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    204AA Search Results

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    51720-10401204AALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 4P 12S 4P STB Right Angle Header. Visit Amphenol Communications Solutions
    51760-10403204AALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 4P 32S 4P STB Right Angle Receptacle. Visit Amphenol Communications Solutions
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    51721-10003204AALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 32S 4P Right Angle Header. Visit Amphenol Communications Solutions
    51740-10401204AALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 4P 12S 4P STB Vertical Receptacle. Visit Amphenol Communications Solutions
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    JRH Electronics 805-003-22C18-204AA

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    DigiKey 805-003-22C18-204AA 116 1
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    JRH Electronics 805-004-07Z119-204AA

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    DigiKey 805-004-07Z119-204AA 111 1
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    JRH Electronics 805-002-16M18-204AA

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    JRH Electronics 805-002-16ZNU19-204AA

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    JRH Electronics 805-003-07M18-204AA

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    DigiKey 805-003-07M18-204AA 92 1
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    204AA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MV1403

    Abstract: 210PF
    Text: MV1403 TUNING VARACTOR DESCRIPTION: The ASI MV1403 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 140 – 210pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS


    Original     		PDF MV1403 MV1403 D0-204AA 210pF Ct-2/Ct-10 210PF

    mv1404

    Abstract: No abstract text available
    Text: MV1404 TUNING VARACTOR DESCRIPTION: The ASI MV1404 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 90 – 144pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS


    Original     		PDF MV1404 MV1404 D0-204AA 144pF Ct-2/Ct-10

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
    Text: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRM234D, FRM234R, FRM234H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD Rad Hard in Fairchild for MOSFET 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772

    1E14

    Abstract: 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET
    Text: FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRM230D, FRM230R, FRM230H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET

    IRFAG40

    Abstract: No abstract text available
    Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG40 O-204AA/AE) IRFAG40

    IRFAG50

    Abstract: No abstract text available
    Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG50 O-204AA/AE) electrical252-7105 IRFAG50

    FRM9240D

    Abstract: 1E14 2E12 FRM9240H FRM9240R Rad Hard in Fairchild for MOSFET
    Text: FRM9240D, FRM9240R, FRM9240H 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Title RM9 0D, M9 0R, M9 0H bt A, 0V, 20 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, 20 m, d rd, Package • 7A, -200V, RDS on) = 0.720Ω TO-204AA


    Original     		PDF FRM9240D, FRM9240R, FRM9240H -200V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD FRM9240D 1E14 2E12 FRM9240H FRM9240R Rad Hard in Fairchild for MOSFET

    IRF9130

    Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
    Text: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International


    Original     		PDF 90549C IRF9130 JANTX2N6804 JANTXV2N6804 O-204AA/AE) MIL-PRF-19500/562] -100V parellelin252-7105 IRF9130 IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804

    inverter MOSFET 900V 3A

    Abstract: IRFAF40
    Text: PD - 90581 IRFAF40 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF40 BVDSS 900V RDS(on) 2.5Ω ID 4.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAF40 O-204AA/AE) p252-7105 inverter MOSFET 900V 3A IRFAF40

    IRH3130

    Abstract: IRH4130 IRH7130 IRH8130
    Text: PD - 90676D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA/AE IRH7130 100V, N-CHANNEL ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7130 IRH3130 IRH4130 IRH8130 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si)


    Original     		PDF 90676D T0-204AA/AE) IRH7130 IRH3130 IRH4130 IRH8130 1000K O-204AA MIL-STD-750, IRH3130 IRH4130 IRH7130 IRH8130

    IRF9140

    Abstract: No abstract text available
    Text: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF 93976B IRF9140 O-204AA/AE) -100V -100A/ -100V, --TO-204AA IRF9140

    IRF140

    Abstract: irf140 ir IRF1401
    Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF140 O-204AA/AE) param252-7105 IRF140 irf140 ir IRF1401

    irf9240

    Abstract: No abstract text available
    Text: PD - 90420 IRF9240 200V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF9240 BVDSS -200V RDS(on) 0.5Ω ID -11A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF9240 O-204AA/AE) -200V electrical252-7105 irf9240

    IRF4401

    Abstract: IRF440 IRF44
    Text: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF 0372A IRF440 O-204AA/AE) --TO-204AA IRF4401 IRF440 IRF44

    IRF250

    Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
    Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International


    Original     		PDF 90338E IRF250 JANTX2N6766 JANTXV2N6766 O-204AA/AE) MIL-PRF-19500/543] an52-7105 IRF250 irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247

    1E14

    Abstract: 2E12 2N7274D 2N7274H 2N7274R
    Text: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H March 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRM230 2N7274D, 2N7274R 2N7274H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 2N7274D 2N7274H 2N7274R

    MTM4N50

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTM4N50 TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-204AA MTM4N50 MTM4N50

    BUZ211

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ211 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-204AA BUZ211 BUZ211

    MTM15N45

    Abstract: TO-204AA
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTM15N45 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-204AA MTM15N45 MTM15N45 TO-204AA

    Untitled

    Abstract: No abstract text available
    Text: fX S ific o n ix SMM11P20 in c o r p o r a te d P-Channel Enhancement Mode Transistor T0-204AA TO-3 BOTTOM VIEW PRODUCT SUMMARY V (BR)DSS r DS(ON) •d (V) (A) (A) -200 0.50 -1 1 1 DRAIN (CASE) 2 GATE 3 SOURCE ABSO LU TE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1


    OCR Scan     		PDF SMM11P20 T0-204AA 10peration

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


    OCR Scan     		PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059

    Untitled

    Abstract: No abstract text available
    Text: 1N5142 asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA -nrB MAXIMUM RATINGS - 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C


    OCR Scan     		PDF 1N5142 1N5142 D0-204AA

    4N50

    Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
    Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB


    OCR Scan     		PDF 34tclt 0e7117 IRF430-433/IRF830-833 MTM/MTP4N45/4N50 t-39-11 O-22QAB IRF430 IRF431 IRF432 IRF433 4N50 IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431

    Untitled

    Abstract: No abstract text available
    Text: 1N5140A asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5140A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters Inches Dim: Min Max Min Max A 5.84 7.62 0.230 0.300 250 mA B 2.16 2.72 0.085 0.107 D 0.46 0.56 0.018


    OCR Scan     		PDF 1N5140A 1N5140A D0-204AA