Untitled
Abstract: No abstract text available
Text: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY62256B-I
05-11-MAY95
Mb75Dflfi
HY62256BLP-I
HY62256BLLP-I
HY62256BU-I
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM584000B Series SEMICONDUCTOR 4M xS-blt CMOS DRAM MODULE PRELIM IN ARY DESCRIPTION The HYM584000B is a 4M x 8-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22 iF decoupling capacitors are mounted under each DRAMs.
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HYM584000B
HY5117400
HYM584000BM/BLM
4b750flfl
00Qlfl40
C05-00-MAY93
1BC05-00-
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 638100 128KX 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni
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128KX
HY638100
15/17/20/25ns
10G01
-11-MAY94
4b750flfl
400mil
1DG01-11-MAY94
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM540100 Series 1M x 40-bit C M O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM540100 is a 1M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY514400A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22/uF decoupling capacitor is mounted for each DRAM.
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HYM540100
40-bit
HY514400A
22/uF
HYM540100M/LM
HYM540100MG/LMG
0002G7fl
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