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    NDT451AN

    Abstract: u1130
    Text: July 1996 National Semiconductor" N D T451AN N-Channel Enhancement Mode Field Effect Transistor F e a tu re s G e n e ra l D e s c rip tio n These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology,


    OCR Scan     		PDF NDT451AN OT-223 bSQ1130 NDT451AN u1130

    NDB4050L

    Abstract: NDP4050L
    Text: National A p r il 1 9 9 6 Semiconductor~ * NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These Features lo g ic level N-Channel enhancem ent m ode • 15A, 50V. RDSI0NI = 0.1Q @ V GS = 5V tran sisto rs are produced using


    OCR Scan     		PDF NDP4050L NDB4050L hSD1130 bS01130 004D233

    tls74

    Abstract: TIS74 3tb 40 TIS73
    Text: Discrete POWER & Signal Technologies Semiconductor“ TIS73 TIS74 N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 54. Absolute Maximum R3tInCJS


    OCR Scan     		PDF TIS73 TIS74 LSD1130 tls74 TIS74 3tb 40