Untitled
Abstract: No abstract text available
Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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NGTB15N60S1EG
NGTB15N60S1E/D
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15N60S1G
Abstract: No abstract text available
Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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Original
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PDF
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NGTB15N60S1EG
NGTB15N60S1E/D
15N60S1G
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Untitled
Abstract: No abstract text available
Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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Original
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PDF
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NGTB15N60S1EG
NGTB15N60S1E/D
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15N60
Abstract: NGTB15N60S1EG
Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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Original
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PDF
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NGTB15N60S1EG
NGTB15N60S1E/D
15N60
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NGTB15N60S1EG
Abstract: 15N60S1G
Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The
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Original
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PDF
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NGTB15N60S1EG
NGTB15N60S1E/D
15N60S1G
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