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    1N457A Price and Stock

    onsemi 1N457A

    DIODE GEN PURP 70V 200MA DO35
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    NTE Electronics Inc 1N457A

    DIODE GEN PURP 70V 200MA DO35
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    DIODE GEN PURP 70V 150MA DO35
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    Microchip Technology Inc 1N457AUR

    DIODE GP 70V 150MA DO213AA
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    onsemi 1N457ATR

    DIODE GEN PURP 70V 200MA DO35
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    1N457A Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N457A Fairchild Semiconductor Small Signal Diode Original PDF
    1N457-A Fairchild Semiconductor Small Signal Diode Original PDF
    1N457A Microsemi Silicon Switching Diode Original PDF
    1N457A Microsemi Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SWITCHING Original PDF
    1N457(A) Microsemi Silicon Diode Original PDF
    1N457A National Semiconductor High Conductance Low Leakage Diode Original PDF
    1N457A Taitron Components Rectifier Diode, Single, 70V, SOD-27|SOD-68, 2-Pin Original PDF
    1N457A APD Semiconductor Planar Diodes Scan PDF
    1N457A BKC International 60 V, 500 mW low leakage diode Scan PDF
    1N457/A BKC International LOW LEAKAGE DIODES Scan PDF
    1N457A Central Semiconductor Scan PDF
    1N457A Crimson Semiconductor SILICON DIODES Scan PDF
    1N457A Fairchild Semiconductor Low leakage diode. Working inverse voltage 60V. Scan PDF
    1N457A Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    1N457A General Diode Germanium Diodes, DO-7 Case Scan PDF
    1N457A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N457A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N457A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N457A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N457A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N457A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1n457a equivalent

    Abstract: BAV45 diode pico-amp low-leakage silicon diode 1N3595 1N457A 1N459A 1N485B 1N6263 CDH300
    Text: Silicon Diodes DO-35 Case Continued Low Leakage Diodes TYPE NO. 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 VRRM (V) MAX 70 200 200 150 150 150 IO (mA) MAX 200 200 200 150 200 200 VF (V) MAX 1.0 1.0 1.0 1.0 1.0 1.05 @ IF (mA) 100 100 100 200 200 200 IR @ VR


    Original     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 BAV45 1n457a equivalent BAV45 diode pico-amp low-leakage silicon diode 1N3595 1N457A 1N459A 1N485B 1N6263 CDH300

    Untitled

    Abstract: No abstract text available
    Text: 1N457AM Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage70 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)


    Original     		PDF 1N457AM Current150m Voltage70 Current25n

    equivalent diode for 1n457

    Abstract: No abstract text available
    Text: 1N457A thru 1N459A Qualified Level: JAN Switching Diode Available on commercial versions Qualified per MIL-PRF-19500/193 DESCRIPTION These popular 1N457 – 1N459 series of JEDEC registered switching/signal diodes are metallurgically bonded. These small low capacitance diodes with very fast switching speeds


    Original     		PDF 1N457A 1N459A MIL-PRF-19500/193 1N457 1N459 DO-35 1N459A T4-LDS-0023, equivalent diode for 1n457

    LL-35 MELF SMD

    Abstract: 1N4150 1N457A 1N41501N457A
    Text: Silicon Switching Diode DO-35 Glass Package 1N4150 1N457A Applications Used in general purpose applications,where a controlled forward characteristic is important. D O -35 G lass P ack age Features Lead Dia. 0.018-0.022" 0.458-0.558 mm Six sigma quality BKC's Sigma Bond plating


    Original     		PDF DO-35 1N4150 1N457A LL-35 10Continuous LL-35 MELF SMD 1N4150 1N457A 1N41501N457A

    ALL4150

    Abstract: 1N4606
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


    Original     		PDF 00000S3 DO-35 ALL4152 ALL4153 ALL4450 ALL4451 ALL4453 ALL4454 500mW ALL4150 1N4606

    equivalent diode for 1n457

    Abstract: 1N457 1N457 equivalent 1N457A JAN1N457 marking blue
    Text: FEATURES 1N457 • • • • • 1N457 AVAILABLE AS 1N457A, & AS JAN1N457 PER MIL-PRF-19500/193 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine, 8.3mS:


    Original     		PDF 1N457 1N457 1N457A, JAN1N457 MIL-PRF-19500/193 225mA 500mW 0256mA/ PRF-19500/193 equivalent diode for 1n457 1N457 equivalent 1N457A marking blue

    Untitled

    Abstract: No abstract text available
    Text: 1N457A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage70 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)


    Original     		PDF 1N457A Current200m Voltage70 Current25n StyleDO-35

    equivalent diode for 1n457

    Abstract: 1N457 equivalent 1n457a equivalent JESD282-B 1N457 1N458A
    Text: 1N457A thru 1N459A Qualified Level: JAN Switching Diode Available on commercial versions Qualified per MIL-PRF-19500/193 DESCRIPTION These popular 1N457 – 1N459 series of JEDEC registered switching/signal diodes are metallurgically bonded. These small low capacitance diodes with very fast switching speeds


    Original     		PDF 1N457A 1N459A MIL-PRF-19500/193 1N457 1N459 DO-35 1N459A 1N457 1N458 equivalent diode for 1n457 1N457 equivalent 1n457a equivalent JESD282-B 1N458A

    Untitled

    Abstract: No abstract text available
    Text: 1N457A / FDLL457A Small Signal Diode Cathode Band COLOR BAND MARKING DEVICE FDLL457A 1ST BAND WHITE SOD80 Absolute Maximum Ratings 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The


    Original     		PDF 1N457A FDLL457A

    1N5426

    Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


    Original     		PDF 00000S3 DO-35 400mW 1N4150 1N4152 1N4153 1N4305 DO-35 1N5426 1N5208 AMERICAN POWER DEVICES 1n914

    BAV45

    Abstract: CDSH27 CDH300 1N3595 1N457A 1N459A 1N485B 1N6263 CDH333 CDSH270
    Text: Silicon Diodes DO-35 Case Continued Low Leakage Diodes TYPE NO. 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 VRRM (V) MAX 70 200 200 150 150 150 IO (mA) MAX 200 200 200 150 200 200 VF (V) MAX 1.0 1.0 1.0 1.0 1.0 1.05 @ IF (mA) 100 100 100 200 200 200 IR @ VR


    Original     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 BAV45 BAV45 CDSH27 CDH300 1N3595 1N457A 1N459A 1N485B 1N6263 CDH333 CDSH270

    fjt1101

    Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
    Text: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125


    OCR Scan     		PDF 1N456 DO-35 1N456A 1N457 1N457A 1N458 fjt1101 FJT1102 1N459A FJT1100 1N458A

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) ("A) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case £3 Low Leakage Diodes lo Vf @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200 1.0


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649

    1N456A

    Abstract: 1N457 1N459a N457 1N456 1N457A 1N458 1N458A 1N459 low leakage diodes
    Text: B K C INTERN ATI ONA L □ 3E LOW LEAKAGE DIODES D I 117^^03 □□□□275 5 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ W IV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature


    OCR Scan     		PDF Q57sT~ 1N456 1N458 1N456A 1N458A 1N457 1N459 1N457A 1N459A 500mW 1N459a N457 1N458 1N458A 1N459 low leakage diodes

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. Vrrm l£> Vf @ If IR @ VR Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649

    FJT1

    Abstract: FJT1100 1N456A FJT1102
    Text: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A


    OCR Scan     		PDF 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A FDH300 DO-35 FJT1 FJT1100 FJT1102

    1n35

    Abstract: No abstract text available
    Text: Silicon D iodes DO-35 Case Low Leakage Diodes TYPE NO. •o VF @ IF IR V r Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649 1n35

    1N458B

    Abstract: 1N5426 AMERICAN POWER DEVICES 1n914 1N5208 1N444 1N456 1N456A 1N457 1N457A 1N458
    Text: AMERIC AN POWER D EVICES 53E D • 0737135 00000E3 — 1 DO-35 Case Type Peak Inverse Voltage Minimum Forward Current @25°C 1N456 1N456A 1N457 1N457A 1N458 PIV V mA 30 30 70 70 150 40 @ 100 @ 20 @ 100 @ 7@ If @ V f V 1 1 1 1 1 Maximum Capacitance Maximum


    OCR Scan     		PDF 00000H3 DO-35 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N5426 AMERICAN POWER DEVICES 1n914 1N5208 1N444

    1N4848

    Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
    Text: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70


    OCR Scan     		PDF fa501J T-01-01 1N456 DO-35 1N456A 1N457A 1N458 1N4848 1N4868 1N4828 1N484 1N4858 1N458A

    1N457A

    Abstract: 1N459A
    Text: Datasheet central 1N457A 1N459A Semiconductor Corp. SILICON DIODE 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE M anufacturers of W orld C lass D iscrete S em iconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 1N457A, 1N459A types are silicon planar diodes designed for


    OCR Scan     		PDF 1N457A 1N459A DO-35 1N457A, 1N459A 1N457A

    1N4858

    Abstract: Schottky Diodes do-35 1N3595 1N457A 1N459A 1N485B 1N6263 1N645 1N647 1N649
    Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 cdh300 cdh333 1N645 1N647 1N649 1N4858 Schottky Diodes do-35 1N6263

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    FDS01503

    Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
    Text: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family


    OCR Scan     		PDF D113D T-03-01 FDS01200 FDS01400 FDS01500 FDS01700 1N914 1N4149 FDH600 1N625 FDS01503 FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent