LJ64ZU52
Abstract: sharp LJ64ZU52 SMCD-29XL-ADX15-P1 Sumitomo Electric smcd LJ64ZU SMCD-29XL-ADX15 19374 K FLL151 sharp el display SHARP EL
Text: PREPARED 8Y: SPEC Na DATE SHARP FILE I IsSUE [. A-04402B No. Dec. PAGE LIQUID CRYSTAL D SPLAY GROUP SMRP ~RmRA~W SPECIFICATION DEVICE SPECIFICATION FOR EL D i s p l a y Unit lodelNo.LJ64zu52 QCUSTOMER’S APPROVAL DATE PRESENTED ,> BY BY /, f“ ($1.b~ T. C ilba
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-04402B
LJ64zu52
LJ6AZU52
LJ64ZU52
sharp LJ64ZU52
SMCD-29XL-ADX15-P1
Sumitomo Electric smcd
LJ64ZU
SMCD-29XL-ADX15
19374 K
FLL151
sharp el display
SHARP EL
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Motorola 417
Abstract: B815B6 DSP56000 DSP56001
Text: APR3Section4 Page 1 Wednesday, December 13, 1995 2:52 PM SECTION 4 Signed Multiplication “Integer or fractional multiplication can be accomplished on any signed hardware multiplier by appropriate shifting.” Consider the multiplication of two signed-integer
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1BA000
0001BA
24-bit
Motorola 417
B815B6
DSP56000
DSP56001
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC f X S T F S / R F . bflF J> • b3b72S4 00^0440 00Ö ■ M O T b MOTOROLA ■ SEM IC O N D U C T O R TECHNICAL DATA IRF830 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate This T M O S Power FET is designed for high
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b3b72S4
IRF830
Sy20AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
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regavolt
Abstract: 403L-PSV 402l VA-440 voltmeter 401-PS 401-PSV PTA 700 403L 402-PSV 402L-K
Text: 400 O S O -W l Regavolts SERIES Z F l o l l SINGLE UNITS for single-phase operation A N G LE O F ROTATION tw o-gang asse m b lie s fo r sin g le -p h a se se rie s o r th re e -p h a se o pen-delta ope ration and three-gang asse m b lie s fo r th re e -ph a se star operation are listed on pa ge s 1 2 -1 3
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402-K
403-K
404-K
401-R,
401-E
402-R,
402-E
403-R,
403-E
404-R,
regavolt
403L-PSV
402l
VA-440 voltmeter
401-PS
401-PSV
PTA 700
403L
402-PSV
402L-K
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NHI-1582ETFP
Abstract: stanag 4444 ADR7 STANAG 3838 stanag LISTING
Text: * New Product Release * NHI-1582ET +5V Only Dual Redundant Enhanced Terminal Bus Controller, Remote Terminal, ~ W ords Internal RAM The NHI-1582ET is a low cost complete MiI-Std-1553 Interface between a dual redundant MIL-STD-1553 bus and a host processor. The device
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NHI-1582ET
NHI-1582ET
MiI-Std-1553
MIL-STD-1553
il-Std-883
il-Std-1553,
5962See
L-38534
il-H-38534
NHI-1582ETFP
stanag 4444
ADR7
STANAG 3838
stanag LISTING
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MTM2P50
Abstract: MTP2P45 mtm2p45
Text: MOTOROLA SC X S T R S /R IME D I F b3b7254 G Q flW B | MOTOROLA •H SEMICONDUCTOR I TECHNICAL DATA MTM2P45 MTM2P50 MTP2P45 MTP2P50 Designer's Data Sheet Pow er Field Effect Transistor P-Channe! Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed for medium voltage,
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b3b7254
MTM2P50
MTP2P45
mtm2p45
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120uh
Abstract: No abstract text available
Text: 1. Dim ensions: 2 .S c h e m a t ic : 0.030 0.098- Typ 3 PR -0.490 SEC 7 Max- 10 XFMRS 3.E le ct r ic a l S p e c if ic a t io n s: @25°C LO lO XFADSL1 9 o YYWW o o o o «-0 . 5 5 0 P 1 0 —7 :(P1 —4) PIN 1 —4 OCL: y y y y y 5 Ratio: PIN 1 - 4 Tape
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P10-7)
120uH
100KHz
100NHz
PIN1-10
10KPz
P10-8
300KHz
300KPz
120uh
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04P28
Abstract: 04P20 04P44
Text: BZW04P-5V8 THRU BZW04-376 GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 5.8 to 376 Volts Peak Pulse Power - 400 Watts _ FEATURES_ D0204AL ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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BZW04P-5V8
BZW04-376
D0204AL
10/1000ns
BZW04P5V8
BZWQ4-376
04P28
04P20
04P44
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PCO-7110
Abstract: 65SC150 fa 5542 G65SC150 DTMF Tone Decoder 14PIN 01C0-01FF G65SC00 T2KU ZPG 203
Text: M »/ S E M I C O N D U C T O R DIV HE D • lfl31bM_0 Q O D lHQfl 6 W C A L I T - 7 5 - 9 ^ A G65SC150 C M D Microcircuits_ _ Features General Description • G enerates sig n a ls c o m p a tib le w ith s w itc h e d te le p h o n e ne tw o rks
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31Lj4Q
GGD14Ã
G65SC150
bus30
40-PIN
PCO-7110
65SC150
fa 5542
G65SC150
DTMF Tone Decoder 14PIN
01C0-01FF
G65SC00
T2KU
ZPG 203
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Untitled
Abstract: No abstract text available
Text: CM»/ SEMICONDUCTOR DIV HE D • lfl31b»40 QODlHQfl 6 W C A L I T -75-<9o A G65SC150 C M D Microcircuits_ _ CMOS Communications Terminal Unit Telecommunication Microcomputer Features General Description • G enerates sig n a ls c o m p a tib le w ith s w itc h e d te le p h o n e netw o rk s
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lfl31bÂ
G65SC150
G65SC150
syste30
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2N6307 Motorola
Abstract: 2N6308 2N6306 2N6303 2n6308 motorola
Text: MOTOROLA SC XSTRS/R F g . . - ï^ N _ - . - 12E D I k3k72S4 OOAIbeb 7 | MOTOROLA 7^ 33 -/3 2N6303 SEMICONDUCTOR TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching
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k3k72S4
2N6303
2N6306
2N6307,
2N6308
2N6306
2N6307
2N6308
2N6306,
2N6307 Motorola
2N6303
2n6308 motorola
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382533-9
Abstract: 382533-2
Text: 7 8 DRAWING MADE T H IS IN DRAWING T H IR D IS ANGLE 6 5 P R O JE C T IO N U N P U B L ISH E D . COPYRIGHT 19 RELEASED BY AMP FOR 3 4 2 LOC PU B LIC A T IO N INCORPORATED. DIST AG 53 ALL INTERNATIONAL RIGHTS RESERVED. 1 R E V ISIO N S ZONE D E S C R IP T IO N
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bfl 177
Abstract: IR 92 0151 motorola 600 ssd MTP2N50 mosfet ssd
Text: MOTOROLA SC M O TO R O LA XSTRS/R F bfl E ]> • fc>3b72S4 ÜO' îflSM? 052 ■MOTf c. ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t Tran sistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2 AMPERES RDS(on) = 4 OHMS
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3b72S4
O-204AA)
97A-01
97A-03
97A-03
O-204AE)
bfl 177
IR 92 0151
motorola 600 ssd
MTP2N50
mosfet ssd
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D03316P
Abstract: D03316P-222 D0-3316P-152 D03308P D03316P-333 d03316p-224 0436T D0-3316P-682 0458T D03316P-152
Text: Pulse MINIATURE SURFACE MOUNT POWER INDUCTORS A TECHNI TROL C O M P A N Y Reliable self-leads ia Very small size and cost-effective High energy storage and low DC resistance Ideal for DC/DC conversion in notebook computers, PDAs, step-up or step-down converters
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D03308P-103
D03308P-153
D03308P-223
D03308P-333
D03308P-473
D03308P-683
D03308P-104
D03308P-154
D03308P-224
D03308P-334
D03316P
D03316P-222
D0-3316P-152
D03308P
D03316P-333
d03316p-224
0436T
D0-3316P-682
0458T
D03316P-152
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tp5n40
Abstract: Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E
Text: b3b725H DDTflSSS HIT bflE D MOTOROLA SC XSTRS/R F MOTOROLA inOTb • SEMICONDUCTOR TECHNICAL DATA MTM5N40 *MTP5N40E Designer's Data Sheet •M otorola Preferred Device Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FETs
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b3b725H
O-204AA)
97A-01
97A-03
-fUO-30(
97A-03
O-204AE)
tp5n40
Motorola transistor 388 TO-204AA
TIC 160 D
M30TR
TP5N40E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R b3b?254 D F □ □ ‘ìflHEG TST inOTb MOTOROLA • SEM ICONDUCTOR ■ TECHNICAL DATA Part Number VDSS RDS(on) >d IRF440 500 V 0.85 n 8.0 A N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed
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IRF440
97A-01
97A-03
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stu 4070
Abstract: mt 13890 e 11720 M6805 EQ 15310 an 17830 A MX 0842 mps 0815 07380 PASM05
Text: Order this document by AN1055/D MOTOROLA SEMICONDUCTOR ^ APPLICATION NOTE AN1055 M6805 16-Bit Support Macros If your microcontroller MCU application requires a small amount of program memory and not much raw computing power, the M6805 MCU Family is a most logical choice, given
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AN1055/D
AN1055
M6805
16-Bit
M68HC11
stu 4070
mt 13890 e
11720
EQ 15310
an 17830 A
MX 0842
mps 0815
07380
PASM05
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qualcomm aT commands
Abstract: Q4400 qualcomm 7200 qualcomm IQ Qualcomm DDS viterbi algorithm qualcomm AT Command
Text: I Preliminary Technical Data Sheet for the Q4400 Variable Rate Vocoder Q ualco /w sa ^ 9 - VLSI Products 10555 Sorrento Valley Road San Diego, CA USA 92121-1617 Phone: 619 597-5005 FAX: (619) 452-9096 March 1993 DL80-3749-8 X2 a Other QUALCOMM VLSI Products
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Q4400
DL80-3749-8
qualcomm aT commands
qualcomm 7200
qualcomm IQ
Qualcomm DDS
viterbi algorithm
qualcomm AT Command
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MTP2N85
Abstract: MTP2N90 td 3404 ap n1TM transistor 3405 motorola MTM2N85
Text: IM E M O TO RO LA SC X S T R S / R D I b 3 b 7 2 S 4 Q Q f i'n b ö 5 | F M O TO R O LA • SEMICONDUCTOR T E C H N IC A L D A T A MTM2N85 MTM2N90 MTP2N85 MTP2N90 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS
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MTM2N85
MTM2N90
MTP2N85
MTP2N90
021SBSC
21A-04
O-220AB
0005KS)
T0-204M
MTP2N90
td 3404 ap
n1TM
transistor 3405 motorola
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SN74ALS123
Abstract: SN7401 74LS424 54175 SN74298 SN74265 SN74LS630 SN74LS69 National Semiconductor Linear Data Book Transistor AF 138
Text: INDEX • FUNCTIONAL SELECTION GUIDE • NUMERICAL FUNCTION INTERCHANGEABILITY GUIDE GENERAL INFORMATION AND EXPLANATION OF NEW LOGIC SYMBOLS ORDERING INSTRUCTIONS AND MECHANICAL DATA 54/74 SERIES OF COMPATIBLE TTL CIRCUITS • PIN OUT DIAGRAMS 54/74 FAMILY SSI CIRCUITS
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MIL-M-38510
SN74ALS123
SN7401
74LS424
54175
SN74298
SN74265
SN74LS630
SN74LS69
National Semiconductor Linear Data Book
Transistor AF 138
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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Qualcomm Q4401
Abstract: Q4401 qualcomm 7200 qualcomm qualcomm ww code excited linear predictive BA 658 VOCODER IQG3 Q440I
Text: Q4401 VARIABLE RATE VOCODER GENERAL DESCRIPTION The QUALCOMM Q4401 Variable Rate Vocoder is a full-duplex speech Encoder and Decoder that produces near toll-quality speech at compressed data rates of under 9.6 kilobits per second kbps . The Q4401 provides a single-chip solution to the speech
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Q4401
Q4401
TQ0333fci
DSP1616X11
00333b
Qualcomm Q4401
qualcomm 7200
qualcomm
qualcomm ww
code excited linear predictive
BA 658
VOCODER
IQG3
Q440I
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35n05
Abstract: 35N06 MTM35N05 MTM35N06 MTH35N05 TH35N TH35N05
Text: MOTOROLA SC XSTRS/R IME D § F fc.3i.72SM G O û T O l M| MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TH35N 05 M TH35N 06 M TM 35N 05 M TM 35N 06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed fo r high speed power
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TH35N
a4306SC
35n05
35N06
MTM35N05
MTM35N06
MTH35N05
TH35N05
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2N6300
Abstract: No abstract text available
Text: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching
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L3b7254
2N6053,
2N6054
2N6298,
2N6299
2N6055,
2N6056
2N6300,
2N6301
2N6300
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