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    tvs 6ae

    Abstract: SMA6F20A marking 6ap 6bg 92 M 600-AG 6BG TVS GENERAL SEMICONDUCTOR diodes marking code me
    Text: V ishay I n tertech n o l o g y, I n c . Diodes – Industry’s Lowest Profile SlimSMA Package I INNOVAT AND TEC O L OGY SMA6F5.0A thru SMA6F20A N HN DIODES O 19 62-2012 Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES • Very low profile – 0.95 mm


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    PDF SMA6F20A 23-Nov-11 VMN-PT0322-1206 tvs 6ae marking 6ap 6bg 92 M 600-AG 6BG TVS GENERAL SEMICONDUCTOR diodes marking code me

    AH276Z4-G1

    Abstract: AH276 AH276Z4-AE1 AH276Z4-BE1 AH276Z4-CE1
    Text: Product Brief VOLTAGE DETECTOR COMPLEMENTARY OUTPUT HALL EFFECT LATCH Description AZ70XX AH276 Parametric Table The AH276 is an integrated sensor withdetectors output driver AZ70XX series ICs areHall under voltage with Supply Output Voltage Saturation Max


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    PDF AZ70XX AH276 AH276 AZ70XX 350mA) OT-89-3 AH276Z4-G1 AH276Z4-AE1 AH276Z4-BE1 AH276Z4-CE1

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . DIODES SMA6F5.0A thru SMA6F20A Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES • Very low profile – 0.95 mm • SMA footprint compatible • Peak pulse power –– 600 W at 10/1000 µs


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    PDF SMA6F20A For100

    AO4614B

    Abstract: AO4614BL
    Text: AO4614B Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614B/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.


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    PDF AO4614B AO4614B/L AO4614B AO4614BL -AO4614BL

    Untitled

    Abstract: No abstract text available
    Text: 212 54F/74F212 Connection Diagrams 144-Bit Random Access Memory With 3-State Outputs S L9 DascrTp scnpt The ’F; eed 144-bit Random Access Memory RAM organized by 9-bit array. Address inputs are buffered to minimize loadT areJAiU>t.decoded on chip. The output buffers are


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    PDF 54F/74F212 144-Bit 54F/74F

    Untitled

    Abstract: No abstract text available
    Text: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte


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    PDF TMS28F040 304-BIT SMJS040-DECEMBER A0-A18 32-pin 40-pin

    stk 442 -130

    Abstract: xc68hc711 XC68HC711D3 M68HC711D3 C45A M68HC11EVM MC68HC11 MC68HC711D3 ic stk 441 EEPR
    Text: MC68HC711D3/D Rev. 1 MC68HC711D3 TECHNICAL DATA MOTOROLA MC68HC711D3 HCMOS MICROCONTROLLER UNIT Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out


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    PDF mc68hc711d3/d MC68HC711D3 suitabilitMC68HC711D3 MC68HC711D3/D 1ATX22547-4 stk 442 -130 xc68hc711 XC68HC711D3 M68HC711D3 C45A M68HC11EVM MC68HC11 MC68HC711D3 ic stk 441 EEPR

    Untitled

    Abstract: No abstract text available
    Text: EL7104C/EL7114C Features G eneral D escription • Industry standard driver replacement • Improved response times • Matched rise and fall times • Reduced clock skew • Low output impedance • Low input capacitance • High noise immunity • Improved clocking rate


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    PDF EL7104C/EL7114C EL7104C/EL7114C TC-4420/29 L7104 DQD37m 00D371S

    cj cl a17

    Abstract: No abstract text available
    Text: TMS29LF004T, TMS29LF004B 524288 BY 8-BIT FLASH MEMORIES Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization: 524288 x 8 Bits Array Blocking Architecture • • • • - • • • • • • • • • One 16K-Byte Protected-Boot Sector


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    PDF TMS29LF004T, TMS29LF004B SMJS850 16K-Byte 32K-Byte 64K-Byte cj cl a17

    2T931A

    Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
    Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K


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    PDF MOKP51KOB, KTC631 TI2023 II2033 TT213 TI216 fI217 II302 XI306 n306A 2T931A KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A

    HARRIS 82C54

    Abstract: CS82C54-10 P82C54
    Text: HARRIS SEMICOND SECTOR MbE D • M302E71 DD3flb'fll 3 « H A S R O C ' R A H A R R I S S E M I C O N D U C T O R i / i f a T - 3 Z .- 3 3 - 0 5 February CM OS Programmable Interval Timer 1992 Features Description • 10MHz or 8MHz Clock Input Frequency The Harris 82C54 is a high performance C M O S Programma­


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    PDF M302E71 82C54 16-bit 82C54) 10MHz 82C54-10) 80C86, 80C88, HARRIS 82C54 CS82C54-10 P82C54

    Untitled

    Abstract: No abstract text available
    Text: 52E D H = 7 *7fn • 7=^237 S C S -1 H O M S O N L' Iiu r a m « D037Sbb OTT ■ SGTH s fi ^ hohson M 27C512 CMOS 512K 64K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION:


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    PDF D037Sbb 27C512 M27C512 FDIP28W PDIP28 PLCC32 PTS028

    FZJ 101

    Abstract: 772t presto II Thomson capacitors lcc M27C405 M27V405 PLCC32 TSOP32 D772
    Text: r = 7 *7 # S G S -T H O M S O N « O S m iS T G M D I ê i M 2 7 V 4 0 5 LOW VOLTAGE 4 Megabit 512K x 8 OTP EPROM PRELIMINARY DATA • PIN COMPATIBLE with the 4 MEGABIT, SINGLE VOLTAGE FLASH MEMORY ■ LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns


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    PDF M27V405 120ns 48sec. 27sec. M27V405 M27C405 PLCC32 TSOP32 micro-processorsys/13 FZJ 101 772t presto II Thomson capacitors lcc PLCC32 TSOP32 D772

    800w power amplifier circuit diagram

    Abstract: ANI 1015 ISO calibration certificate formats lead side brazed hermetic ADC674A
    Text: COMPONENTS B U R R -B R O W N * [ ADC674A/883B SERIES 1 ADC674ASD/883B ADC674ATD/883B REVISION NONE FEBRUARY, 1989 Microprocessor-Compatible ANALOG-TO-DIGITAL CONVERTER FEATURES • COMPLETE 12-BIT A/D CONVERTER WITH REFERENCE, CLOCK, AND 8-, 12-, OR 16BIT MICROPROCESSOR BUS INTERFACE


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    PDF ADC674A/883B ADC674ASD/883B ADC674ATD/883B 28-PIN 12-BIT 16BIT 74A-TYPE 15jis 150ns 800w power amplifier circuit diagram ANI 1015 ISO calibration certificate formats lead side brazed hermetic ADC674A

    VG46VS8325

    Abstract: ic 3645 sh xaxs
    Text: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)


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    PDF VG46VS8325 100/83MHz 32-bit cycles/16ms 100-pin 1G5-0057 IG5-0057 ic 3645 sh xaxs

    DS1232* watch dog timer

    Abstract: capacitor trip device
    Text: r r u LTC1232 TECHNOLOGY v m Microprocessor Supervisory Circuit F€ATUR€S D € S C M P T IO n • Guaranteed Reset Assertion at Vcc = 1V ■ 8-Pin SOIC Plastic Package ■ 2.0mA Maximum Supply Current ■ 4.62V/4.37V Precision Voltage Monitor ■ Power OK/Reset Time Delay: 600ms


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    PDF LTC1232 600ms DS1232 LTC1232 DS1232* watch dog timer capacitor trip device

    nmc27c512aq

    Abstract: SD112b
    Text: NATL SENICOND {MEMORY} IDE D | b S O H S b OOblSbT fl | p r e l im in a r y NMC27C512AN 524,288-Bit 64k x 8 One Time Programmable CMOS PROM General Description Features The NMC27C512AN is a high-speed 512K UV one time pro­ grammable CMOS EPROM, ideally suited for applications


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    PDF NMC27C512AN NMC27C512AN 288-Bit 28-pin nmc27c512aq SD112b

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip P I C 1 6 C 5 4 A EPROM-Based 8-Bit CMOS Microcontroller FEATURES FIGURE A - PIN CONFIGURATIONS Compatibility PDIP, SOIC, CERDIP Window • Pin and software compatible with PIC16C54 device High-Performance RISC-like CPU • Only 33 single word instructions to learn


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    PDF PIC16C54 200ns DS30207B-page 1D3201 0DDT34T

    6A20n

    Abstract: MOST25
    Text: I 6A20n m o jx DIODE OBIUHE CBEÆEHHH GENERAL /JeMncJiepHbiH ahoa 6^2011 npeflHa3HaneH ajih paÔOTbl B ÔJIOKaX CTpOHHOH pa3BepTKH TejieBH3HOHHbIX npHeMHHKOb c ymoM otkjiohchhsi jiyna KHHecxona AO 110°C. K aToa — oKCHüHkiH icocBeHHoro HaKajia. M acca He 6ojiee 25 r.


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    PDF 6A20n MOST25

    TST02

    Abstract: AES17-1991 93rd AES171991 CS5396 CS5397
    Text: PRODUCT PREVIEW A Cirrus Logic Company _ 120 dB, 96 kH z A udio A /D C onverter Features General Description • 24-Bit Resolution • Complete CMOS Stereo A/D System Delta-Slgma A/D Converters Digital Anti-Alias Filtering S/H Circuitry and Voltage Reference


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    PDF 24-Bit CS5396 CS5397 18-Bit 19-Bit DS229PP1 2S4L324 TST02 AES17-1991 93rd AES171991

    FZJ 101

    Abstract: No abstract text available
    Text: C r C . T U n M C n iü o lio m U IY IO U r a LF155 - LF255 LF156 - LF256 - LF355 - LF356 LF157 - LF357 - LF257 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . HIGH INPUT IMPEDANCE J-FET INPUT STAGE . HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/ns • OFFSET VOLTAGE ADJUST DOES NOT


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    PDF LF155 LF255 LF156 LF256 LF355 LF356 LF157 LF357 LF257 20MHz, FZJ 101

    Untitled

    Abstract: No abstract text available
    Text: KM75C02A CMOS FIFO First-in First-out FIFOj 1024 x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 1024 x 9 organization • Very high speed independent of depth/width — 25ns cycle times • Asynchronous and simultaneous read and write


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    PDF KM75C02A 150mA KM75C02A IDT7202A. 75C02A 32-PIN

    Untitled

    Abstract: No abstract text available
    Text: ¡R samsung * 0 Semiconductor KM75C102A CMOS FIFO WITH PROGRAMMABLE FLAG Preliminary FEATURES DESCRIPTION • Flrst-lrvFlrst-Out Dual Port Memory — 1Kx9 The 75C102A is a 1K x 9 dual port memory that imple­ ments a special First-In-First-Out FIFO algorithm that


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    PDF KM75C102A 75C102A

    jd 1803 IC

    Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
    Text: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-


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    PDF 143HejTHH jd 1803 IC cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64