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    LVE21050R Price and Stock

    Philips Semiconductors LVE21050RN

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    LVE21050R Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LVE21050R Philips Semiconductors NPN Microwave Power Transistor Original PDF
    LVE21050R Philips Semiconductors Microwave Linear Power Transistor Original PDF
    LVE21050R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    LVE21050R Philips Semiconductors NPN microwave power transistor Scan PDF

    LVE21050R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BP317

    Abstract: LVE21050R
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistor LVE21050R FEATURES PINNING - SOT445A • Diffused emitter ballasting resistors provide excellent


    Original
    PDF LVE21050R OT445A SCA53 127147/00/02/pp8 BP317 LVE21050R

    PCF7931AS

    Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
    Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


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    PDF 87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    Philips TdA3619

    Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
    Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE ObE D • ^ 5 3 1 3 1 0014^45 7 ■ LKE21050T MAINTENANCE TYPE for new design use LVE21050R T -3 1 ~ 0 7 MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.


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    PDF LKE21050T LVE21050R)

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LVE21050R PINNING - SOT445A FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN DESCRIPTION 1 • Self-aligned process entirely ion implanted


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    PDF OT445A LVE21050R

    LVE21050R

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE QbE D m bbS3T31 0015015 D EV ELO P M EN T DATA LVE21050R T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. T-2i-oy M ICR O W A VE LINEAR POW ER T R A N SIST O R NPN silicon transistor for use in common-emitter class-A linear power amplifier up to 4,2 GHz,


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    PDF bbS3T31 LVE21050R FO-83) VCB-40V r-33-07 LVE21050R

    LVE21050R

    Abstract: SC15
    Text: DISCRETE SEMICONDUCTORS LVE21050R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Semiconductors This Material Copyrighted By Its Respective Manufacturer 1997 Feb 14 PHILIPS


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    PDF LVE21050R LVE21050R SC15

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE QbE D tbS3T31 0015015 0 • DEVELOPMENT DATA LVE21050R This data sheet contains advance information and specifications are subject to change without notice. J V T -3 3 -0 7 MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor for use in common-emitter class-A linear power amplifier up to 4,2 GHz.


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    PDF tbS3T31 LVE21050R FO-83)

    RTC190

    Abstract: LKE21050T LVE21050R
    Text: N AMER Df aE PH ILIP S /D IS C R E TE D • b b SBT31 0014145 MAINTENANCE TYPE 7 ■ LKE21050T for new design use LVE21050R MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry and gold sandwich


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    PDF LVE21050R) 0Q1414S LKE21050T RTC190 LKE21050T LVE21050R

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    Philips Semiconductors Selection Guide

    Abstract: LTE42005S BLS2731-10
    Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR


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    PDF RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Microwave transistors RF & MICROWAVE SEMICONDUCTORS & MODULES CONTINUOUS POWER TYPES f ^CE *C P r L1 ^ Gp° 3 GHz) (V) (mA) (mW) (dB) 1 2 2 2 2.1 2.1 2.1 2.3 2.3 4 4 4.2 4.2 4.2 20 18


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    PDF LEE1015TA LBE2003S LBE2009S LCE2009S LTE21009R LTE21015R LTE21025R LWE2010S LWE2015R LAE4001R

    LTE-3201

    Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S
    Text: N AMER P HILIPS/DISCRETE SSE D • t.bS3T31 D01fc,E32 S ■ T - 5 3-0/ 54 Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. f PACKAGE OUTLINE GHzv Vce m : ic (mAX - Gpo - ' ' P L l'” . (W (dB) CLASS A, MEDIUM POWER LAË6000Q LBE2003S


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    PDF bS3T31 D01fc 6000Q OT-100 LBE2003S FO-45 LCE2003S FO-46 LBE2009S LTE-3201 FO-163 lte4002s LCE2009S LTE21009R LUE2009S

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S


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    PDF btiS3131 LAE6000Q LBE2003S LCE2003S LBE2009S LCE2009S LUE2003S LUE2009S OT-100 FO-45

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


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    PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    FO-229

    Abstract: No abstract text available
    Text: 69 RF/Microwave Devices Microwave Transistors, Continuous Power cont. Type No Package Outline ' f " (GHz) (V| PL1"> (W) Gpo<2) (dB) CLASS A, MEDIUM POWER (cont.) LA E4001R LA E4 002 S LTE4002S LTE42005S LTE42008R LTE42012R 4.0 4.0 4.0 4.2 4.2 4.2 15 18 18


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    PDF E4001R LTE4002S LTE42005S LTE42008R LTE42012R T-100 FO-41B FO-229