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    K501130 Search Results

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    K501130 Price and Stock

    On-Shore Technology Inc OSTYK50113030

    CONN BARRIER STRP 13CIRC 0.374"
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    DigiKey OSTYK50113030 Bulk 15
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    Anytek Technology Corporation Ltd YK5011303000G

    CONN BARRIER STRP 13CIRC 0.374"
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    DigiKey YK5011303000G Bulk 2,020
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    Interstate Connecting Components YK5011303000G
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    Amphenol Corporation YK50113030J0G

    YK50113030J0G-950 TB BARRIER - Bulk (Alt: YK5011303000G)
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    Avnet Americas YK50113030J0G Bulk 2,020
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    Amphenol Corporation YK5011303000G

    Barrier Terminal Blocks 950 TB BARRIER
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    Mouser Electronics YK5011303000G
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    Anytek Technology Corporation Ltd YK50113030J0G

    Yk- 501-13P Black ; "-/+" Combination Type Ni-Plated Contact Tin-Plated W/O Flange&w/O Cover "@" Mark |Amphenol Anytek YK50113030J0G
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    Newark YK50113030J0G Bulk 2,020
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    Interstate Connecting Components YK50113030J0G
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    K501130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5902

    Abstract: No abstract text available
    Text: N-Channel JFETs Ultra Low Leakage Dual JFETs Operating Conditions fo r these Characteristics By Its Caso Style 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N590S 2N5909 Op. Cond. Iq H G 2 >D <I*A VqS I-2 Vos mV) Max AVgs Drift (ftV /T ) Max •o (PA) Max 10


    OCR Scan     		PDF tSD113D DD3710Ã 2N5902

    BSS123

    Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
    Text: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: k501130 BSS123 bS0113D 85S100 TRANSISTOR BSS123 K5011