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    MTP2P50 Price and Stock

    onsemi MTP2P50E

    MOSFET P-CH 500V 2A TO220AB
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    DigiKey MTP2P50E Tube
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    MTP2P50E 20
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    Quest Components MTP2P50E 126
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    onsemi MTP2P50EG

    MOSFET P-CH 500V 2A TO220AB
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    Motorola Semiconductor Products MTP2P50E

    2 AMPS, 500 VOLTS P-CHANNEL TO-220 POWER MOSFET Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA MTP2P50E 28
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    MTP2P50 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MTP2P50 Motorola TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM Original PDF
    MTP2P50 Motorola European Master Selection Guide 1986 Scan PDF
    MTP2P50 Motorola Switchmode Datasheet Scan PDF
    MTP2P50 Unknown FET Data Book Scan PDF
    MTP2P50 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MTP2P50 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP2P50 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MTP2P50E Motorola TMOS POWER FET 2.0 AMPERES 500 VOLTS Original PDF
    MTP2P50E Motorola TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM Original PDF
    MTP2P50E On Semiconductor Power MOSFET 2 A, 500 V Original PDF
    MTP2P50E On Semiconductor Power MOSFET 2 Amps, 500 Volts; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original PDF
    MTP2P50E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP2P50E/D On Semiconductor TMOS POWER FET 2.0 AMPERES 500 VOLTS Original PDF
    MTP2P50E/D On Semiconductor TMOS POWER FET 2.0 AMPERES 500 VOLTS Original PDF
    MTP2P50E-D On Semiconductor Power MOSFET 2 Amps, 500 Volts P-Channel TO-220 Original PDF
    MTP2P50EG On Semiconductor Power MOSFET 2 Amps, 500 Volts Original PDF
    MTP2P50EG On Semiconductor Power MOSFET 2 Amps, 500 Volts; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original PDF

    MTP2P50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTP2P50E
    Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA MTP2P50E  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 6.0 OHM P–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTP2P50E/D MTP2P50E AN569 MTP2P50E

    MTP2P50E

    Abstract: MTP2P50EG AN569 mtp2p mosfet transistor 400 volts.100 amperes
    Text: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTP2P50E O-220 MTP2P50E/D MTP2P50E MTP2P50EG AN569 mtp2p mosfet transistor 400 volts.100 amperes

    mosfet transistor 400 volts.100 amperes

    Abstract: mtp2p
    Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA MTP2P50E  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 6.0 OHM P–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTP2P50E/D MTP2P50E MTP2P50E/D mosfet transistor 400 volts.100 amperes mtp2p

    2P50EG

    Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
    Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTP2P50E O-220 MTP2P50E/D 2P50EG 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes

    Untitled

    Abstract: No abstract text available
    Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTP2P50E MTP2P50E/D

    Untitled

    Abstract: No abstract text available
    Text: MTP2P50 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original     		PDF MTP2P50

    Untitled

    Abstract: No abstract text available
    Text: MTP2P50E Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)2 I(DM) Max. (A) Pulsed I(D)1.6 @Temp (øC)100 IDM Max (@25øC Amb)6.0 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		PDF MTP2P50E

    MTP2P50E

    Abstract: AN569 mosfet transistor 400 volts.100 amperes
    Text: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTP2P50E r14525 MTP2P50E/D MTP2P50E AN569 mosfet transistor 400 volts.100 amperes

    AN569

    Abstract: MTP2P50E mosfet transistor 400 volts.100 amperes
    Text: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


    Original     		PDF MTP2P50E O-220 MTP2P50E/D AN569 MTP2P50E mosfet transistor 400 volts.100 amperes

    AN569

    Abstract: MTP2P50E
    Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2P50E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS


    Original     		PDF MTP2P50E/D MTP2P50E MTP2P50E/D* AN569 MTP2P50E

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    MTP2P45

    Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5


    OCR Scan     		PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA M TP2P50E D esigner’s Data Sheet Motorola Preferred Device TMOS E-FET ™ Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate T h is hig h v o lta g e M O S F E T u s e s an a d v a n c e d te rm in a tio n


    OCR Scan     		PDF MTP2P50E/D TP2P50E 21A-09

    MTP4N20

    Abstract: MTP8N18 MTP5N40 mtp8n20 mtp4n35 IRF612 MTH8P20 power mosfets to 204aa T0-204AE MTM2P50
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 MTM2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5 MTM5P20


    OCR Scan     		PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP4N20 MTP8N18 MTP5N40 mtp8n20 mtp4n35 IRF612 MTH8P20 power mosfets to 204aa T0-204AE

    TP2P45

    Abstract: TP2P50 MTP2P45 2P45
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM2P45 MTM2P50 MTP2P45 MTP2P50 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Ch annel Enh an cem en t-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r m e d iu m v o lta g e ,


    OCR Scan     		PDF MTM2P45 MTM2P50 MTP2P45 MTP2P50 T0-204AA TP2P45 TP2P50 2P45

    MTM2P50

    Abstract: MTP2P45 mtm2p45
    Text: MOTOROLA SC X S T R S /R IME D I F b3b7254 G Q flW B | MOTOROLA •H SEMICONDUCTOR I TECHNICAL DATA MTM2P45 MTM2P50 MTP2P45 MTP2P50 Designer's Data Sheet Pow er Field Effect Transistor P-Channe! Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed for medium voltage,


    OCR Scan     		PDF b3b7254 MTM2P50 MTP2P45 mtm2p45

    mtp3n6u

    Abstract: MTP2P45 MTP1N60 MTP1N95 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50
    Text: - 286 - m % ít f ft X t Vd s or * Vd g € V £ n fé (Ta=25tî) Vos (V) Pd Id I gss * /CH * /CH (A) (W) (nA) MTP1N6Û MOT N 600 ±20 1.0 40 MTP1N95 MOT N 950 ±20 1 75 MTP2N18 MOT N 180 ±20 2.0 50 MTP2N20 MOT N 20Q ±20 2.0 50 MTP2N25 MOT N 250 ±20 2


    OCR Scan     		PDF MTP1N60 O-220AB MTP1N95 MTP3N45 MTP3N50 MTP3N50E mtp3n6u MTP2P45 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50

    MTP3N80

    Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
    Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


    OCR Scan     		PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E