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    35N06 Search Results

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    Rochester Electronics LLC FDPF035N06B

    88A, 60V, 0.0035OHM, N CHANNEL ,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDPF035N06B Bulk 177,137 243
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    • 1000 $1.24
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    Diotec Semiconductor AG DI0A35N06PGK-AQ

    MOSFET, DFN1006-3, 60V, 0.35A, 1
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    DigiKey DI0A35N06PGK-AQ Reel 10,000 10,000
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    DI0A35N06PGK-AQ Digi-Reel 10,000 1
    • 1 $0.22
    • 10 $0.129
    • 100 $0.0823
    • 1000 $0.05094
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    DI0A35N06PGK-AQ Cut Tape 10,000 1
    • 1 $0.22
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    Mouser Electronics DI0A35N06PGK-AQ 4,584
    • 1 $0.22
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    • 100 $0.084
    • 1000 $0.048
    • 10000 $0.028
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    TME DI0A35N06PGK-AQ 1
    • 1 $0.2195
    • 10 $0.1323
    • 100 $0.0661
    • 1000 $0.0309
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    ROHM Semiconductor RSQ035N06HZGTR

    MOSFET N-CH 60V 3.5A TSMT6
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    DigiKey RSQ035N06HZGTR Cut Tape 8,623 1
    • 1 $0.78
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    • 100 $0.4406
    • 1000 $0.329
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    RSQ035N06HZGTR Digi-Reel 8,623 1
    • 1 $0.78
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    RSQ035N06HZGTR Reel 3,000 3,000
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    Mouser Electronics RSQ035N06HZGTR 8,552
    • 1 $0.76
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    • 1000 $0.31
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    Newark RSQ035N06HZGTR Cut Tape 1
    • 1 $0.79
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    TTI RSQ035N06HZGTR Reel 156,000 3,000
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    TME RSQ035N06HZGTR 1
    • 1 $0.681
    • 10 $0.553
    • 100 $0.401
    • 1000 $0.294
    • 10000 $0.227
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    Ameya Holding Limited RSQ035N06HZGTR 50 1
    • 1 $0.26
    • 10 $0.259
    • 100 $0.248
    • 1000 $0.238
    • 10000 $0.224
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    Avnet Silica RSQ035N06HZGTR 19 Weeks 3,000
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    Chip One Stop RSQ035N06HZGTR Cut Tape 2,440 0 Weeks, 1 Days 5
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    CoreStaff Co Ltd RSQ035N06HZGTR 6,000
    • 1 $0.532
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    RSQ035N06HZGTR 2,645
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    • 100 $0.256
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    PanJit Group PJD35N06A_L2_00001

    60V N-CHANNEL ENHANCEMENT MODE M
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    DigiKey PJD35N06A_L2_00001 Cut Tape 2,560 1
    • 1 $0.89
    • 10 $0.555
    • 100 $0.3604
    • 1000 $0.24939
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    PJD35N06A_L2_00001 Digi-Reel 2,560 1
    • 1 $0.89
    • 10 $0.555
    • 100 $0.3604
    • 1000 $0.24939
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    UMW 35N06

    TO-252 N-CHANNEL POWER MOSFET
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    DigiKey 35N06 Cut Tape 2,392 1
    • 1 $1.52
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    • 100 $0.6071
    • 1000 $0.42589
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    35N06 Digi-Reel 2,392 1
    • 1 $1.48
    • 10 $0.934
    • 100 $0.6249
    • 1000 $0.45487
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    35N06 Reel 2,500
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    35N06 Datasheets Context Search

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    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    35N06

    Abstract: C293 SEFH35H06 G7E Diode SEFH35N05
    Text: S G S-THÔMSÔN Q?E D 73C 1 7 5 6 8 7c15ciE37 OOlfl071 □ D T v^ -U » SEFH35N05 SEFH35H06 SEFM35N05 35N06 W ' i l H N -G H A N N El POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


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    OOlfl071 SEFH35N05 SEFH35H06 SEFM35N05 SEFH35N06 0V/60V 35N06 SGSP491 C-293 C293 G7E Diode PDF

    35N06

    Abstract: MTM35N06 TH35N06 35N05 MTM35N05 TH35N05 MTH35N05
    Text: MOTOROLA • SEMICONDUCTOR m h h h h TECHNICAL DATA MTH35N05 35N06 MTM35N05 35N06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r h ig h s p e e d p o w e r


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    35n05

    Abstract: 35N06 MTM35N05 MTM35N06 MTH35N05 TH35N TH35N05
    Text: MOTOROLA SC XSTRS/R IME D § F fc.3i.72SM G O û T O l M| MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TH35N 05 M TH35N 06 M TM 35N 05 M TM 35N 06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed fo r high speed power


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    TH35N a4306SC 35n05 35N06 MTM35N05 MTM35N06 MTH35N05 TH35N05 PDF