shinetsu G746 rohs
Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:
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AN-GEN-006-D
shinetsu G746 rohs
shinetsu G746
G746
sirf iii chip
MITSUBISHI APPLICATION NOTE RF POWER
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grm708
Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
grm708
transistor 5024
GRM39
Diode GP 622
diode GP 829
Diode GP 641
diode gp 537
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TRANSISTOR D 1765 320
Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
TRANSISTOR D 1765 320
RF high POWER TRANSISTOR
TRANSISTOR D 1765
marking 929 922
mitsubishi top side marking
1776
ER48
transistor mosfet 4425
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RD20HMF1
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers
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RD20HMF1
900MHz
RD20HMF1
900MHz-band
900MHz
RD20HMFor
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RD02MUS1
Abstract: RD02MUS1-101 T112 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
RD02MUS1-101
T112
3M Touch Systems
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RD30HVF1
Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
100OHM
RD30HVF1-101
rd30hvf
A 1469 mosfet
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RD16HHF1 application notes
Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
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RD16HHF1
30MHz
RD16HHF1
30MHz
RD16HHF1-1or
RD16HHF1 application notes
RD16HHF
RD16HHF1-101
RD 15 hf mitsubishi
10Turns
RD16hh
Rf power transistor mosfet
POWER MOSFET APPLICATION NOTE
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LAL04NA
Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
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RD00HHS1
30MHz
RD00HHS1
30MHz
LAL04NA
T113
mosfet HF amplifier
RD00HHS1-101
3M Touch Systems
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147J
Abstract: 100OHM RD30HUF1
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
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RD30HUF1
520MHz
RD30HUF1
520MHz
RD30HUF1-101
147J
100OHM
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RD01MUS1-101
Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
RD01MUS1-101
fet 547
2779, transistor
RD01MSU1
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RD12MVP1
Abstract: top marking mitsubishi rd series
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power
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RD12MVP1
175MHz,
RD12MVP1
175MHz
175MHz)
top marking mitsubishi rd series
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RD00HVS1
Abstract: RF Transistor s-parameter vhf T113 RD00HVS1-101
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD00HVS1
175MHz
RD00HVS1
175MHz
RF Transistor s-parameter vhf
T113
RD00HVS1-101
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RD01MUS2
Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS2
520MHz
RD01MUS2
520MHz
RD01MUS2-101
GP 839 DIODE
FAN 3792
MOS FET 1127
GP 809 DIODE
IDQ100
01LOT
0703 transistor
3M Touch Systems
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RD70HVF1
Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically
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RD70HVF1
175MHz70W
520MHz
RD70HVF1
RD70HVF1-101
175MHz
520MHz
uhf power transistor 50W
RD70HVF
RD70HVF1-101
High frequency P MOS FET transistor
010PF
071J
RF Transistor Selection
100OHM
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100OHM
Abstract: RD45HMF1
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers
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RD45HMF1
900MHz
RD45HMF1
900MHz-band
900MHz
800-900MHz
RD45HMF1-101
100OHM
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RD60HUF
Abstract: mitsubishi rf 100OHM RD60HUF1 RD60HUF1-101
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.
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RD60HUF1
520MHz
RD60HUF1
520MHz
RD60HUF1-101
RD60HUF
mitsubishi rf
100OHM
RD60HUF1-101
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rd15hvf
Abstract: RD15HVF1 RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
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RD15HVF1
175MHz520MHz
175MHz
520MHz
RD15HVF1
rd15hvf
RD15HVF1-101
RD15HV
rd15h
100OHM
Zo-50o
transistor d1 391
rd15hvf11
zg j9
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RD06HHF1
Abstract: RD06HHF1-101 RD06HHF 10TURNS 40gp0
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
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RD06HHF1
30MHz
30MHz
RD06HHF1
RD06HHF1-or
RD06HHF1-101
RD06HHF
10TURNS
40gp0
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RD06HVF1
Abstract: Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
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RD06HVF1
175MHz
175MHz
RD06HVF1
RD06HVFor
Mitsubishi transistor rf final
100OHM
RD06HVF1-101
transistor 6w
FET P channel
POWER MOSFET APPLICATION NOTE
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RD07MVS1B
Abstract: transistor t06 19 RD07MVS1B-101 RD07MVS1 T112
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in
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RD07MVS1B
175MHz
520MHz
RD07MVS1B-101,
RD07MVS1B
transistor t06 19
RD07MVS1B-101
RD07MVS1
T112
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RD 15 hf mitsubishi
Abstract: RD100HHF1 RD100HHF1-101 MITSUBISHI RF POWER MOS FET rd 100 100w RD100HHF1 rd100hhf hf power transistor mosfet hf amplifier 100w Mitsubishi transistor rf final RD100HH
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
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RD100HHF1
30MHz
RD100HHF1
RD100HHF1-101
RD 15 hf mitsubishi
RD100HHF1-101
MITSUBISHI RF POWER MOS FET rd 100
100w RD100HHF1
rd100hhf
hf power transistor mosfet
hf amplifier 100w
Mitsubishi transistor rf final
RD100HH
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diode gp 434
Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)
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RD07MVS2
175MHz
520MHz
520MHz
175MHz)
520MHz)
diode gp 434
RD07MVS2
diode zener 7.2v
RD07MVS1
T112
318 MARKING DIODE
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RD02MUS1B
Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15
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RD02MUS1B
175MHz
520MHz
RD02MUS1B
RD02MUS1
T112
mosfet 4501
3M Touch Systems
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mitsubishi rf power selection
Abstract: No abstract text available
Text: MITSUBISHI RF POWER DEVICE PRECAUTIONS AND RECOMMENDATIONS GENERAL Mitsubishi RF Power Devices designed for mobile and radio, 9.6V, 7.2V for portable radio. For base bias lead or lead portable radio applications have high reliability and good which performance, as they are designed and manufactured under
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