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    IRF640 Price and Stock

    Infineon Technologies AG IRF640NPBF

    MOSFET N-CH 200V 18A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF640NPBF Tube 48,465 1
    • 1 $1.23
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    • 100 $1.23
    • 1000 $0.4405
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    Avnet Americas IRF640NPBF Tube 152,867 10 Weeks 1
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    IRF640NPBF Bulk 17 Weeks, 5 Days 1
    • 1 $0.863
    • 10 $0.69
    • 100 $0.547
    • 1000 $0.458
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    Mouser Electronics IRF640NPBF 27,945
    • 1 $0.95
    • 10 $0.721
    • 100 $0.517
    • 1000 $0.44
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    Newark IRF640NPBF Bulk 54,882 1
    • 1 $0.832
    • 10 $0.675
    • 100 $0.538
    • 1000 $0.458
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    RS IRF640NPBF Bulk 3 Weeks 50
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    • 100 $0.86
    • 1000 $0.82
    • 10000 $0.73
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    TME IRF640NPBF 2,276 1
    • 1 $0.807
    • 10 $0.654
    • 100 $0.531
    • 1000 $0.44
    • 10000 $0.44
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    Chip 1 Exchange IRF640NPBF 3,945
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    EBV Elektronik IRF640NPBF 57,000 11 Weeks 1,000
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    New Advantage Corporation IRF640NPBF 49,550 1
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    • 1000 $0.4857
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    Win Source Electronics IRF640NPBF 355,700
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    • 1000 $0.235
    • 10000 $0.204
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    Rochester Electronics LLC IRF640ACP001

    MOSFET N-CH 200V
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    DigiKey IRF640ACP001 Bulk 1,250 346
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    • 1000 $0.87
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    Vishay Siliconix IRF640STRRPBF

    MOSFET N-CH 200V 18A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF640STRRPBF Reel 800 800
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    • 1000 $1.33634
    • 10000 $1.24875
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    Infineon Technologies AG IRF640NLPBF

    MOSFET N-CH 200V 18A TO262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF640NLPBF Tube 377 1
    • 1 $2.57
    • 10 $2.57
    • 100 $2.57
    • 1000 $2.57
    • 10000 $2.57
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    Avnet Americas IRF640NLPBF Tube 4 Weeks 420
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    • 10000 $0.79255
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    Newark IRF640NLPBF Bulk 1
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    RS IRF640NLPBF Bulk 5
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    • 10 $1.06
    • 100 $1.06
    • 1000 $1.06
    • 10000 $1.06
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    Win Source Electronics IRF640NLPBF 1,050
    • 1 -
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    • 100 $1.798
    • 1000 $1.508
    • 10000 $1.508
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    STMicroelectronics IRF640

    MOSFET N-CH 200V 18A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF640 Tube
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    Bristol Electronics IRF640 20
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    Quest Components IRF640 360
    • 1 $3.03
    • 10 $3.03
    • 100 $2.02
    • 1000 $1.8685
    • 10000 $1.8685
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    Win Source Electronics IRF640 58,387
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    • 100 $0.707
    • 1000 $0.471
    • 10000 $0.471
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    Find more IRF640 price and stock on Findchips.com

    IRF640 Datasheets (106)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF640 Fairchild Semiconductor 18A, 200V, 0.180 ?, N-Channel Power MOSFETs Original PDF
    IRF640 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF640 Intersil 18A, 200V, 0.180 ?, N-Channel Power MOSFETs Original PDF
    IRF640 On Semiconductor Power Field Effect Transistor Original PDF
    IRF640 Philips Semiconductors N-channel TrenchMOS transistor Original PDF
    IRF640 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 18A TO-220 Original PDF
    IRF640 STMicroelectronics N-Channel 200V - 0.150 Ohm - 18A TO-220-TO-220FP MESH OVERLAY MOSFET Original PDF
    IRF640 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRF640 STMicroelectronics N-CHANNEL 200V - 0.150 Ohm - 18A TO-220-TO-220FP Original PDF
    IRF640 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF640 FCI POWER MOSFETs Scan PDF
    IRF640 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF640 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF640 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF640 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF640 International Rectifier HEXFET Power Mosfet Scan PDF
    IRF640 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 200V, 18A, Pkg Style TO-220AB Scan PDF
    IRF640 Motorola Switchmode Datasheet Scan PDF
    IRF640 Motorola European Master Selection Guide 1986 Scan PDF
    IRF640 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRF640 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF640 applications note

    Abstract: IRF640 circuit
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit

    IRF640

    Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco

    MOSFET 640N

    Abstract: IRF640NS irf640* spice irf640n circuit using irf640n
    Text: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRF640N/IRF640NS/IRF640NL O-263 O-262 O-220 100oC, MOSFET 640N IRF640NS irf640* spice irf640n circuit using irf640n

    irf640

    Abstract: IRF640FP IRF640 P CHANNEL MOSFET
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET

    irf640

    Abstract: 5d surface mount diode IRF640L IRF640S SiHF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)


    Original     		PDF IRF640S, IRF640L, SiHF640S SiHF640L O-263) O-262) 18-Jul-08 irf640 5d surface mount diode IRF640L IRF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF

    IRF640PBF

    Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF640, SiHF640 O-220 O-220 50lectual 18-Jul-08 IRF640PBF IRF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3

    IRF640B

    Abstract: irfs640b IRF series
    Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF640B/IRFS640B IRF640B irfs640b IRF series

    IRF640

    Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
    Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco

    IRF640

    Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
    Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    irf640

    Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640FP • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    irf7309

    Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
    Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S


    Original     		PDF OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A† 150L10A† DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964

    irf640

    Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm

    AN-994

    Abstract: IRF640NL IRL3103L
    Text: PD - 95046 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF640NPbF IRF640NSPbF IRF640NLPbF l HEXFET Power MOSFET


    Original     		PDF IRF640NPbF IRF640NSPbF IRF640NLPbF O-220 O-220AB AN-994. AN-994 IRF640NL IRL3103L

    IRF640 applications note

    Abstract: IRF640 circuit IRF640 n-channel MOSFET
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit IRF640 n-channel MOSFET

    irf6401

    Abstract: IRF640R IRF642R 640r IFIF643R IRF641R IRF643R
    Text: Rugged Power M OSFETs_ IRF640R, IRF641R, IRF642R, IRF643R File Num ber 2010 Avalanche Energy Rated N-Channel Power MOSFETs 1 6 A a n d rDs on N -C H A N N E L E N H A N C E M E N T M O D E 18A , 2 0 0 V , 1 5 0 V = 0 .1 8 0 a n d 0 .2 2 0


    OCR Scan     		PDF IRF640R, IRF641R, IRF642R, IRF643R 92CS-42658 IRF642R IFIF643R F640R irf6401 IRF640R 640r IRF641R IRF643R

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF640/641 FEATURES • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF640/641 IRF640 IRF641

    IRF 260 N

    Abstract: irf 640 IRF640 F640 TT220 IRF641 irf 80 n
    Text: 640 /FI 641/FI SGS-THOMSON ELiOT@KS IRF IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R D S on Id IRF640 IRF640FI 200 V 200 V 0.18 n 0.18 n 18 A 10 A IRF641 IRF641FI 150 V 150 V 0.18 a 0.18 n 18 A 10 A . • . ■ V dss AVALANCHE RUGGEDNESS TECHNOLOGY


    OCR Scan     		PDF 641/FI IRF640 IRF640FI IRF641 IRF641FI O-220 ATT220 640/FI 640/FI-64 IRF 260 N irf 640 F640 TT220 irf 80 n

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • IRF640, IRF640S QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance V dss —200 V lD = 16 A


    OCR Scan     		PDF IRF640, IRF640S IRF640 T0220AB) IRF640S OT404

    motorola irf640

    Abstract: 643 lt IRF 640 mosfet IRF640 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 IRF641 IRF642 IRF643 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM OS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF640 IRF641 IRF642 IRF643 IRF640, IRF642, motorola irf640 643 lt IRF 640 mosfet IRF640 mosfet

    IRF640FI

    Abstract: GC525
    Text: ¿57 S G S -T H O M S O N ¡m e ra « IR F 6 4 0 IR F 6 4 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V IRF640 IRF640FI dss 200 V 200 V R DS on < 0.18 < 0.18 a a Id 18 A 10 A . TYPICAL RDs(on) = 0.145 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF IRF640 IRF640FI O-220 ISOWATT220 IRF640FI IRF640/FI ISOWATT22Q GC525

    Untitled

    Abstract: No abstract text available
    Text: IRF640, RF1S640SM Semiconductor Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    OCR Scan     		PDF IRF640, RF1S640SM 180i2