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    MJ 1505 Search Results

    MJ 1505 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC1505L Rochester Electronics LLC A/D Converter Visit Rochester Electronics LLC Buy
    UPD78F1505AGC-UEU-AX Renesas Electronics Corporation 16-bit Low-power Microcontrollers for Applications Using LCD Display (Non Promotion) Visit Renesas Electronics Corporation
    UPD78F1505AGC(R)-UEU-AX Renesas Electronics Corporation 16-bit Low-power Microcontrollers for Applications Using LCD Display (Non Promotion) Visit Renesas Electronics Corporation
    ZL1505ALNNT1 Renesas Electronics Corporation Synchronous Step-Down MOSFET Drivers, DFN, /Reel Visit Renesas Electronics Corporation
    ZSPM1505KIT01V1P0 Renesas Electronics Corporation Evaluation Kit for the ZSPM15xx Visit Renesas Electronics Corporation
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    MJ 1505 Price and Stock

    Intel Corporation FJ8071505204505SRMJL

    CPU - Central Processing Units Intel Core i7-1370PE Processor (24M Cache, up to 4.80 GHz) FC-BGA16F, Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FJ8071505204505SRMJL
    • 1 $553.39
    • 10 $536.73
    • 100 $536.73
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    • 10000 $536.73
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    Intel Corporation FJ8071505204200S RMJ4

    CPU - Central Processing Units Core i9-13900H Processor (24M Cache, up to 5.40 GHz) FC-BGA16F, Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FJ8071505204200S RMJ4
    • 1 $751.69
    • 10 $740.02
    • 100 $740.02
    • 1000 $740.02
    • 10000 $740.02
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    Intel Corporation FJ8071505204101S RMJ3

    CPU - Central Processing Units Core i9-13900HK Processor (24M Cache, up to 5.40 GHz) FC-BGA16F, Tray
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    Mouser Electronics FJ8071505204101S RMJ3
    • 1 $848.09
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    Intel Corporation FJ8071505204610SRMJN

    CPU - Central Processing Units Intel Core i5-1340PE Processor (12M Cache, up to 4.50 GHz) FC-BGA16F, Tray
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    Mouser Electronics FJ8071505204610SRMJN
    • 1 $394.89
    • 10 $383.01
    • 100 $383.01
    • 1000 $383.01
    • 10000 $383.01
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    Intel Corporation FJ8071505203704SRMJH

    CPU - Central Processing Units Intel Core i5-13600HE Processor (18M Cache, up to 4.80 GHz) FC-BGA16F, Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FJ8071505203704SRMJH
    • 1 $397.58
    • 10 $385.61
    • 100 $385.61
    • 1000 $385.61
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    Find more MJ 1505 price and stock on Findchips.com

    MJ 1505 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NGB8207B

    Abstract: No abstract text available
    Text: NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8207N, NGB8207BN NGB8207N/D NGB8207B

    8207NG

    Abstract: AYWW marking code IC
    Text: NGB8207N Product Preview Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8207N NGB8207N/D 8207NG AYWW marking code IC

    1505C

    Abstract: 405C NGB8207N NGB8207NT4G 8207NG
    Text: NGB8207N Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8207N NGB8207N/D 1505C 405C NGB8207N NGB8207NT4G 8207NG

    Untitled

    Abstract: No abstract text available
    Text: NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8207N, NGB8207BN NGB8207N/D

    G15N60

    Abstract: G15N60S1G NGTG15N60 NGTB15N60S1
    Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The


    Original     		PDF NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 NGTB15N60S1

    NGTB15N60S1EG

    Abstract: 15N60S1G
    Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The


    Original     		PDF NGTB15N60S1EG NGTB15N60S1E/D 15N60S1G

    Untitled

    Abstract: No abstract text available
    Text: Bfihjlgu_^bkdh\u_d_jZfbq_kdb_dhg^_gkZlhju L_fi_jZlmjgh-dhfi_gkbjh\Zggu_  \ukhdhc^h[jhlghklvx  \ 


    Original     		PDF Q1000,

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    MOSFET 300A 400v

    Abstract: RHR15060 HA 3089 RHR15040 RHR15050 RHRU15040 RHRU15050 RHRU15060 SINGLE LEAD TO-218 ru15060
    Text: HA RR IS S E N I C O N D S E CT OR b3E D £11 HARRIS U l s E M ' o o . D u c ’ • 4302273, OOMfllS'i tl .2 * H A S R H R U 15040 R H R U 15050, R H R U 15060 0 R PRELIMINARY 150A, 400V - 600V Hyperfast Diode August 1993 Features • Package SINGLE LEAD TO-218 STYLE


    OCR Scan     		PDF RHRU15040 RHRU15050, RHRU15060 RHRU15040, RHRU15050 TA49071) 1-800-4-HARRIS MOSFET 300A 400v RHR15060 HA 3089 RHR15040 RHR15050 RHRU15060 SINGLE LEAD TO-218 ru15060

    CD 1517

    Abstract: USSR DIODE IRFI634G
    Text: PD-9.738 International S Rectifier IRFI634G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss = 250V ^DS on = 0 -4 5 & lD = 5.6A


    OCR Scan     		PDF IRFI634G O-220 CD 1517 USSR DIODE IRFI634G

    1xys

    Abstract: 90a944
    Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200


    OCR Scan     		PDF 60N60 OT-227 1xys 90a944

    1RF620

    Abstract: 1RF620S 317H IRF620 RF620 SMD-220 smd diode marking 9 ba ISD25 ScansUX1015
    Text: PD-9.317H International IiorIRectifier IRF620 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Vdss=200V R DS{on - 0 - 8 0 ^ lD = 5.2A Description DATA SHEETS


    OCR Scan     		PDF IRF620 O-220 2SRF620S 1RF620 1RF620S 317H RF620 SMD-220 smd diode marking 9 ba ISD25 ScansUX1015

    1RF640

    Abstract: 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s IRF640 1D11A IRF640 smd IRF640 applications note
    Text: PD-9.374G International â ü Rectifier IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V R DS on = 0 . 1 8 0 lD = 18A Description DATA


    OCR Scan     		PDF IRF640 T0-220 O-220 1RF640 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s 1D11A IRF640 smd IRF640 applications note

    smd diode 1336

    Abstract: DIODE 1334 smd 1RL530 smd diode 1334 562C AN-994 IRL530 IRL530S SMD-220 Diode Marking 016
    Text: PD-9.562C International J& R \ Rectifier IRL530- HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on) Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling


    OCR Scan     		PDF IRL530' T0-220 O-220 50Kfl smd diode 1336 DIODE 1334 smd 1RL530 smd diode 1334 562C AN-994 IRL530 IRL530S SMD-220 Diode Marking 016

    1RF520

    Abstract: AVW smd smd ht1 AN-994 IRF520 IRF520S SMD-220 ScansUX1012
    Text: PD-9.313K International raR Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 100 V R DS on “ 0 -2 7 Î2


    OCR Scan     		PDF IRF520 T0-220 1RF520 AVW smd smd ht1 AN-994 IRF520S SMD-220 ScansUX1012

    5210s

    Abstract: MOSFET smd marking kl 1ER2 AN-994 IRL510 IRL510S SMD-220 arej
    Text: International ü ë ]Rectifier PD-9.560C IRL510 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling


    OCR Scan     		PDF IRL510 O-220 5210s MOSFET smd marking kl 1ER2 AN-994 IRL510S SMD-220 arej

    1RFZ48

    Abstract: RFZ48 RG-910 AN-994 IRFZ48 IRFZ48S SMD-220 d72a
    Text: PD-9.758 International k ?r Rectifier IRFZ48 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching Ease of Paralleling ^ D SS- 60V ^DS on = 0 .0 1 8 Q


    OCR Scan     		PDF IRFZ48 O-220 IRFZ48S 1RFZ48 RFZ48 RG-910 AN-994 SMD-220 d72a

    1RFZ48

    Abstract: RFZ48 smd JSs diode RFZ4
    Text: PD-9.758 International k ?r Rectifier IRFZ48 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching Ease of Paralleling ^ D SS- 60V ^DS on = 0 .0 1 8 Q


    OCR Scan     		PDF O-220 IRFZ48 IRFZ48S 1RFZ48 RFZ48 smd JSs diode RFZ4

    mj 1504 transistor

    Abstract: transistor mj 1504 transistors mj 1504 of mj 1504 transistor
    Text: Philips Semiconductors Preliminary specification PowerMOS transistors PHP6NA60E Low capacitance Avalanche energy FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching


    OCR Scan     		PDF PHP6NA60E T0220AB) mj 1504 transistor transistor mj 1504 transistors mj 1504 of mj 1504 transistor

    A6165

    Abstract: fr1s 15C6 CAB-54C JD 1806 6605 11C6 CAB32 cab-47 mn 9105
    Text: Lrttte Rebete are one of Ohmite's more economical lines o i low wattage resistors. Constructed of a pure carton film deposited on a higi\-flrade c eram c body, these unit* orter better stability perfor­ m ance than comparable carbon composition resistors.


    OCR Scan     		PDF 10-1M CAB-23? CAB-43F CAB-24F CAB-44f CA3-14F 0-39-47K 3XM00K 50-100K A6165 fr1s 15C6 CAB-54C JD 1806 6605 11C6 CAB32 cab-47 mn 9105

    1rf1010

    Abstract: J35A IRF1010S IRF1010 irf1010 MOSFET 1RF10
    Text: PD-9.814 International K R e ctifie r IR F 1 Ö 10 HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling


    OCR Scan     		PDF IRF10Ã O-220 1rf1010 J35A IRF1010S IRF1010 irf1010 MOSFET 1RF10

    diode B14A

    Abstract: B14A diode 1RFP450 diode b14A surface B14A B14A marking 1D24 IRFP450
    Text: International Rectifier PD-9.458C IRFP450 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 500V ^DS on = 0 -4 0 Í2


    OCR Scan     		PDF IRFP450 O-247 T0-220 O-218 diode B14A B14A diode 1RFP450 diode b14A surface B14A B14A marking 1D24

    315J

    Abstract: IRF720 ScansUX1018
    Text: PD-9.315J International i“r Rectifier IRF720 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = 400V ^DS on — 1 - 8 0 lD = 3.3A Description DATA


    OCR Scan     		PDF IRF720 O-220 150KCÃ 315J ScansUX1018

    irf630

    Abstract: RD161
    Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA


    OCR Scan     		PDF IRF630 O-220 irf630 RD161