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    Vishay Intertechnologies 15A11B10

    Knobs & Dials 10TURNS REC DIAL 3DIGIT 1/4" SHAFT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 15A11B10 Kit 116 1
    • 1 $57.13
    • 10 $57.13
    • 100 $57.13
    • 1000 $57.13
    • 10000 $57.13
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    Vishay Intertechnologies 11A11B10

    Knobs & Dials 25.4mm 10turns dial 1/4" Chrome Shaft
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 11A11B10 Kit 51 1
    • 1 $47.73
    • 10 $43.64
    • 100 $36.82
    • 1000 $35.46
    • 10000 $35.46
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    Bourns Inc 3400S-1-202L

    Precision Potentiometers 1-13/16"2KOHMS 0.15% WW 10TURNS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 3400S-1-202L Bulk 30 1
    • 1 $142.6
    • 10 $130.78
    • 100 $123.03
    • 1000 $123.03
    • 10000 $123.03
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    Bourns Inc AMM20B5A1CLASL380

    Industrial Motion & Position Sensors 5volts ANALOG SINGLE 10TURNS
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    TTI AMM20B5A1CLASL380 Tray 15 1
    • 1 $45.46
    • 10 $37.89
    • 100 $32.35
    • 1000 $32.35
    • 10000 $32.35
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    Bourns Inc 3400S-1-103L

    Precision Potentiometers 1-13/16"10KOHMS 0.15% WW 10TURNS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 3400S-1-103L Kit 8 1
    • 1 $170.27
    • 10 $148.36
    • 100 $123.04
    • 1000 $123.04
    • 10000 $123.04
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    10TURNS Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 巻線形精密級ポテンショメータ WIRE-WOUND PRECISION POTENTIOMETERS T3540シリーズ •特徴 FEATURES ●３回転から10回転までのラインアップ ●ダイヤル取付け可能 ●Line-up includes products ranging from ３ to 10turns.


    Original     		PDF 10turns. T3540 T3540S 3540S10 10turns 3543S 3545S T3543S

    Untitled

    Abstract: No abstract text available
    Text: 巻線形精密級ポテンショメータ WIRE-WOUND PRECISION POTENTIOMETERS T3540シリーズ •特徴 FEATURES ●３回転から10回転までのラインアップ ●ダイヤル取付け可能 ●Line-up includes products ranging from ３ to 10turns.


    Original     		PDF 10turns. T3540 T3540S 3540S10 10turns 3543S 3545S T3543S

    Untitled

    Abstract: No abstract text available
    Text: 巻線形精密級ポテンショメータ WIRE-WOUND PRECISION POTENTIOMETERS T3540シリーズ •特徴 FEATURES ●３回転から10回転までのラインアップ ●ダイヤル取付け可能 ●Line-up includes products ranging from ３ to 10turns.


    Original     		PDF 10turns. T3540 T3540S 3540S1010turns 3543S 3545S 10turns T3543S T3545S

    10Turns

    Abstract: T3540S AC1000V1 5050K
    Text: 巻線形精密級ポテンショメータ WIRE-WOUND PRECISION POTENTIOMETERS T3540シリーズ •特徴 FEATURES ●３回転から10回転までのラインアップ ●ダイヤル取付け可能 ●Line-up includes products ranging from ３ to 10turns.


    Original     		PDF 10turns. T3540 T3540S 3540S10 10turns 3543S 3545S T3543S T3540S AC1000V1 5050K

    RTD 1185

    Abstract: OP196 OP296 OP496 501u 100A CURRENT SINGLE PHASE bridge rectifier
    Text: Micropower RRIO Operational Amplifiers OP196/OP296/OP496 a FEATURES Rail-to-Rail Input and Output Swing Low Power: 60 ␮A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 ␮V max High Open-Loop Gain: 500 V/mV


    Original     		PDF OP196/OP296/OP496 OP196 OP296 D00312-0-12/10 RTD 1185 OP196 OP296 OP496 501u 100A CURRENT SINGLE PHASE bridge rectifier

    transistor d 1557

    Abstract: RD06HHF1 transistor 45 f 123 mosfet HF amplifier MITSUBISHI RF POWER MOS FET RF POWER TRANSISTOR 30MHz RD06HHF hf power transistor mosfet j4 92
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 transistor d 1557 transistor 45 f 123 mosfet HF amplifier MITSUBISHI RF POWER MOS FET RF POWER TRANSISTOR 30MHz RD06HHF hf power transistor mosfet j4 92

    rtd temperature instrumentation amplifier

    Abstract: rtd temperature instrumentation amplifier circuit 5V power supply using bridge rectifier rtd temperature sensor amplifier rtd circuit of output 5v circuit SY 356 HALF WAVE RECTIFIER CIRCUITS SY 170 PN junction diode data sheet in mil grade 3 phase AC voltage regulator
    Text: a Micropower, Rail-to-Rail Input and Output Operational Amplifiers OP196/OP296/OP496 FEATURES Rail-to-Rail Input and Output Swing Low Power: 60 ␮A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: +3 V to +12 V Low Offset Voltage: 300 ␮V max


    Original     		PDF OP196/OP296/OP496 OP196 14-Lead rtd temperature instrumentation amplifier rtd temperature instrumentation amplifier circuit 5V power supply using bridge rectifier rtd temperature sensor amplifier rtd circuit of output 5v circuit SY 356 HALF WAVE RECTIFIER CIRCUITS SY 170 PN junction diode data sheet in mil grade 3 phase AC voltage regulator

    RD16HHF1 equivalent

    Abstract: RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet RD16HHF1 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1 equivalent RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING

    3590S-491-103

    Abstract: 23n50 13N50
    Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF6G15L-40BRN 3590S-491-103 23n50 13N50

    RTD 1185

    Abstract: OP196 OP296 OP496 50Qn
    Text: a Micropower, Rail-to-Rail Input and Output Operational Amplifiers OP196/OP296/OP496 FEATURES Rail-to-Rail Input and Output Swing Low Power: 60 ␮A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 ␮V max


    Original     		PDF OP196/OP296/OP496 OP196 OP196/OP296/OP496 OP196 OP296 14-Lead SO-14) C00312 RTD 1185 OP496 50Qn

    c1970 transistor

    Abstract: transistor c1970 OP491s d2499 OP291s c1970 OP191/OP291/OP491 sensor OP491 blood pressure circuit schematic c1970 transistor Datasheet
    Text: a Micropower Single-Supply Rail-to-Rail Input/Output Op Amps OP191/OP291/OP491 FEATURES Single-Supply Operation: 2.7 V to 12 V Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 300 µA/Amp Wide Bandwidth: 3 MHz Slew Rate: 0.5 V/µs Low Offset Voltage: 700 µV


    Original     		PDF OP191/OP291/OP491 OP191/OP291/OP491 OP191 14-Lead C1970 c1970 transistor transistor c1970 OP491s d2499 OP291s OP191/OP291/OP491 sensor OP491 blood pressure circuit schematic c1970 transistor Datasheet

    OP295G

    Abstract: OP295 OP495 2n1711 spice model NPN transistor 2n2222 beta value 2N1711 spice 2N2907 PNP Transistor Vaf OP295GP OP295GS OP295GS-REEL
    Text: Dual/Quad Rail-to-Rail Operational Amplifiers OP295/OP495 FEATURES Rail-to-Rail Output Swing Single-Supply Operation: 3 V to 36 V Low Offset Voltage: 300 mV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1,000 V/mV Unity-Gain Stable Low Supply Current/Per Amplifier: 150 ␮A max


    Original     		PDF OP295/OP495 OP295 14-Lead OP295GBC OP495GBC C00331 OP295G OP295 OP495 2n1711 spice model NPN transistor 2n2222 beta value 2N1711 spice 2N2907 PNP Transistor Vaf OP295GP OP295GS OP295GS-REEL

    TB-163

    Abstract: SQ201 10NF 470PF UT34-50
    Text: T B - 1 6 3 S Q 2 0 1 G a i n /E f f i c i e n c y v s F r e q u e n c y ; V d s = 2 8 V d c I d q = . 4 A 16 100 90 80 12 70 60 Gain 8 50 Pout fixed at 4W 40 Efficiency 30 4 20 10 50 100 150 200 250 300 350 400 450 500 550 Freq in MHz TB-163 SQ201 Pout vs Pin Freq=250MHz Vds=28Vdc Idq=400ma


    Original     		PDF TB-163 SQ201 250MHz 28Vdc 400ma 30MHz 10NF 470PF UT34-50

    C637

    Abstract: 522-2422
    Text: E T I Systems Allied Turns Counting Dials Visit ETIÕs Website at www.etisystems.com Combo¨ 3 Ñ 10-Turn Dial/Pot Combination Combination 10-Turn Dial/Pot Model DW22-10 Combo ¨ 3 . Reduce assembly costs by eliminating the time-consuming mounting and calibrating of dial to


    Original     		PDF 10-Turn DW22-10 MW22B-10 DA10L-1/4. DB10L-1/4 DAB10L-1/4 C637 522-2422

    16HHF1

    Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz RD16HHF1 30MHz 16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF

    MAR 618 transistor

    Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-th MAR 618 transistor MAR 737 transistor d 1557 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231

    RD100HHF1

    Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original     		PDF RD100HHF1 30MHz RD100HHF1 30MHz TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w

    RD16HHF1 application notes

    Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1or RD16HHF1 application notes RD16HHF RD16HHF1-101 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE

    IC 30427

    Abstract: IC 30427 M RD06HHF1 transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 IC 30427 IC 30427 M transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v

    a52 zener diode

    Abstract: MAX5012 MAX5012AEPI MAX5012EVKIT BNC connector "reference plane" amplifier j3A
    Text: 19-1286; Rev 0; 6/97 MAX5012 Evaluation Kit • • • • • Power Supplies and Grounding Reference Circuits Latch and Conversion Clocks Digital Input and Controls Analog Output _Applications _Features ♦ Up to 100Msps Conversion Rate


    Original     		PDF MAX5012 100Msps MAX5012EVKIT MAX5012 a52 zener diode MAX5012AEPI MAX5012EVKIT BNC connector "reference plane" amplifier j3A

    0P295

    Abstract: OP295 OP495 CURRENT LOOP transmit Kappa current transformer op295g Voltage to Current Converter dual 4-20mA circuit OP495A MAT03 op
    Text: A N AL OG D E V I C E S ► INC b£E J> m OfilbflDD 0G3öb7b A N A LO G D E V IC E S Eb7 • ANA Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jxV


    OCR Scan     		PDF 0P-295/0P-495 14-Lead 16-Lead 0P295 OP295 OP495 CURRENT LOOP transmit Kappa current transformer op295g Voltage to Current Converter dual 4-20mA circuit OP495A MAT03 op

    F627-8Q1

    Abstract: F627-8-Q1 F-627-8-Q1 DVD120T F627 F6278-Q1
    Text: II/A-<_V|’| H H I INC ÖS D T | S b 4 5 E 0 S 0Q0D4Ö2 4 DVD120T 1 V P o w e r F E T 175 MHz 120 W 80-120 V 10 dB Package Type T FEATURES • ■ ■ ■ ■ ■ ■ No Thermal Runaway Broadband Capability Class A, B, C, D, E Low Noise Figure High Dynamic Range


    OCR Scan     		PDF DVD120T F627-8Q1 F627-8-Q1 F-627-8-Q1 DVD120T F627 F6278-Q1

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    arco 406

    Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF MRF141G MRF141G arco 406 transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations