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    NGTB15N60S1EG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB15N60S1EG On Semiconductor NGTB15 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF

    NGTB15N60S1EG Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTB15N60S1EG NGTB15N60S1E/D

    15N60S1G

    Abstract: No abstract text available
    Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTB15N60S1EG NGTB15N60S1E/D 15N60S1G

    Untitled

    Abstract: No abstract text available
    Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTB15N60S1EG NGTB15N60S1E/D

    15N60

    Abstract: NGTB15N60S1EG
    Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTB15N60S1EG NGTB15N60S1E/D 15N60

    NGTB15N60S1EG

    Abstract: 15N60S1G
    Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The


    Original     		PDF NGTB15N60S1EG NGTB15N60S1E/D 15N60S1G

    G15N60S1G

    Abstract: No abstract text available
    Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G

    CECA

    Abstract: MS-2758
    Text: 技术文章 MS-2758 利用数字隔离器技术增强工业电 机控制性能 作者：Dara O'Sullivan 系统工程师 和Maurice Moroney (技术营销经理)，ADI公司 隔离类型简介 隔离用户及敏感电子部件是电机控制系统的重要考虑事


    Original     		PDF MS-2758 MS-2576æ NGTB15N60S1EGï TA12881sc-0-11/14 CECA MS-2758

    G15N60

    Abstract: G15N60S1G NGTG15N60 g15N6 NGTG15N60S1EG 22W8
    Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 g15N6 22W8

    G15N60S1G

    Abstract: No abstract text available
    Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G

    G15N60

    Abstract: NGTG15N60 G15N60S1G
    Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		PDF NGTG15N60S1EG NGTG15N60S1E/D G15N60 NGTG15N60 G15N60S1G