1N457 Search Results

fjt1101

Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
Contextual Info: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125

Contextual Info: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) ("A) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200

1n457a equivalent

Abstract: BAV45 diode pico-amp low-leakage silicon diode 1N3595 1N457A 1N459A 1N485B 1N6263 CDH300
Contextual Info: Silicon Diodes DO-35 Case Continued Low Leakage Diodes TYPE NO. 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 VRRM (V) MAX 70 200 200 150 150 150 IO (mA) MAX 200 200 200 150 200 200 VF (V) MAX 1.0 1.0 1.0 1.0 1.0 1.05 @ IF (mA) 100 100 100 200 200 200 IR @ VR

Contextual Info: Silicon Diodes DO-35 Case £3 Low Leakage Diodes lo Vf @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200 1.0

Contextual Info: 1N457AM Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage70 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)

1n456

Abstract: 25nA 1N458 1N457
Contextual Info: DIODE 1N456 1N457; JAN 1N457 1N458; JAN 1N458 1N459; JAN 1N459 Low Current FEATURES • Metallurgical Bond • Qualified to MIL-S-1950W193 • Planar Passivated Chip • DO-7 Package DESCRIPTION General purpose low current diode with high reliability characteristics

1n457

Abstract: n456a DSAIH00025333 1N456A
Contextual Info: B K C INTERNATIONAL □ 3E D I 117^^03 □□□□275 2 7 - - Ó / - Ó LOW LEAKAGE DIODES 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ WIV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature

equivalent diode for 1n457

Contextual Info: 1N457A thru 1N459A Qualified Level: JAN Switching Diode Available on commercial versions Qualified per MIL-PRF-19500/193 DESCRIPTION These popular 1N457 – 1N459 series of JEDEC registered switching/signal diodes are metallurgically bonded. These small low capacitance diodes with very fast switching speeds

LL-35 MELF SMD

Abstract: 1N4150 1N457A 1N41501N457A
Contextual Info: Silicon Switching Diode DO-35 Glass Package 1N4150 1N457A Applications Used in general purpose applications,where a controlled forward characteristic is important. D O -35 G lass P ack age Features Lead Dia. 0.018-0.022" 0.458-0.558 mm Six sigma quality BKC's Sigma Bond plating

ALL4150

Abstract: 1N4606
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

1N457

Contextual Info: 1N457 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N457 Availability Online Store Diodes

1N457

Abstract: 1N SERIES DIODE
Contextual Info: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg

diode IN457

Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
Contextual Info: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September

1N456A

Abstract: 1N457 1N459a N457 1N456 1N457A 1N458 1N458A 1N459 low leakage diodes
Contextual Info: B K C INTERN ATI ONA L □ 3E LOW LEAKAGE DIODES D I 117^^03 □□□□275 5 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ W IV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature

1n457

Contextual Info: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg

equivalent diode for 1n457

Abstract: 1N457 1N457 equivalent 1N457A JAN1N457 marking blue
Contextual Info: FEATURES 1N457 • • • • • 1N457 AVAILABLE AS 1N457A, & AS 1N457 PER MIL-PRF-19500/193 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine, 8.3mS:

DIODE 1N746a JX

Abstract: JS j 1N6677-1
Contextual Info: PRODUCT LISTING ALL PRODUCTS Page Number 1N746 thru 1N759A . Page Number 9 1N4565A-1 thru 1N4574A-1 . J, JX, JV, JS. 29 1N746A thru 1N759A . .JANHC, JANKC. 129 1N4565AUR-1 thru 1N4584AUR-1 .J, JX, JV, J S . 85 1N4614 thru 1N4627 . .

FJT1

Abstract: FJT1100 1N456A FJT1102
Contextual Info: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A

1n35

Contextual Info: Silicon D iodes DO-35 Case Low Leakage Diodes TYPE NO. •o VF @ IF IR V r Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200

Contextual Info: 1N457A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage70 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)

Contextual Info: 1N4571A+JAN Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage6.4 @I(Z) (A) (Test Condition)1.0m Tolerance (%)5.0 P(D) Max. (W)400m¥ Z(z) Max. (ê) Dyn. Imped.100 Temp Coef pp/10k0.5 Maximum Operating Temp (øC)175

Contextual Info: 1N457+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current75m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage70 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.600m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)20m @Temp. (øC) (Test Condition)

equivalent diode for 1n457

Abstract: 1N457 equivalent 1n457a equivalent JESD282-B 1N457 1N458A
Contextual Info: 1N457A thru 1N459A Qualified Level: JAN Switching Diode Available on commercial versions Qualified per MIL-PRF-19500/193 DESCRIPTION These popular 1N457 – 1N459 series of JEDEC registered switching/signal diodes are metallurgically bonded. These small low capacitance diodes with very fast switching speeds

1N458B

Abstract: 1N5426 AMERICAN POWER DEVICES 1n914 1N5208 1N444 1N456 1N456A 1N457 1N457A 1N458
Contextual Info: AMERIC AN POWER D EVICES 53E D • 0737135 00000E3 — 1 DO-35 Case Type Peak Inverse Voltage Minimum Forward Current @25°C 1N456 1N456A 1N457 1N457A 1N458 PIV V mA 30 30 70 70 150 40 @ 100 @ 20 @ 100 @ 7@ If @ V f V 1 1 1 1 1 Maximum Capacitance Maximum