Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LSD1130 Search Results

    LSD1130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT 23 1ft

    Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
    Text: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*


    OCR Scan     		PDF N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 OT-23 SOT 23 1ft 2N5484 2NS484 1Ft SOT23 transconductance 2N5485 2N5486 MMBF5486

    1n9148

    Abstract: IR diode D4-D4 1N3064 1N4148 1N4149 1N4150 1N914 1N914A 1N914B 1N916
    Text: Switching Diodes Computer Diodes Glass Package V R RM Device No. Package No. (V) R (nA) C V @ R <V> Max @ Ja) <PF> (ns) Max Max Test Cond. Process No. Min . Max (V> 1N914 DO-35 100 25 5000 20 75 1 10 4 4 (Note 2) D3 1N914A DO-35 100 25 5000 20 75 1 20 4


    OCR Scan     		PDF 1N914 DO-35 1N914A 1N914B 1N916 1N916A 1n9148 IR diode D4-D4 1N3064 1N4148 1N4149 1N4150

    027Q

    Abstract: NDS336P
    Text: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS336P --125-C LSD1130 027Q

    ksd113

    Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
    Text: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100


    OCR Scan     		PDF bS01130 D0B70fll NSD206 O-202 NSDU56 NSDU57 ksd113 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92

    NDP506BL

    Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL
    Text: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using


    OCR Scan     		PDF NDP506AL NDP506BL NDB506AL NDB506BL S01130 0GM0215 bSD1130 Zener diode DW NDP506A NDB506BL

    TN3440A

    Abstract: No abstract text available
    Text: S e m i c o n d u c t o r TN3440A & D iscrete P O W ER & S ig n a l T echnologies . National T N 3440A NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se in h o rizo n tal driver, c la s s A off-line a m p lifier an d off-line sw itching a pp licatio ns. S o u rc e d from P ro c e s s 36.


    OCR Scan     		PDF TN3440A LSD1130 0Q40bm O-226 L50113D D01DL42 TN3440A

    d4sh8

    Abstract: D45H8 NZT45H8 k200g
    Text: D45H8 I NZT45H8 ' N a t i on a I Discrete POWER & Signal Technologies S e m i c o n d u c t o r " D45H8 NZT45H8 SOT-223 TO-220 B PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.


    OCR Scan     		PDF D45H8 NZT45H8 O-220 OT-223 LSD1130 d4sh8 NZT45H8 k200g

    FJT1

    Abstract: FJT1100 1N456A FJT1102
    Text: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A


    OCR Scan     		PDF 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A FDH300 DO-35 FJT1 FJT1100 FJT1102

    NZT751

    Abstract: No abstract text available
    Text: NZT751 Diserete POWER & Signal Technologies u c t o r " NZT751 E B SOT-223 PNP Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. Absolute Maximum Ratings*


    OCR Scan     		PDF NZT751 OT-223 b5011i3G NZT751

    NDS9410 equivalent

    Abstract: NDS9410
    Text: National ÆlÆ Semiconductor November 1993 NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology. This


    OCR Scan     		PDF NDS9410 LSD1130 bSD113D NDS9410 equivalent NDS9410

    BSS123

    Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
    Text: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: k501130 BSS123 bS0113D 85S100 TRANSISTOR BSS123 K5011

    LD 1106 BS

    Abstract: NDS8426
    Text: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.


    OCR Scan     		PDF NDS8426 RDS10N, bSG1130 LD 1106 BS NDS8426