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    TP6N60 Search Results

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    TP6N60 Price and Stock

    Rochester Electronics LLC NTP6N60

    N-CHANNEL POWER MOSFET
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    DigiKey NTP6N60 Bulk 355
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    onsemi NTP6N60

    - Bulk (Alt: NTP6N60)
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    Avnet Americas NTP6N60 Bulk 4 Weeks 428
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    Newark NTP6N60 Bulk 430
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    Rochester Electronics NTP6N60 79,150 1
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    STMicroelectronics STP6N60M2

    Trans MOSFET N-CH 600V 4.5A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP6N60M2)
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    Avnet Americas STP6N60M2 Tube 16 Weeks 2,000
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    Mouser Electronics STP6N60M2 1,975
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    Newark STP6N60M2 Bulk 1
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    STMicroelectronics STP6N60M2 1,975 1
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    TME STP6N60M2 24 1
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    ComSIT USA STP6N60M2 1,000
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    Avnet Silica STP6N60M2 17 Weeks 50
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    EBV Elektronik STP6N60M2 17 Weeks 50
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    Motorola Semiconductor Products MTP6N60E

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    Bristol Electronics MTP6N60E 16
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    TP6N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TP6N60

    Abstract: MTP6N6
    Text: S G S -T H O M S O N ;L [iO T ô « S M T P 6 N 60 _ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 . • . . V d ss RDS(on I Id 600 V 1.2 fi I 6.8 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    PDF TP6N60 MTP6N60 TP6N60 MTP6N6

    TP6N60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP6N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP6N60E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n


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    PDF MTP6N60E/D TP6N60E 21A-09 TP6N60

    TP6N60

    Abstract: 6N60
    Text: *57 SGS-THOMSON iL iO M K I M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 V dss R DS on Id 600 V < 1.2 a 6.8 A . TYPICAL RDs(on) = 1 f i • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


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    PDF TP6N60 TP6N60 6N60

    P6N60

    Abstract: p6n55 tp6n55 6N55 MTP6N55 TP6N60 SITH 6n55 data MTP6N6 power mosfet 6n60
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 55 M T P 6N 60 P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S These TM O S P ow er FETs are designed fo r h ig h voltag e , high speed p o w e r s w itc h in g a pp licatio n s such as sw itch in g regu la to rs,


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    PDF MTP6N55 P6N60 p6n55 tp6n55 6N55 TP6N60 SITH 6n55 data MTP6N6 power mosfet 6n60

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


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    PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


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    PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    6N60E

    Abstract: p6n60e TP6N60E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 60E TM O S E -F E T ™ P o w er Field E ffe c t T ran sistor M otorola P referred Device N-Channel Enhancement-Mode Silicon G te TMOS POWER FET 6.0 AMPERES 600 VOLTS ^DS on * 1.2 OHMS


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    PDF MTP6N60E 6N60E p6n60e TP6N60E