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Abracon Corporation ASDMB-75.000MHZ-LY-T MEMS OSC XO 75.0000MHZ LVCMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ASDMB-75.000MHZ-LY-T	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.77802 10000 $2.59312	Buy Now
Newark	ASDMB-75.000MHZ-LY-T	Reel			1,000	1 $3.72 10 $3.72 100 $3.72 1000 $3.72 10000 $3.06	Buy Now
Avnet Abacus	ASDMB-75.000MHZ-LY-T	Reel		113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation ASEMB-75.000MHZ-XY-T MEMS OSC XO 75.0000MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ASEMB-75.000MHZ-XY-T	Cut Tape	300		1	1 $3.87 10 $3.337 100 $2.8823 1000 $2.60336 10000 $2.60336	Buy Now
	ASEMB-75.000MHZ-XY-T	Digi-Reel			1	1 $3.87 10 $3.337 100 $2.8823 1000 $2.60336 10000 $2.60336	Buy Now
	ASEMB-75.000MHZ-XY-T	Reel			1,000	1 - 10 - 100 - 1000 $3.15381 10000 $2.94411	Buy Now
Newark	ASEMB-75.000MHZ-XY-T	Reel			1,000	1 $3.7 10 $3.7 100 $3.7 1000 $3.7 10000 $3.05	Buy Now
	ASEMB-75.000MHZ-XY-T	Cut Tape			1,000	1 - 10 - 100 - 1000 $3.52 10000 $3.52	Buy Now
Avnet Abacus	ASEMB-75.000MHZ-XY-T	Reel		113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation ASDMB-75.000MHZ-EC-T MEMS OSC XO 75.0000MHZ LVCMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ASDMB-75.000MHZ-EC-T	Reel			1,000	1 - 10 - 100 - 1000 $2.01951 10000 $2.01951	Buy Now
	ASDMB-75.000MHZ-EC-T	Cut Tape			1	1 $3.14 10 $3.14 100 $3.14 1000 $3.14 10000 $3.14	Buy Now
	ASDMB-75.000MHZ-EC-T	Digi-Reel			1	1 $3.14 10 $3.14 100 $3.14 1000 $3.14 10000 $3.14	Buy Now
Newark	ASDMB-75.000MHZ-EC-T	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.06 10000 $2.06	Buy Now
	ASDMB-75.000MHZ-EC-T	Reel			1,000	1 $2.18 10 $2.18 100 $2.18 1000 $2.18 10000 $1.8	Buy Now
TME	ASDMB-75.000MHZ-EC-T		1,000		1,000	1 - 10 - 100 - 1000 $1.7072 10000 $1.7072	Buy Now
Chip1Stop	ASDMB-75.000MHZ-EC-T		1,000			1 - 10 - 100 - 1000 $1.87 10000 $1.87	Buy Now
Master Electronics	ASDMB-75.000MHZ-EC-T					1 - 10 $2.34 100 $2.05 1000 $1.93 10000 $1.93	Buy Now
Abracon Corporation ASDMB-75.000MHZ-XY-T MEMS OSC XO 75.0000MHZ LVCMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ASDMB-75.000MHZ-XY-T	Cut Tape			1	1 $5.18 10 $5.18 100 $5.18 1000 $5.18 10000 $5.18	Buy Now
	ASDMB-75.000MHZ-XY-T	Reel			1,000	1 - 10 - 100 - 1000 $3.34136 10000 $3.34136	Buy Now
	ASDMB-75.000MHZ-XY-T	Digi-Reel			1	1 $5.18 10 $5.18 100 $5.18 1000 $5.18 10000 $5.18	Buy Now
Newark	ASDMB-75.000MHZ-XY-T	Cut Tape			1,000	1 - 10 - 100 - 1000 $3.76 10000 $3.76	Buy Now
Abracon Corporation ASFLMB-75.000MHZ-LY-T MEMS OSC XO 75.0000MHZ LVCMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ASFLMB-75.000MHZ-LY-T	Cut Tape			1	1 $3.94 10 $3.94 100 $3.94 1000 $3.94 10000 $3.94	Buy Now
	ASFLMB-75.000MHZ-LY-T	Digi-Reel			1	1 $3.94 10 $3.94 100 $3.94 1000 $3.94 10000 $3.94	Buy Now
Avnet Americas	ASFLMB-75.000MHZ-LY-T	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	ASFLMB-75.000MHZ-LY-T	Reel			1,000	1 $2.89 10 $2.89 100 $2.89 1000 $2.89 10000 $2.38	Buy Now

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MB750 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MB-7500		Matra-Harris Semiconductor	MB GATE ARRAY SERIES 2u/2 METAL LAYERS		Scan	PDF

MB750 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HYM581000M Abstract: No abstract text available Text: HYUNDAI ELECTRONICS SIE Mb750flß □ □ □ □ T I S IHYNK 2TG HYM581000 •Ï2YUNDA SEMICONDUCTO D . im 4L-. -. 1\ I X 8-Bit C M O s DRAM MODI 1.1 M431201B-OCT91 DESCRIPTION The HYM581000M is a 1M words by 8bits dynamic RAM module and consists o f eight	OCR Scan	PDF	Mb750flß HYM581000 M431201B-OCT91 HYM581000M HY531000J 22fiF 7777777r/ 4b75Dfl HYM581000
534256 Abstract: IRC20 Text: yundai electronics 51E » Mb750ûfi Q G O O b b B 500 • H Y N K T - 4 ^ 3 - •HYUNDA i 7 HY534256 SEMICONDUCTOI 2-«.k l-liii I M ds \| K\M M 1 8 1 2 0 2 B -JA N 9 2 DESCRIPTION The HY534256 is a high speed, low power 262,144 X4 bit CMOS dynamic random access	OCR Scan	PDF	Mb750 HY534256 T--46-- 534256 IRC20
Untitled Abstract: No abstract text available Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY514100B HY514100B 4b750Ã 000413b 1AC09-10-MAY95 HY514100BJ HY514100BLJ
Untitled Abstract: No abstract text available Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR
Untitled Abstract: No abstract text available Text: • { H Y U N D A HY62V256 Series I 32K X 8-bit CMOS SRAM DESCRIPTION The HV62V256 is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that guarantees	OCR Scan	PDF	HY62V256 HV62V256 55/70/85/100ns 100/120/150ns 1DC03-11-MAY95 HY62V256LP HY62V256LJ
Untitled Abstract: No abstract text available Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY5117100A HY5117100A HY5117100Ato tRASI13) 1RP02) 1AD20-10-MAY94 HY51171OOA HY5117100AJ
Untitled Abstract: No abstract text available Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for	OCR Scan	PDF	HYM581600 HY5116100 HYM581600M/LM/TM/LTM HYM581600TM/LTM 1BD01-00-MAY93 HYM581600M HYM581600LM HYM581600TM
Untitled Abstract: No abstract text available Text: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	PDF	14100A HY514100A HV514100A 1AC06-20-APR93 4b75DÃ HY514100AJ HY514100AU HY514100AT
Untitled Abstract: No abstract text available Text: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY51161 HY5116100Ato 9-10-MAY94 HY5116100A HY5116100AJ HY5116100ASU HY5116100AT HY51161OOASLT HY5116100AR
Untitled Abstract: No abstract text available Text: ^HYUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and	OCR Scan	PDF	HYM564224A 64-bit HY5118164B HYM564224ARG/ATRG/ASLRG/ASLTRG 22SI5 Mb750flfl 1CE16-10-APR96
Untitled Abstract: No abstract text available Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,	OCR Scan	PDF	5C1M40 HY514403B 1AC15-00-MAY94 4b750fi6 HY514403BJ HY514403BU
Untitled Abstract: No abstract text available Text: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	PDF	HY62256B-I 05-11-MAY95 Mb75Dflfi HY62256BLP-I HY62256BLLP-I HY62256BU-I
Untitled Abstract: No abstract text available Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22\|iF decoupling capacitor is mourtted for	OCR Scan	PDF	HYM532220A 32-bit HY5118160B HYM532220AW/SLW/TW/SLTW HYM532220AWG/SLWG 880mW 825mW 70MIN.
Untitled Abstract: No abstract text available Text: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .	OCR Scan	PDF	486/Pentium 7ns/12ns/17ns 67MHz 486/Pent 00DbSS3 1DH02-22-MAY95 HY67V18100/101 HY67V18100C

Untitled Abstract: No abstract text available Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques	OCR Scan	PDF	HY51V16100B 4b750flÃ 1AD43-00-MAY95 QQ04374 HY51V16100BJ HY51V16100BSU
Untitled Abstract: No abstract text available Text: H Y 5 1 4 4 0 0 S e r ie s 1 M x 4-bit C M O S D R A M • • H Y U N D A I DESCRIPTION Hie HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	PDF	HY514400 1AC02-30-MAY94 4b750flfl DG0244T 8700M 9060f7 1AC02-30-M
HY62256A Abstract: hyundai HY62256AJ55 Text: HY62256A Series • H Y U N D A I 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	PDF	HY62256A 55/70/85/100ns HY6264A-I HY62256AP HY62256ALP HY62256ALLP HY62256AJ hyundai HY62256AJ55
Untitled Abstract: No abstract text available Text: u v H u n i a 8Mx8 bit Synchronous DRAM Series m /3 Y U N U A I HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V6S8011/ HY57V658021 PRELIMINARY DESCRIPTION HY57V648010 description and pinout, offering fully synchronous operation. All address, data and control inputs are	OCR Scan	PDF	HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V658011/ HY57V658021 HY57V648010 HY57V648020
LD33 Abstract: ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70 Text: HY6264A Series ‘H YU N D AI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability process coupled with innovative circuit	OCR Scan	PDF	HY6264A 70/85/100/120ns 330mil 1270J 1DB01-11-MAY95 HY6264AP LD33 ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70
HYM5V64414 Abstract: HV51V17404A HYM5V64414AC Text: -HYUNDAI HYM5V64414A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE -with EXTENDED DATA OUT DESCRIPTION TheHYM5V64414A is a 4M x 64-bit EDO m ode CMOS DRAM mod ule consisting of sixteen HY51V17404A in 24/26	OCR Scan	PDF	HYM5V64414A 64-bit HV51V17404A HYM5V64414AKG/ATKG/ASLKG/ASLTKG OOS4CI13> GDDSR31 6-10-APR9S HYM5V64414 HYM5V64414AC
MB-7500 Abstract: 130 nm CMOS standard cell library ST Text: Mrüll electronic June 1992 ASIC HI-REL DATA SHEET MB GATE ARRAY SERIES - 2\U2 METAL LAYERS MB 850 - MB 1300 - MB 2000 - MB 2700 - MB 3200 MB 4000 - MB 5000 - MB 6600 - MB 7500 FEATURES ADVANCED SILICON GATE CMOS PROCESS : - two metal level - 2 micron drawn channel length	OCR Scan	PDF	5flbfl45b MB-7500 130 nm CMOS standard cell library ST
Untitled Abstract: No abstract text available Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling	OCR Scan	PDF	HYM594000B HY5117400 HY514100A 22jiF HYM594000BM/BLM 1BC06-11-MAR94 50fifi
Untitled Abstract: No abstract text available Text: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted	OCR Scan	PDF	HYM536A814B 36-bit HY5117404B HYM536A814BM/BSLM HYM536A814BMG/BSLMG 012SQ171MN 1CF15-10-FEBM
Untitled Abstract: No abstract text available Text: HY234000 Series -H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x8bit. It is fabricated using HYUNDAI’S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are i n	OCR Scan	PDF	HY234000 120ns 525mil HY234000P-XXX HY234000G-XXX

MB750 Search Results

MB750 Price and Stock

Abracon Corporation ASDMB-75.000MHZ-LY-T

Abracon Corporation ASEMB-75.000MHZ-XY-T

Abracon Corporation ASDMB-75.000MHZ-EC-T

Abracon Corporation ASDMB-75.000MHZ-XY-T

Abracon Corporation ASFLMB-75.000MHZ-LY-T

MB750 Datasheets (1)

MB750 Datasheets Context Search

HYM581000M

534256

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HY62256A

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LD33

HYM5V64414

MB-7500

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