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    MTP3N6 Search Results

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    MTP3N6 Price and Stock

    NXP Semiconductors MTP3N60E

    - Bulk (Alt: MTP3N60E)
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    Avnet Americas MTP3N60E Bulk 4 Weeks 1
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    onsemi MTP3N60E

    Tmo Spwr 600V .5R To220 |Onsemi MTP3N60E
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    Newark MTP3N60E Bulk 550
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    SGS Thomson MTP3N60FI

    2.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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    Quest Components MTP3N60FI 9
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    STMicroelectronics MTP3N60FI

    2.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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    Quest Components MTP3N60FI 1
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    Motorola Mobility LLC MTP3N60E

    3A, 600V, 2.2ohm, N-Channel Power MOSFET, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTP3N60E 2 1
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    MTP3N6 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP3N60 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    MTP3N60 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    MTP3N60 Motorola Switchmode Datasheet Scan PDF
    MTP3N60 Motorola European Master Selection Guide 1986 Scan PDF
    MTP3N60 Motorola (MTP3N55) Power Field Effect Transistor Scan PDF
    MTP3N60 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP3N60 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTP3N60 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTP3N60 Unknown FET Data Book Scan PDF
    MTP3N60 Semiconductor Technology High Voltage MOS Power Field Effect Transistors Scan PDF
    MTP3N60 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MTP3N60E Motorola TMOS E-FET High Density Power FET Original PDF
    MTP3N60E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP3N60E Motorola TMOS Power FET 3.0 Amperes 600 Amperes 600 Volts Scan PDF
    MTP3N60E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP3N60E Unknown FET Data Book Scan PDF
    MTP3N60E On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 600V, 1.5A, Pkg Style TO220AB Scan PDF
    MTP3N60E/D On Semiconductor TMOS POWER FET 3.0 AMPERES 600 VOLTS Original PDF
    MTP3N60E-D On Semiconductor TMOS E-FET High Energy Power FET N-Channel Enhanc Original PDF
    MTP3N60FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF

    MTP3N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP3N60 O-220

    mtp3n6

    Abstract: mosfet 600V 30A
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP3N60E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-220 MTP3N60E mtp3n6 mosfet 600V 30A

    MTP3N60

    Abstract: MTP3N6 MTP3N60FI
    Text: MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V 600 V < 2.5 Ω < 2.5 Ω 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF MTP3N60 MTP3N60FI 100oC O-220 ISOWATT220 MTP3N60 MTP3N6 MTP3N60FI

    mtp3n6

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI VDSS RDS(on) ID 600 V 600 V < 2.5Q < 2.5 Q. 3.9 A


    Original     		PDF MTP3N60 MTP3N60FI 100QC O-220 ISOWATT220 100ms mtp3n6

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM3N60 MTP3N55 MTP3N60 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS TMOS POWER FETs 3 AMPERES 'DS(on) = 2.5 OHMS


    Original     		PDF MTM3N60 MTP3N55 MTP3N60 104AA

    2N3904

    Abstract: AN569 MTP3N60E
    Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS


    Original     		PDF MTP3N60E/D MTP3N60E MTP3N60E/D* 2N3904 AN569 MTP3N60E

    mtp3n6

    Abstract: No abstract text available
    Text: MTP3N60E Designer’s Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast


    Original     		PDF MTP3N60E MTP3N60E/D mtp3n6

    MTP3N60

    Abstract: MTP3N60FI MTP3N6
    Text: MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 2.5 Ω < 2.5 Ω 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF MTP3N60 MTP3N60FI 100oC O-220 ISOWATT220 MTP3N60 MTP3N60FI MTP3N6

    MTP3N6

    Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR
    Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS


    Original     		PDF MTP3N60E/D MTP3N60E MTP3N6 MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR

    MTP3N60

    Abstract: MTP3N60FI MTP3N6
    Text: MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 2.5 Ω < 2.5 Ω 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF MTP3N60 MTP3N60FI 100oC O-220 ISOWATT220 MTP3N60 MTP3N60FI MTP3N6

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    NPC-1200

    Abstract: 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad
    Text: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE S External MOSFET connection: by leaving the external MOSFET external to the IC, you can select avalanche proof devices which, in certain cases e.g. low output


    Original     		PDF AND8023/D NCP1200 r14525 NPC-1200 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF MTP3N60 MTP3N60FI MTP3N60/FI ISQWATT220

    TP3N55

    Abstract: No abstract text available
    Text: M O T O RO LA SC XSTRS/R F m e I .0 t.3 t,7 E S 4 0 0 0 ^ 7 0 Ö I MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTM3N60 MTP3N55 MTP3N60 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S POWER FETs


    OCR Scan     		PDF O-220AB 204AA TP3N55

    MTP3N60FI

    Abstract: No abstract text available
    Text: ^ 7 SGS-THOMSON MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE Voss ^OS on •d MTP3N60 MTP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VOLTAGE FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING TIMES FOR


    OCR Scan     		PDF MTP3N60 MTP3N60FI 10OKHz O-220 ISQWATT220 500ms MTP3N60FI

    MTP3N6

    Abstract: No abstract text available
    Text: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS


    OCR Scan     		PDF MTP3N60 MTP3N60FI TP3N60 TP3N60FI 100KHz ATT22Q 500ms MTP3N6

    Untitled

    Abstract: No abstract text available
    Text: * 5 SGS-THOMSON ilLiCTIKMDe 7 mTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V M TP3N60 M TP3N60FI • . . ■ ■ dss 600 V 600 V R DS on Id < 2.5 a < 2.5 a 3.9 A 2.5 A TYPICAL RDS(on) = 2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF mTP3N60 MTP3N60FI TP3N60 TP3N60FI MTP3N60FI

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3N 60E T M O S E -F E T ™ High Energy Pow er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to


    OCR Scan     		PDF MTP3N60E/D 21A-09

    MTM3N60

    Abstract: MTP3N55 p3nb 221A-04 25CC AN569 MTP3N60
    Text: MOTOROLA SEM ICON D UCTO R TECHNICAL DATA MTM3N60 MTP3N55 MTP3N60 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r N-Channel Enhancem ent-M ode Silico n Gate TM OS TM OS POWER FETs 3 AM PERES T h e se T M O S Po w er F E T s are designed for high vo ltage, high


    OCR Scan     		PDF MTM3N60 MTP3N55 MTP3N60 MTM3N60its p3nb 221A-04 25CC AN569 MTP3N60

    mtp3n

    Abstract: TP3N60 A1412
    Text: Si TYPE . MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss MTP3N60 MTP3N60FI . . . . SGS-THOMSON ELiOT ö«S Id R üSion 600 V 600 V 2.5 2.5 ii il 3.9 A 2.5 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED R EPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF MTP3N60 MTP3N60FI MTP3N60/FI mtp3n TP3N60 A1412

    MTP2P45

    Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5


    OCR Scan     		PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85