce 7100 transistor d 13009 br 8764 NE685 cce 7100 1027 NE68530 NE68533 2SC4959 2SC5010 NE68518

    transistor K 2937

    Abstract: TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor
    Text: SILICON TRANSISTOR UPA806T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz


    Original     		PDF NE685 UPA806T UPA806T 24-Hour transistor K 2937 TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor

    cce 7100

    Abstract: 85500 transistor br 8764 cce 7100 0913 transistor d 13009 BF109 NE685 539r P 13009 0803 2SC4959
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE


    Original     		PDF NE685 cce 7100 85500 transistor br 8764 cce 7100 0913 transistor d 13009 BF109 NE685 539r P 13009 0803 2SC4959

    UPA826TC-T1

    Abstract: BF109 NE685 S21E UPA826TC vaf meter
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA826TC contains two NE685 NPN high frequency


    Original     		PDF UPA826TC OT-363 UPA826TC NE685 UPA826TC-T1 BF109 S21E vaf meter

    NE685M33

    Abstract: NE685M33-T3
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION


    Original     		PDF NE685M33 NE685M33-T3 NE685M33 NE685M33-T3

    BF 6591

    Abstract: nec 7915 2SC5617 transistor on 4409 NEC 9714 RF NPN POWER TRANSISTOR C 10-12 GHZ NE685 NE685M13 NE685M13-T3 S21E
    Text: NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.35 • 1.0+0.1 ñ0.05 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz 0.7±0.05


    Original     		PDF NE685M13 NE685M13 BF 6591 nec 7915 2SC5617 transistor on 4409 NEC 9714 RF NPN POWER TRANSISTOR C 10-12 GHZ NE685 NE685M13-T3 S21E

    Untitled

    Abstract: No abstract text available
    Text: NE685M13 NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters SCHEMATIC Q1 Q1 CCBPKG IS 7e-16 MJC 0.34 BF 109 XCJC 0.7 NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC 0.5 NE 2.19 TF 2.5e-12 BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4


    Original     		PDF 7e-16 9e-13 4e-12 18e-12 NE685M13 5e-12 1e-12 14e-12 35e-9 05e-12

    TRANSISTOR C 6090 npn

    Abstract: TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 NE685 S21E
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 12 GHz


    Original     		PDF UPA806T NE685 UPA806T 24-Hour TRANSISTOR C 6090 npn TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 S21E

    2SC5617

    Abstract: NE685M13 NE685 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –


    Original     		PDF NE685M13 NE685M13 24-Hour 2SC5617 NE685 S21E

    cce 7100

    Abstract: 85500 transistor br 8764 NE685 NE68530 cce 7100 1053 BJT BF 167 BJT IC Vce 2SC4959 2SC5010
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE


    Original     		PDF NE685 NE685 NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour cce 7100 85500 transistor br 8764 NE68530 cce 7100 1053 BJT BF 167 BJT IC Vce 2SC4959 2SC5010

    NE685M33-T3-A

    Abstract: NE685M33 NE685M33-A
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION


    Original     		PDF NE685M33 NE685M33-A NE685M33-T3-A NE685M33-T3-A NE685M33 NE685M33-A

    cce 7100

    Abstract: 85500 transistor 2SC4955 NE68519-T1 2SC4959 2SC5010 2SC5015 NE685 NE68518 NE68519
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE


    Original     		PDF NE685 NE685 NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour cce 7100 85500 transistor 2SC4955 NE68519-T1 2SC4959 2SC5010 2SC5015 NE68518 NE68519

    NE46734

    Abstract: NE46134 NE681 NE685 1817 transistor NE680 ne85634 NE021 NE734 NE856
    Text: Small Signal Bipolar Transistor Performance Guide Optimum Noise Figure, NFOPT dB NE734 NE856 NE685 NE021 NE734 NE685 NE681 NE021 NE681 NE856 NE680 3.0 NE680 2.0 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10.0 Gain at Optimum Noise Figure, GA (dB) 4.0 Output Power, POUT (dBm) & Gain GA (dB)


    Original     		PDF NE734 NE856 NE685 NE021 NE681 NE46734 NE46134 NE681 NE685 1817 transistor NE680 ne85634 NE021 NE734 NE856

    transistor bf 458

    Abstract: NE685 S21E UPA806T UPA806T-T1
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1


    Original     		PDF UPA806T NE685 UPA806T 24-Hour transistor bf 458 S21E UPA806T-T1

    BF 6591

    Abstract: transistor on 4409 2SC5617 NE685 NE685M13 NE685M13-T3-A S21E NEC JAPAN 7915 nec 7915 6004 0215
    Text: NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.35 • 1.0+0.1 ñ0.05 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz


    Original     		PDF NE685M13 NE685M13 BF 6591 transistor on 4409 2SC5617 NE685 NE685M13-T3-A S21E NEC JAPAN 7915 nec 7915 6004 0215

    transistor bf 458

    Abstract: Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UpA8 6T OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: P A C K A G E OUTLINE S06 (Top View) 2 NE685 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21EI2 = 8.5 dB TYP at 2 GHz


    OCR Scan     		PDF NE685 IS21EI2 UPA806T 4e-12 18e-12 2e-12 UPA806T transistor bf 458 Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3

    HE 85500

    Abstract: st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 fr 3709 z E 13009 L
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES_ • LOW CO ST • SM A LL AND ULTRA SM ALL SIZE PACKAGES • LOW VO LTA G E/LO W CU R R EN T OPERATION • HIGH GAIN BANDW IDTH PRODUCT: fT o f 12 GHz • NO ISE FIG UR ES O F 1.5 dB AT 2.0 GHZ


    OCR Scan     		PDF NE685 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 HE 85500 st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 fr 3709 z E 13009 L

    014e1

    Abstract: cce 7100 transistor d 13009 br 8764 CD 5888 cb ic CD 5888 CB bf 0252 ha 14052 transistor j 13009 NE68530
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES_ • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES ♦ • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fr of 1 2 GHz • NOISE FIGURES OF 1.5 dB AT ZQ GHZ


    OCR Scan     		PDF NE685 NE68518-T1 NE68519-T1 E68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour 014e1 cce 7100 transistor d 13009 br 8764 CD 5888 cb ic CD 5888 CB bf 0252 ha 14052 transistor j 13009 NE68530

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M03 NEW M03 PACKAGE: • S m allest tra n sisto r o u tlin e pa ckag e ava ila ble • Low pro file /0 .5 9 mm package height • Flat lead style fo r be tte r RF p e rfo rm an ce


    OCR Scan     		PDF NE685M03 14e-12 08e-12 12e-9 10e-9 12e-9 24-Hour

    85500 transistor

    Abstract: st 85500 LM 7209 transistor d 13009 P 13009 0803 P 13009 0708 0384 80700 L 8629 lm 7803
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW C O ST • S M A LL AND U L T R A S M A LL S IZ E P A C K A G E S • LOW V O LTA G E/LO W C U R R E N T O PER A TIO N • HIGH GAIN BANDW IDTH P R O D U C T : fTof 12 GHz . N O ISE F IG U R E S O F 1.5 d B A T 2.0 GHZ


    OCR Scan     		PDF NE685 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 85500 transistor st 85500 LM 7209 transistor d 13009 P 13009 0803 P 13009 0708 0384 80700 L 8629 lm 7803