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    1N4150 Price and Stock

    Vishay Semiconductors 1N4150W-E3-18

    DIODE GEN PURP 50V 200MA SOD123
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    DigiKey 1N4150W-E3-18 Reel 30,000 10,000
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    1N4150W-E3-18 Cut Tape 18,500 1
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    • 10 $0.173
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    New Advantage Corporation 1N4150W-E3-18 20,000 1
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    Vishay Semiconductors 1N4150W-HE3-08

    DIODE GEN PURP 50V 200MA SOD123
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    DigiKey 1N4150W-HE3-08 Reel 24,000 3,000
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    1N4150W-HE3-08 Cut Tape 2,170 1
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    Diotec Semiconductor AG 1N4150

    DIODE GEN PURP 50V 0.3A DO35
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    DigiKey 1N4150 Ammo Pack 15,000 5,000
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    1N4150 Cut Tape 4,720 1
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    Mouser Electronics 1N4150 13,323
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    Onlinecomponents.com 1N4150
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    TME 1N4150 3,000 25
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    Vishay Semiconductors 1N4150W-G3-18

    DIODE GEN PURP 50V 200MA SOD123
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    DigiKey 1N4150W-G3-18 Cut Tape 9,968 1
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    Central Semiconductor Corp 1N4150 TR PBFREE

    DIODE GEN PURP 50V 200MA DO35
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    DigiKey 1N4150 TR PBFREE Cut Tape 6,321 1
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    Avnet Americas 1N4150 TR PBFREE Reel 10,000
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    Mouser Electronics 1N4150 TR PBFREE 17,737
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    Find more 1N4150 price and stock on Findchips.com

    1N4150 Datasheets (147)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N4150 Chenyi Electronics SMALL SIGNAL SWITCHING DIODE Original PDF
    1N4150 Compensated Devices SWITCHING DIODES Original PDF
    1N4150 DC Components TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES Original PDF
    1N4150 Diodes DIODE SWITCHING DIODE 50V 0.2A 2DO-35 Original PDF
    1N4150 Diodes FAST SWITCHING DIODE Original PDF
    1N4150 Diodes Short Form Selection Guide Original PDF
    1N4150 Diotec Small Signal Si-Diodes Original PDF
    1N4150 EIC Semiconductor High Speed Switching Diodes Original PDF
    1N4150 Fairchild Semiconductor High Conductance Ultra Fast Diode Original PDF
    1N4150 Galaxy Semi-Conductor Holdings SMALL SIGNAL SWITCHING DIODE Original PDF
    1N4150 General Semiconductor SMALL SIGNAL DIODE Original PDF
    1N4150 General Semiconductor Small Signal Diodes Original PDF
    1N4150 Good-Ark SILICON EPITAXIAL PLANAR DIODES Original PDF
    1N4150 HY Electronic HIGH-SPEED SWITCHING DIODE Original PDF
    1N4150 Lite-On Technology FAST SWITCHING DIODE Original PDF
    1N4150 Micro Commercial Components DIODE ULTRA FAST RECOVERY RECTIFIER 50V 0.2A 2DO-35 Original PDF
    1N4150 Microsemi Silicon Switching Diode Original PDF
    1N4150 Microsemi Silicon Switching Diode Original PDF
    1N4150 Microsemi Signal or Computer Diode Original PDF
    1N4150 Philips Semiconductors High-speed diodes Original PDF
    ...

    1N4150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C


    Original     		PDF 1N4150, 1N4150-1 1N3600 MIL-PRF-19500/231

    Untitled

    Abstract: No abstract text available
    Text: 1N4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: For definitions of compliance please see


    Original     		PDF 1N4150 AEC-Q101 DO-35 TR/10K 50K/box TAP/10K 50K/box 1N4150 1N4150-TR 1N4150-TAP

    Untitled

    Abstract: No abstract text available
    Text: Diodes High–speed switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ✻This product is available only outside of Japan. FJEDEC Standard Product The following 1N series diodes are available to support the JEDEC standard. FExternal dimensions Units: mm FAbsolute maximum ratings (Ta = 25°C)


    Original     		PDF 1N4148 1N4150 1N4448 1N914B 1N4148/1N4150/1N4448/1N914B

    Untitled

    Abstract: No abstract text available
    Text: 1N4150W Small-Signal Diode SOD-123 .022 0.55 Mounting Pad Layout Top View 0.094 (2.40) 0.055 (1.40) 0.055 (1.40) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Band .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40) .004 (0.1) max. Dimensions in inches


    Original     		PDF 1N4150W OD-123 OD-123 D3/10K 30K/box 30K/box DO-35 1N4150, t4150. 200mA

    DIODE WITH SOD CASE

    Abstract: DIODE MARK 35 max 083 1N4150 1N4150W LL4150
    Text: 1N4150 Small Signal Diodes FEATURES ♦ Silicon Epitaxial Planar Diode min. 1.083 27.5 ♦ For general purpose and switching. max. ∅.079 (2.0) ♦ This diode is also available in other Cathode Mark min. 1.083 (27.5) max. .150 (3.8) DO-35 case styles including: the SOD-123 case


    Original     		PDF 1N4150 DO-35 OD-123 1N4150W LL4150. DO-35 DIODE WITH SOD CASE DIODE MARK 35 max 083 1N4150 LL4150

    fairchild 1n4150

    Abstract: FAIRCHILD DIODE ultra fast diode 1N4150
    Text: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.


    Original     		PDF 1N4150 FDLL4150 FDLL4150 LL-34 DO-35 MMBD1201-1205 DO-35-2 fairchild 1n4150 FAIRCHILD DIODE ultra fast diode

    1N4150

    Abstract: MM4150 Rectron Semiconductor glass mini melf diode
    Text: RECTRON SEMICONDUCTOR MM4150 TECHNICAL SPECIFICATION 1N4150 mini-MELF SIGNAL DIODE Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Reverse Voltage VR 50 Reverse Recovery trr 4 Time Power Dissipation Ptot 500 Forward Current Junction Temp. Storage Temp.


    Original     		PDF MM4150 1N4150 100uA 200mA MM4150 Rectron Semiconductor glass mini melf diode

    1N4150

    Abstract: 1N4150-TAP 1N4150-TR DO35 1n4150 vishay
    Text: 1N4150 Vishay Semiconductors Small Signal Fast Switching Diodes Features • • • • • Silicon Epitaxial Planar Diode Low forward voltage drop e2 High forward current capability Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF 1N4150 2002/95/EC 2002/96/EC TR/10 TAP/10 1N4150-TR 1N4150-TAP 08-Apr-05 1N4150 1N4150-TAP DO35 1n4150 vishay

    general semiconductor DIODE SOD80

    Abstract: melf diode color code
    Text: LS4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Electrical data identical with the device e2 1N4150 • Quadro MELF package • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original     		PDF LS4150 1N4150 2002/95/EC 2002/96/EC GS18/10 GS08/2 LS4150 LS4150-GS18 LS4150-GS08 08-Apr-05 general semiconductor DIODE SOD80 melf diode color code

    00 marking SOD-123

    Abstract: A4 marking diode Code sod-123 on semiconductor diode marking a4 marking a4 1N4150 1N4150W LL4150 A4 marking diode SOD 123 sod-123 DIODE marking code D3
    Text: 1N4150W Small Signal Diode SOD-123 .022 0.55 Pad Layout SOD-123 Top View 0.094 (2.40) 0.055 (1.40) 0.055 (1.40) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Band .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40) .004 (0.1) max. Dimensions in inches


    Original     		PDF 1N4150W OD-123 OD-123 D3/10K DO-35 1N4150, 00 marking SOD-123 A4 marking diode Code sod-123 on semiconductor diode marking a4 marking a4 1N4150 1N4150W LL4150 A4 marking diode SOD 123 sod-123 DIODE marking code D3

    in3600

    Abstract: IN4150 1N3600 MIL-PRF-19500/231 1N4150 1N4150-1 D0-35
    Text: • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N4150 and 1N4150-1 and 1N3600 • DOUBLE PLUG CONSTRUCTION


    Original     		PDF 1N4150-1 MIL-PRF-19500/231 1N3600 1N4150 1N4150-1 1N3600 1N4150 IN4150, in3600 IN4150 MIL-PRF-19500/231 D0-35

    Switching diode 50V 200mA

    Abstract: 1N4150
    Text: 1N4150 SILICON EPITAXIAL PLANAR DIODE Features • Fast Switching Speed • High Reliability • High Conductance • For General Purpose Switching Applications Mechanical Data • Terminals: Solderable per MIL-STD-202, • Method 208 • Marking: Type Number


    Original     		PDF 1N4150 MIL-STD-202, 200mA 200mA, Switching diode 50V 200mA 1N4150

    Untitled

    Abstract: No abstract text available
    Text: 1N4150 Small Signal Switching Diodes VOLTAGE RANGE: 50 V CURRENT: 150 m A DO - 35 Features ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation Mechanical Data ◇ Case: DO-35,glass case ◇ Polarity: Color band denotes cathode


    Original     		PDF 1N4150 DO-35 100mA 200mA 10to100mA)

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diodes 1N4150UR, 1N4150UR-1 & 1N3600UR Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65 °C to +175 °C


    Original     		PDF 1N4150UR, 1N4150UR-1 1N3600UR MIL-PRF-19500/231

    1n3600

    Abstract: 1N4150 1n3600 chip
    Text: P O M P I JTFR DIODF W I T ,r u 1 L/IV7t/U 200rnA Low Power, Switching 1N3600; JAN, JANTX & JANTXV I N 3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • This series of switching diodes is useful in many computer sw itching applications, for


    OCR Scan     		PDF 200rnA 1N3600; 1N4150; 1N4150 1N4150-1 MIL-S-19500/231 DO-35 Cur70 1n3600 1n3600 chip

    1N4148.1N4448

    Abstract: BYV37-BYV38 byg20
    Text: Temic Semiconductors Selector Guide - Alphanumeric Index 1N4148.1N4448 1N4150 1N4151 1N4154 1N4728A.1N4761A 1N5221B.1N5267B 1N5417.1N5418 BA1282.BA1283 BA282.BA283 BA479G.BA479S BA604 BA679.BA679S BA682.BA683 BA779.BA779S BA779 - 2 BA979.BA979S BA982.BA983


    OCR Scan     		PDF 1N4148 1N4448 1N4150 1N4151 1N4154 1N4728A. 1N4761A 1N5221B. 1N5267B 1N5417 1N4148.1N4448 BYV37-BYV38 byg20

    Untitled

    Abstract: No abstract text available
    Text: 1N4150_ Vishay Telefun ken Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings


    OCR Scan     		PDF 1N4150_ 01-Apr-99

    Untitled

    Abstract: No abstract text available
    Text: VfSMAY _ LS4150 ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4150 • Q uadra M elf package Applications High speed sw itch and general purpose use in co m ­


    OCR Scan     		PDF LS4150 1N4150 D-74025 01-Apr-99

    1N3600

    Abstract: 1N4150 1N4150-1 JTXV1N3600
    Text: COMPUTER DIODE JAN, JANTX & JANTXV 1N3600 JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 200mA Low Power, Switching FEATURES DESCRIPTION • • • • • This series of switching diodes is useful in many computer sw itching applications, for both m ilitary and comm ercial systems.


    OCR Scan     		PDF 200mA 1N3600 1N4150 1N4150-1 MIL-S-19500/231 DO-35 1N4150-1 JTXV1N3600

    DSAIH0002550

    Abstract: No abstract text available
    Text: Square ended SMD Fvv Silicon switching diodes 1N6638US 1N6642US 1N6643US Applications High Rel. Voidless MELF "D" General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power types like 1N4148UR-1 and 1N4150UR-1.


    OCR Scan     		PDF 1N6638US 1N6642US 1N6643US 1N4148UR-1 1N4150UR-1. L-S-19500 DSAIH0002550

    Untitled

    Abstract: No abstract text available
    Text: wmmt ▼ LS4150 _ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4150 • Quadra Melt package Applications High speed switch and general purpose use in com­ puter and industrial applications


    OCR Scan     		PDF LS4150 1N4150 01-Apr-99

    in4151

    Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
    Text: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.


    OCR Scan     		PDF bb53131 1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4153 diode 1N4150 1N4151 1N4153 IEC134

    Diode 1N4150

    Abstract: BY100 JR100 marking 1n3 diode R-1 ROHM 1N3600
    Text: • DOOfiTbD 2bl ■ R H M ROHVn 1N4150/1N3600 DIODE ROHM STANDARD ABSOLUTE MAXIMUM RATINGS: Ta=25’C Peak Reverse Voltage Reverse Voltage DC Peak Forward Current Forward Current DC Peak Forward Surge Current Total Power Dissipation Junction Temperature


    OCR Scan     		PDF 1N4150/1N3600 Tas25 RL-100Ã Diode 1N4150 BY100 JR100 marking 1n3 diode R-1 ROHM 1N3600

    1N4150

    Abstract: No abstract text available
    Text: tfiBS 1N4150 FAST SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • Ideal for Fast Logic Applications Ultra Fast Switching High Reliability I Mechanical Data_ • • • • • DO-35 Case: DO-35, Plastic Leads: Solderable per M IL-STD-202,


    OCR Scan     		PDF 1N4150 DO-35, MIL-STD-202, DO-35 1N4150 200mA, DS12018