2x15
Abstract: STPS125U STPS10L25D
Text: POWER RECTIFIERS rz 7 POWER SCHOTTKY DIODES SMA S MB DPAK T 0220AC ^ 7/ D2PAK T0220AB SGS-THOMSON Ranœ iiLiEOTOiDËi ISOWATT22QAB T0247 ISOTOP1 LOW VF SCHOTTKY RECTIFIERS T j max =150°C (except for 15V & 25V @ 125°C) lo V rrm VF @ lo Max (A) (V) STPS5L25B
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0220AC
T0220AB
ISOWATT22QAB
T0247
STPS5L25B
STPS15L25G
STPS20L15G
STPS10L40CG
STPS20L25CG
STPS30L40CG
2x15
STPS125U
STPS10L25D
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B-408 diode
Abstract: ic 4081 pin diagram 230v AC to 30V AC converter circuit diagram ic 4081 230v AC to 30V dC converter circuit diagram L9 zener 9.1 ac to dc converters adjustable to 48 vdc Pin Diagram of ic 4081 VB408 VB408-1
Text: VB408, VB 408B V B 408-1/ V B 408FI HIGH VOLTAGE LINEAR REGULATOR POWER I.C. T A R G ET DATA TYPE ^ V IN,OUT him VOUT 400 V 40 mA 1.25 to V ,n-30 V VB408 VB408-1 VB408FI VB408B • INPUT VOLTAGE UP TO 400 V DC OR 285 V RMS RECTIFIED ■ OUTPUT VOLTAGE ADJUSTABLE FROM 1.25
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VB408,
VB408B
VB408FI
VB408
VB408-1
VB408FI
VB408B,
B-408 diode
ic 4081 pin diagram
230v AC to 30V AC converter circuit diagram
ic 4081
230v AC to 30V dC converter circuit diagram
L9 zener 9.1
ac to dc converters adjustable to 48 vdc
Pin Diagram of ic 4081
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IRF830
Abstract: GC237 IRF830FI IRF 830 IRF831 IRF831FI
Text: 7^237 00HS7Db SÜD • SGTH SCS-THOMSON G IRF830FI IRF831/FI ILlûï^MOûS ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IR F 8 3 0 IR F 8 3 0 F I 500 V 500 V < 1.5 £2 < 1.5 n 4 .5 A 3 A IR F831 IR F 8 3 1 F I 450 V 450 V < 1.5 £2
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00HS7Db
IRF830FI
IRF831/FI
IRF830
IRF830FI
IRF831
IRF831FI
Gl4S71S
IRF830/FI-IRF831/FI
GC237
IRF 830
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HA 1137
Abstract: STP60N05 STP60N05FI
Text: 712'1237 004fci53cî Dñ2 • S6TH SCS-THOMSON l G  L IK S ï^ M O S T P 6 0 N û S S T P 6 0 N 0 5 0 5 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI . ■ ■ . . . . . . V dss R dS OII Id 50 V 50 V < 0.02 Q < 0.02 £2
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004b53cÃ
STP60N05
STP60N05FI
STP60N05
STP60N05FI
0G4b54S
STP60N05/FI
5g05970
HA 1137
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IR D4-D4
Abstract: STPS1535F ISOWATT220AC STPS1535D STPS1545D STPS1545F 1545F SEB1
Text: —# SGS-THOMSON k7 w* KfflD g @[iEUl(gTn^®[RiiD s STPS1535D/F STPS1545D/F POWER SCHOTTKY RECTIFIER • ■ ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY
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STPS1535DF
STPS1545D/F
T0220AC
ISOWATT220AC,
ISOWATT220AC
STPS1535D
STPS1535F
STPS1545D
STPS1545F
IR D4-D4
STPS1535F
ISOWATT220AC
STPS1545F
1545F
SEB1
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STP5NA60 STP5NA60FI STP5NA60 STP5NA60FI dss 600 V 600 V R DS on Id < 1.6 a < 1.6 a 5.3 A 3.4 A • TYPICAL RDS(on) = 1 35 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING
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STP5NA60
STP5NA60FI
STP5NA60/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿ 5 SGS-THOMSON ¡mera « 7 STP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING
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STP10NA40
0NA40FI
TP10NA40
TP10N
A40FI
STP10NA40/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: 7^2^237 *rJ 004b3flS ITO • SGTH SGS-THOMSON i[iJOT «§ STP21N05L STP21N05LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V STP21N 05L STP21NQ5LFI . • . . . . • . R D S o n Id < 0.085 n < 0.085 Q 21 A 14 A dss 50 V 50 V TYPICAL Ros(on) = 0.065 Q
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004b3flS
STP21N05L
STP21N05LFI
STP21N
STP21NQ5LFI
004b3Tl
STP21N05L/FI
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Untitled
Abstract: No abstract text available
Text: STPS20L40CF/CW/CT LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I f a v 2 x 10 A V rrm 40 V Tj (max) 150°C V f (max) 0.5 V A1 A2 • TO-22ÛAB STPS20L40CT FEATURES AND BENEFITS • LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES
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STPS20L40CF/CW/CT
STPS20L40CT
ISOWATT220AB
STPS20L40CF
O-247
STPS20L40CW
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N ¡m e ra « ¿ 5 7 S T P 3 N 100 S T P 3 N 1 0 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S T P 3 N 1 00 S T P 3 N 1 00FI . • . . . . R DS on dss 1000 V 1000 V Id < 5 0 < 5 0 3.5 A 2 A AVALANCHE RUGGED TECHNOLOGY
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STP3N100/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED
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BUZ11
BUZ11FI
BUZ11/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: 7^2^537 Q045752 4^0 • S C T H SGS-THOMSON m IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI V dss R d S o ii Id 50 V 50 V < 0.028 n < 0.028 £i 50 A 27 A TYPICAL R DS(on) = 0.022 Q AVALAN C H E RUGGED TECHNOLO GY
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Q045752
IRFZ40
IRFZ40FI
O-220
ATT220
IRFZ40/FI
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N STP3NA80 STP3NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA80 STP3NA80FI . . . . . . . Voss flosionl 1» 800 V 800 V I < 4 .5 11 1 1 < <».5 n ! 3.1 A 2 A TYPICAL Roster, = 3.5 Q ± 30V GATE TO SOURCE VOLTAGE RATING
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STP3NA80
STP3NA80FI
7T2T237
00b2025
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Untitled
Abstract: No abstract text available
Text: L78M00 SERIES POSITIVE VOLTAGE REGULATORS . OUTPUT CURRENT TO 0.5A . OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION The L78M00 series of three-terminal positive
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L78M00
L78M00
T0-220,
ISOWATT220,
OT-82,
OT-194
ISOWATT22Q
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Untitled
Abstract: No abstract text available
Text: 7 ^ 2 3 7 0D4L50L4 f l t. 3 •SGTH SGS-THOMSON ¡LiOT s«S ¡5 7 STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP 50N 06L STP50N 06LFI V dss R d s ( o ii Id 60 V 60 V < 0 .0 2 8 a < 0 .0 2 8 Q 50 A 2 1 IK ■ TYPICAL RDS(on) = 0.024 Q
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0D4L50L4
STP50N06L
STP50N06LFI
STP50N
06LFI
QCmb510
STP50N06L/FI
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Untitled
Abstract: No abstract text available
Text: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L STP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q
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D0MbS32
STP55N06L
STP55N06LFI
STP55N
06LFI
7T2T537
D04b53fl
STP55N06L/FI
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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MTP3N60
MTP3N60FI
MTP3N60/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: STPR151OD/F STPR1520D/F SGS-THOMSON £ RjflQ»[E[UiM R!lD gi ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY
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STPR151OD/F
STPR1520D/F
T0220AC
STPR1510D
STPR1520D
T0220AC
ISOWATT220AC,
TT220A
STPR1510F
STPR1520F
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ IRF540 IRF540FI N - CHANNEL100V - 00.50Ì2 - 30A - TO-220/TO-220FI POWER MOSFET TYPE IRF540 IR F540FI • . . . . . . . V dss 100 V 100 V R D S (o n ) Id < 0.077 Q. < 0.077 Q. 30 A 16 A TYPICAL RDS(on) = 0.050
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IRF540
IRF540FI
CHANNEL100V
O-220/TO-220FI
F540FI
IRF540/IRF540FI
ISOWATT22Q
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY
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STP20N
TP20N10LFI
STP20N10L
STP20N10LFI
ISOWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STP36N
TP36N05LFI
STP36N06L
STP36N06LFI
STP36N06L/FI
ISQWATT220
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STPR1010CF
Abstract: FZJ 101 stpr 10 cf STPR1020CT 1020CT STPR1010 STPR1010CT 1020CF 1010CF STPR1020CF
Text: STPR1010CT/CF STPR1020CT/CF Æ T SGS-THOMSON ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY A1 . n_ a2- H- ^A 1K
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STPR1010CT/CF
STPR1020CT/CF
T0220AB
ISOWATT220AB,
T0220AB
ISOWATT220AB
STPR1010CT
STPR1020CT
STPR1010CF
STPR1020CF
FZJ 101
stpr 10 cf
STPR1020CT
1020CT
STPR1010
1020CF
1010CF
STPR1020CF
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640CF
Abstract: T0-220AB 620CT STPS630CF T0220AB STPS620CF STPS620CT STPS630CT STPS640CF STPS640CT
Text: SGS -THOMSON BJ1OTWD Ì Ì tpÌ ssoct/cf STPS640CT/CF POWER SCHOTTKY RECTIFIER • ■ ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE
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STPS640CT/CF
T0220AB
ISOWATT220AB,
T0220AB
ISOWATT220AB
STPS620CT
STPS630CT
STPS640CT
STPS620CF
STPS630CF
640CF
T0-220AB
620CT
STPS640CF
STPS640CT
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BYW51F-200
Abstract: T0220AB BYW51 BYW51-200
Text: SGS-THOMSON BYW51 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AB): Insulating voltage = 2000 V DC
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BYW51
ISOWATT220AB)
T0220AB,
ISOWATT220AB
T0220AB
BYW51-200
ISOWATT220AB
BYW51F-200
125oC
7T2TS37
BYW51F-200
T0220AB
BYW51
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