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    0DDB354 Search Results

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    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


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    PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135

    MN41256-12

    Abstract: MN41256-15 MN41256 41256-15 IR511 SFE 10.7 MX MN4125 FA-135
    Text: P ANA SO NIC 6932852 IN DL/ELEK P A NA S ON I C -CIO 72 Î ËJ 1,^32852 0G[lb353 □ J ~ IND L.ELECTRON IC" . 72C 06353 t D 7 - 'fi- 2 î- tS' M M N 4 1 256-12, MN41256-15 MN41 256-1 2 , MN41 256-1 5 262,144 tr-y h N M O S ¥ < t S ' y # R A M 2 6 2 ,1 4 4 -B it N M O S Dynamic RAM


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    PDF MN41256-12, MN41256-15 144-Bit MN41256 MN41256 144-word 16-lead 300mil MN41256-12 MN41256-15 41256-15 IR511 SFE 10.7 MX MN4125 FA-135