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    MTP6N60 Search Results

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    MTP6N60 Price and Stock

    Motorola Semiconductor Products MTP6N60E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MTP6N60E 16
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    STMicroelectronics MTP6N60

    MOSFET Transistor, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MTP6N60 3,298
    • 1 $5.4
    • 10 $5.4
    • 100 $5.4
    • 1000 $1.98
    • 10000 $1.89
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    MTP6N60 20
    • 1 $4.65
    • 10 $3.41
    • 100 $3.41
    • 1000 $3.41
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    MTP6N60 172
    • 1 $6.81
    • 10 $6.81
    • 100 $3.178
    • 1000 $2.951
    • 10000 $2.951
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    MTP6N60 43
    • 1 $5.4
    • 10 $3.96
    • 100 $3.6
    • 1000 $3.6
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    SGS Thomson MTP6N60

    MOSFET Transistor, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MTP6N60 2,790
    • 1 $5.4
    • 10 $5.4
    • 100 $5.4
    • 1000 $1.98
    • 10000 $1.89
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    MTP6N60 880
    • 1 $5.4
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    • 100 $5.4
    • 1000 $2.7
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    MTP6N60 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MTP6N60 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    MTP6N60 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    MTP6N60 Motorola Switchmode Datasheet Scan PDF
    MTP6N60 Motorola European Master Selection Guide 1986 Scan PDF
    MTP6N60 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP6N60 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MTP6N60E Motorola TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 ? Original PDF
    MTP6N60E On Semiconductor TMOS E-FET Power Field Effect Transistor Original PDF
    MTP6N60E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP6N60E Unknown FET Data Book Scan PDF
    MTP6N60E On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 600V, 3A, Pkg Style TO220AB Scan PDF
    MTP6N60E/D On Semiconductor TMOS POWER FET 6.0 AMPERES 600 VOLTS Original PDF
    MTP6N60E/D On Semiconductor TMOS POWER FET 6.0 AMPERES 600 VOLTS Original PDF
    MTP6N60E-D On Semiconductor TMOS E-FET Power Field Effect Transistor N-Channel Original PDF

    MTP6N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP6N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP6N60 O-220

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP6N60E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP6N60E O-220AB

    MTP6N6

    Abstract: No abstract text available
    Text: MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced MOSFET is


    Original     		PDF MTP6N60E MTP6N60E/D MTP6N6

    motorola mosfet MTP6N60E

    Abstract: MTP6N60E MTP6N6 AN569
    Text: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 600 VOLTS


    Original     		PDF MTP6N60E/D MTP6N60E motorola mosfet MTP6N60E MTP6N60E MTP6N6 AN569

    MTP6N60

    Abstract: No abstract text available
    Text: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF MTP6N60 100oC O-220 MTP6N60

    Untitled

    Abstract: No abstract text available
    Text: Cx / i, LJ nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP6N60 N-Channel Mosfet Transistor FEATURES • Drain Current -ID= 6A@ TC=25°C • Drain Source Voltage1 0(2) •, ^f£\ /-s, : VDSs= 600V(Min)


    Original     		PDF MTP6N60 O-220C

    MTP6N6

    Abstract: MTP6N60
    Text: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF MTP6N60 100oC O-220 MTP6N6 MTP6N60

    MTP6N6

    Abstract: MTP6N60E equivalent MTP6N60E AN569 mtp6n mosfet transistor 400 volts.100 amperes
    Text: TMOS E-FET. Power Field Effect Transistor MTP6N60E ON Semiconductor Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading


    Original     		PDF MTP6N60E r14525 MTP6N60E/D MTP6N6 MTP6N60E equivalent MTP6N60E AN569 mtp6n mosfet transistor 400 volts.100 amperes

    MTP6N60E equivalent

    Abstract: MTP6N60E/D equivalent MTP6N60E motorola mosfet MTP6N60E AN569
    Text: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    Original     		PDF MTP6N60E/D MTP6N60E MTP6N60E equivalent MTP6N60E/D equivalent MTP6N60E motorola mosfet MTP6N60E AN569

    MTP6N60

    Abstract: MTP6N6 12 v smps
    Text: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF MTP6N60 100oC O-220 MTP6N60 MTP6N6 12 v smps

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    MC44603AP

    Abstract: motorola mosfet MTP6N60E 1N4007 1N4148 1N4934 1N5819 MC44603A MC44603ADW MR856 TL431
    Text: Order this document by MC44603A/D MC44603A Enhanced Mixed Frequency Mode GreenLine PWM Controller: Fixed Frequency, Variable Frequency, Standby Mode The MC44603A is an enhanced high performance controller that is specifically designed for off–line and dc–to–dc converter applications. This


    Original     		PDF MC44603A/D MC44603A MC44603A MC44603AP motorola mosfet MTP6N60E 1N4007 1N4148 1N4934 1N5819 MC44603ADW MR856 TL431

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC44603/D MC44603 Advance Information Mixed Frequency Mode GreenLine PWM Controller: Fixed Frequency, Variable Frequency, Standby Mode The MC44603 is an enhanced high performance controller that is specifically designed for off–line and dc–to–dc converter applications. This


    Original     		PDF MC44603/D MC44603 MC44603 MC44603/D*

    1N4007 diode PIV rating

    Abstract: NPC1200 AND8023 NCP1200 CROSS REFERENCE NPC-1200 NPC1200 equivalent footprint for transformer in orcad trouble shorting top switch 250 smps MBRA140LT3 EGSTON C 44
    Text: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor Avenue Eisenhower, BP1056, 31023 TOULOUSE Cedex France 33 0 5 61 19 90 12 e–mail: christophe.basso@onsemi.com The NCP1200 implements a standard current mode


    Original     		PDF AND8023/D NCP1200 BP1056, NCP1200 r14525 1N4007 diode PIV rating NPC1200 AND8023 NCP1200 CROSS REFERENCE NPC-1200 NPC1200 equivalent footprint for transformer in orcad trouble shorting top switch 250 smps MBRA140LT3 EGSTON C 44

    VOGT P4

    Abstract: Self-Oscillating Flyback mosfet irf*6n60 orega flyback transformers resonant power supply VOGT TRANSFORMER P3 vogt b3 transformer vogt transformer VOGT P3 orega flyback transformer
    Text: AND8145/D A 75 W TV Power Supply Operating in Quasi−square Wave Resonant Mode using the NCP1207 Controller http://onsemi.com Prepared by: Nicolas Cyr ON Semiconductor APPLICATION NOTE Introduction Quasi−square wave resonant converters, also known as quasi−resonant QR converters, allow designing flyback


    Original     		PDF AND8145/D NCP1207 VOGT P4 Self-Oscillating Flyback mosfet irf*6n60 orega flyback transformers resonant power supply VOGT TRANSFORMER P3 vogt b3 transformer vogt transformer VOGT P3 orega flyback transformer

    NPC-1200

    Abstract: 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad
    Text: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE S External MOSFET connection: by leaving the external MOSFET external to the IC, you can select avalanche proof devices which, in certain cases e.g. low output


    Original     		PDF AND8023/D NCP1200 r14525 NPC-1200 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad

    MTP6N60

    Abstract: MTP6N6
    Text: Æ 7 SGS-THOMSON MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE MTP6N60 V DSS R DS on *d 600 V 1.2 a 6A • HIGH VOLTAGE - 600 V FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING TIMES FOR OPERATIONS AT> 100KHz • EASY DRIVE FOR REDUCED COST AND SIZE


    OCR Scan     		PDF MTP6N60 100KHz O-220 MTP6N60 MTP6N6

    GSP 405 T 125

    Abstract: AN569 MTP6N60E motorola mosfet MTP6N60E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP6N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon G te TMOS POWER FET 6.0 AMPERES 600 VOLTS R D S o n = 1-2 OHMS This high voltage MOSFET uses an advanced termination


    OCR Scan     		PDF MTP6N60E GSP 405 T 125 AN569 motorola mosfet MTP6N60E

    TP6N60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP6N60E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n


    OCR Scan     		PDF MTP6N60E/D TP6N60E 21A-09 TP6N60

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O M S O N ¿ 5 ¡U È T O « 7 M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V MTP6N60 • . ■ . . R DS on Id < 1 .2 a 6.8 A dss 600 V TYPICAL RDS(on) = 1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF MTP6N60 gaTP6N60 ISOWATT22Q

    MTP6N60

    Abstract: smps circuit diagram
    Text: Æ 7 SCS-THO M SO N Räö g»[llLli(g'ir^ R5tl(gi MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR P R E L IM IN A R Y D A TA TYPE MTP6N60 V Dss R DS(on 600 V 1 .2 ß 6 A • HIGH VOLTAGE - 600 V FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING TIMES FOR


    OCR Scan     		PDF MTP6N60 100KHz O-220 N4723 MTP6N60 smps circuit diagram

    MTP2P45

    Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5


    OCR Scan     		PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85