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    35n05

    Abstract: 35N06 MTM35N05 MTM35N06 MTH35N05 TH35N TH35N05
    Text: MOTOROLA SC XSTRS/R IME D § F fc.3i.72SM G O û T O l M| MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TH35N 05 M TH35N 06 M TM 35N 05 M TM 35N 06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed fo r high speed power


    OCR Scan     		TH35N a4306SC 35n05 35N06 MTM35N05 MTM35N06 MTH35N05 TH35N05 PDF