CNY37
Abstract: MCP3040 4n33 and 4n35 mct81 MRD901 4N25 CROSS MOC70T-1 MOC70T1 moc3020 datasheet application notes CQX47
Text: CR104/D GENERAL INSTRUMENT-TO-MOTOROLA OPTOELECTRONICS CROSS REFERENCE ISOLATORS General Instrument MOTOROLA Code General Instrument MOTOROLA Code 4N25, A 4N25, A A MCP3009, 10 MOC3009, 10 A 4N26 4N26 A MCP3011, 3011A MOC3011 A 4N27 4N27 A MCP3012 MOC3012
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CR104/D
MCP3009,
MOC3009,
MCP3011,
MOC3011
MCP3012
MOC3012
MCP3020,
MOC3020,
MCP3022,
CNY37
MCP3040
4n33 and 4n35
mct81
MRD901
4N25 CROSS
MOC70T-1
MOC70T1
moc3020 datasheet application notes
CQX47
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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ATV5030
ATV5090B
ATV6031
ATV6060H
ATV7050
BAL99LT1
BAS16LT1
BAS21LT1
BAV70LT1
BAV74LT1
MLED96
BRX49 SCR
MRF549
ATV5030
MRF660
MRF548
mmbr2857lt1
CR2428
MPF3822
MRF548 MOTOROLA
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MLED96
Abstract: MRD821 MLED81 MRD921 MRD500 MRD300 MRD360 MRD911 MRD950 MRD901
Text: Section Seven Discrete Em itters/Detectors MLED81 . 7-2 MLED91 . 7-4 MLED96 . 7-7
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MLED81
MLED91
MLED96
MLED97
MLED930
MRD300
MRD360
MRD500
MRD821
MLED96
MRD821
MLED81
MRD921
MRD500
MRD300
MRD360
MRD911
MRD950
MRD901
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MLED910
Abstract: dioda LED MLED91 silicon solar cell "by 236" diode
Text: MLED910 INFRARED-EMITTING DIODE . . . designed for applications requiring high density mounting, high power output, low drive power and very fast response time. This device is used in industrial processing and control, light modulators, shaft or position encoders, punched card and tape readers, optical
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MLED910
MLED910
dioda LED
MLED91
silicon solar cell
"by 236" diode
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MLED91
Abstract: a468a MRD901
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MLED91 Series Advance Information Infrared 940 nm LED The MLED91 series 940 nm LEDs are multi-purpose devices capable for use in numerous applications. These Gallium Arsenide devices are m anufactured to tight tolerances for maximum perform ance and long lifetime. The devices can be
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MLED91
MRD900
MLED91RLRE
MLED91A
MLED91A
a468a
MRD901
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MRD950
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Digital Output D etector Features: • Popular Low Cost Plastic Package • High Coupling Efficiency • Wide V c c Range • Ideally Suited for MLED91 Emitter • Usable to 125 kHz • Open Collector Output
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MLED91
MRD950RLRE)
MRD950
MRD950
MLED91
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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MLED900
Abstract: MLED910 SILICON DICE motorola
Text: MOTOROLA SC ~3M O IO D E S /Ô P T O } 6367255 MOTOROLA SC » F |t> 3 t7 E S S 34c DIODES/OPTO D G 3 ñ lt7 38167 S | ~ D / SILICON OPTOELECTRONIC DICE (continued) T - 41 - 1 9 MLDC2 DIE NO. LINE SOURCE — DOL91 This die provides performance equal to or better than that
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DOL91
MLED900
MLED910
MLED930
SILICON DICE motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Advance Information PhotoDarlington Detector T h e M R D 9 1 1 Silicon photodetector is a high sensitivity, m ulti-purpose photodetector. Its side-looking package is designed for use in P C board mounted interruptive, reflective, and light level se n sin g applications. The device is ideally
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10CTC
MRD911
MLED91
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MRD921
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information PIN Photodiode D etector The MRD921 Silicon Photodiode detectors are high speed, multi-purpose devices for use in multiple applications. The side-looking package is designed lor PC Board mounted interruptive, reflective, and light level sensing. The device is
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MRD921
MLED91
MRD921
MLED91
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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TRANSISTOR ED203
Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Text: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the
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1N2175
TRANSISTOR ED203
FND10
MAN-3A
2N3980
LA 4301
do ic 4532A free
germanium
Germanium drift transistor
texas instruments LED Display TIL
epitaxial mesa
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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MRD901
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD901 Series Advance Information Phototransistor Detector M o to ro la P re fe rre d D e v ic e * The MRD901 series Silicon phototransistor detectors are m ulti-purpose de vices capable for use in many applications. It is a side looking package that is
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MRD901
MLED91
MRD901
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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33B50-31D5
Abstract: Dl06 3SB63 DL09
Text: ID I 39B60-B102 CNE LATCH DETAIL PDSITIDNED DN THIS EI\D. NOTES: 1. 2. 3. 4. 5. SD-39860-001 3.6 1.141 MATERIAL: SEE TABLE FINISHES: SEE TABLE PRODUCT SP EC IFIC A TIO N NDT REDUIRED PACKAGING: NDT REQUIRED MATES WITH: 5 .0B n n .2 0 0 in BEAU EURDSTYLE
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39B60-B102
SO-39860-001"
200in)
39B6D
12-B-Dl
9685XX
SO-39BBO-DQ1
33B50-31D5
Dl06
3SB63
DL09
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MRD911
Abstract: No abstract text available
Text: OTO ROLA SC DIODES/OPTO b t4E D • b 3 b ? 2 5 5 DOflbV^D BTT IM0T7 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Advance Information PhotoDarlington D etector The MRD911 Silicon photodetector is a high sensitivity, multi-purpose photodetector. Its side-looking package is designed for use in PC board mounted
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MRD911
MLED91
MRD911
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4L3052
4L3056
wiring diagram audio amplifier ic 6283
germanium
Transistor Shortform Datasheet & Cross References
halbleiter index transistor
2N5160 MOTOROLA
transistor ITT 2907
1N5159
2N 5574
inverter welder 4 schematic
diagrams de ic lg 8838
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TIL702
Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or
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LCC4230-D
EPN4050
TIL702
TIL701
TIL393-9
til78 phototransistor
TIL81
til312 7 segment display
TIL78
TIL393
TIL313
TIL393-6
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information OPTO TVansceiver and Reflective Sensor Features: • Low Degradation IR LED and NPN Phototransistor • Low Cost • New Mold Technology Improves Performance Under Variable Environmental Conditions
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MOC9000RLRE)
MOC9000
2870-K)
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