Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RD06HHF Search Results

    RD06HHF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RD06HHF1 Mitsubishi Silicon MOSFET Power Transistor 30MHz, 6W Original PDF
    RD06HHF1 Mitsubishi Silicon MOSFET Power Transistor 30 MHz, 6 W Original PDF

    RD06HHF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor d 1557

    Abstract: RD06HHF1 transistor 45 f 123 mosfet HF amplifier MITSUBISHI RF POWER MOS FET RF POWER TRANSISTOR 30MHz RD06HHF hf power transistor mosfet j4 92
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 transistor d 1557 transistor 45 f 123 mosfet HF amplifier MITSUBISHI RF POWER MOS FET RF POWER TRANSISTOR 30MHz RD06HHF hf power transistor mosfet j4 92

    MAR 618 transistor

    Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-th MAR 618 transistor MAR 737 transistor d 1557 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231

    IC 30427

    Abstract: IC 30427 M RD06HHF1 transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 IC 30427 IC 30427 M transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v

    RD 15 hf mitsubishi

    Abstract: RD06HHF1-101 RD06HHF
    Text: < Silicon RF Power MOS FET Discrete > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz RD06HHF1 30MHz RD06HHF1-101 Oct2011 RD 15 hf mitsubishi RD06HHF

    RD06HHF1-101

    Abstract: mosfet HF amplifier RD06HHF1 RD 15 hf mitsubishi 10Turns RD06HHF
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 3.6+/-0.2 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-101 mosfet HF amplifier RD 15 hf mitsubishi 10Turns RD06HHF

    RD06HHF1

    Abstract: RD06HHF1-101 RD06HHF 10TURNS 40gp0
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-or RD06HHF1-101 RD06HHF 10TURNS 40gp0

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz RD06HHF1 30MHz

    TRANSISTOR mosfet 9V

    Abstract: RD06HHF1 RD06HVF1 high power FET Transistor transistor 6w MOSFET RF POWER TRANSISTOR VHF
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS TENTATIVE Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DRAWING 12.3MIN APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.


    Original     		PDF RD06HVF1 175MHz 175MHz RD06HVF1 RD06HHF1 TRANSISTOR mosfet 9V RD06HHF1 high power FET Transistor transistor 6w MOSFET RF POWER TRANSISTOR VHF

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original     		PDF CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A