HY57V658020B

Abstract: HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I
Contextual Info: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V658020B is organized as 4banks of 2,097,152x8.

Contextual Info: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.

HY57V6580208

Abstract: 21M22 HY57V6580208TC Y57V658020BTC-7I
Contextual Info: HY57V658020BTC-I 8Mx8-bit. 4K Ref., 4Banks, 3.3V D E S C R I PT I O N Th e H y n ix H Y 5 7 V 6 5 8 0 2 0 B is a 6 7 , 1 0 6 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , id e a l l y s u i te d f o r th e M o b i le a p p l i c a t i o n s w h ic h r e q u i r e lo w

3clk

Abstract: HY57V658020B HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I
Contextual Info: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V658020B is organized as 4banks of 2,097,152x8.

Contextual Info: u v H u n i a 8Mx8 bit Synchronous DRAM Series m /3 Y U N U A I HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V6S8011/ HY57V658021 PRELIMINARY DESCRIPTION HY57V648010 description and pinout, offering fully synchronous operation. All address, data and control inputs are

HY57V658020TC-10

Abstract: hy57v HY57V658020 HY57V658020TC-12
Contextual Info: HY57V658020 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020 is organized as 4banks of

HY57V658020BTC-10S

Abstract: HY57V658020BTC10P HY57V658020B HY57V658020BLTC-10P HY57V658020BLTC-10S HY57V658020BLTC-75 HY57V658020BLTC-8 HY57V658020BTC-10 HY57V658020BTC-10P HY57V658020BTC-75
Contextual Info: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.

HY57V658020ATC-10

Abstract: HY57V658020A
Contextual Info: -M Y U N D H I - - • HY57V658020A 4 Banks x 2 M x 8BI1 Synchronous DRAM DESCRIPTION The Hyundai HY57V658020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited lor the main memory applications which require large memory density and high bandwidth. HY57V658020A Is organized as 4banks of

Contextual Info: HY57V658020BTC 8Mx8-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.

Contextual Info: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of

Contextual Info: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.

Contextual Info: HY57V658020B 0.1 : Hynix Change 32Mx64bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32655HCT8M Series DESCRIPTION The Hynix HYM71V32655HCT8M Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen

HY57v658020A

Abstract: HY57V658020A-TC-10S hy57v658020atc-10s HY57V658020ATC-10
Contextual Info: HY57V658020A 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020A is organized as 4banks of

Contextual Info: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.

HY57V648010

Abstract: HY57V648011 HY57V648020 HY57V648021 HY57V658010 HY57V658011 HY57V658020
Contextual Info: u v i i u i i i • 8Mx8 bit Synchronous DRAM Series I J N D f l I HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 _HY57V648011/ HY57V648021/ HY57V658011/ HY57V658021 PRELIMINARY DESCRIPTION HY57V648010 4Mbit x 2bank x 8 I/O, LVTTL

Contextual Info: - # HY57V658020 -H Y U N D A I 4 Banks x 2M x SBit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020 is a 6 7 ,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. HY57V658020 is organized as 4banks of

Contextual Info: 8Mx64 bit SDRAM Unbuffered DIMM F-Series PC/100 SDRAM Specification Supporting based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V65800A/ HYM7V65801A/ HYM7V65830A/ HYM7V65A DESCRIPTION The HYM7V65800A/ 65801A/ 65830A/ 65831A F-Series are high speed 3.3-Volt synchronous dynamic

4mx16

Abstract: HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Num bering 9 SDRAM M odule Part Num bering 11 3. DATA SHEETS SDRAM 16M -bit SDRAM HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, 4K Ref., 2Banks, 3.3V 1 M x16-bit, 4K Ref., 2Banks, 3.3V, ET_Part

intel 830

Contextual Info: 8Mx72 bit SDRAM “Intel” Registered DIMM H-Series with PLL & PC/100 SDRAM Specification Supporting based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS800A/ HYM7V75AS801A/ HYM7V75AS830A/ HYM7V75AS831A DESCRIPTION The HYM7V75AS800A/ 75AS801A/ 75AS830A/ 75AS831A H-Series are high speed 3.3-Volt

KM48S8030BT-GL

Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.

1gb pc133 SDRAM DIMM 144pin

Abstract: 54-PIN PC100 gm72v66841
Contextual Info: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh

hy57v168010a

Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
Contextual Info: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.

hy57v168010b

Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Contextual Info: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x

Contextual Info: "H Y U N D A I V * 16MX72 BIT SDRAM UNBUFFERED DIMM F-SERIES ✓ PC/100 SDRAM Specification Supporting based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K /8K Refresh HYM7V75A1600A/ HYM7V75A1601 A/ HYM7V75A1830A/ HYM7V75A1631A DESCRIPTION The HYM7V75A1600A/ 75A1601 A/ 75A1630A/ 75A1631A F-Series are high speed 3.3-Volt synchronous