la 1004a
Abstract: No abstract text available
Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS ORAM 1 M x 1 6B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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KM416C1004A,
KM416C1204A
KM416V1004A,
KM416V1204A
1Mx16
la 1004a
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RAS 1210 SUN HOLD
Abstract: sun hold RAS 1220 sun hold ras 1210
Text: CMOS DRAM KM416V1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16V 1204A /A -L7A -F is a C M O S high • Performance range: tRA C tC A C tR C tH PC 24ns KM416V1204A-6/A-L6/A-F6 60ns 17ns
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KM416V1204A/A-L/A-F
KM416V1204A-6/A-L6/A-F6
110ns
KM416V1204A-7/A-L7/A-F7
130ns
KM416V1204A-8/A-L8/A-F8
150ns
42-LEAD
44-LEAD
RAS 1210 SUN HOLD
sun hold RAS 1220
sun hold ras 1210
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31DQ11
Abstract: No abstract text available
Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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KM416C1004A,
KM416C1204A
KM416V1004A,
KM416V1204A
16Bit
1Mx16
31DQ11
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Untitled
Abstract: No abstract text available
Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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OCR Scan
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PDF
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KM416C1004A,
KM416C1204A
KM416V1004A,
KM416V1204A
16Bit
1Mx16
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KM416V1204A
Abstract: C1004A KM416V1004A km416c1204a
Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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OCR Scan
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KM416C1004A,
KM416C1204A
KM416V1004A,
KM416V1204A
1Mx16
005033T
KM416V1204A
C1004A
KM416V1004A
km416c1204a
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UA529
Abstract: No abstract text available
Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1 Mx16 Bi t CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 1 ,0 4 8 ,5 7 6 x 1 6 bit D x te n d e d D a ta O u t C M O S D R A M s. D x te n d e d D a ta O u t m o d e o ffe rs
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KM416C1004A,
KM416C1204A
KM416V1004A,
KM416V1204A
UA529
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KM416v1204at
Abstract: 416V1204 KM416V1204A
Text: KM416V1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC tHPC KM416V1204A-6/A-L6/A-F6 60ns 17ns 110ns 24ns KM416V1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416V1204A-8/A-L8/A-F8
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KM416V1204A/A-L/A-F
KM416V1204A/A-L/A-F
416V1204A/A-L/A-F
44-LEAD
KM416v1204at
416V1204
KM416V1204A
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Untitled
Abstract: No abstract text available
Text: KMM332F104AT-L KMM332F124AT-L DRAM MODULE KMM332F104AT-L / KMM332F124AT-L Fast Page with EDO Mode 1Mx32 DRAM DIMM, 1Mx16, Low Pow er, 4K & 1K Refresh, 3.3V GEN ER AL FEATURES DESCRIPTION The Samsung KMM332F10 2 4AT is a 1M bit x 32 Dynamic RAM high density memory module. The
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KMM332F104AT-L
KMM332F124AT-L
KMM332F104AT-L
KMM332F124AT-L
1Mx32
1Mx16,
KMM332F10
16bit
44-pin
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KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6
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KM41C4000C-5
KM41C4000CL-5
KM41C4002C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000CL-7
KM41C4002C-7
KM41V4000C-7
KM41V4000CL-7
KM41C4000C-8
KM44C4000aS 6
KM44C4000AS
KM44C4000A-S
km44c4100as
KM48V2100AL
KM416V256BL
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23
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KM41C1000D
KM44C256D.
KM41C4000C
KM41V4000C.
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Untitled
Abstract: No abstract text available
Text: STI641004G1-70SVGS 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DlMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: • • • • • • • • • • • *RAC ^CAC ‘ rc *HPC 70ns 20ns 124ns 30ns The Simple Technology STI641004G1-70SVGS is a 1M x 64
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STI641004G1-70SVGS
144-PIN
STI641004G1-70SVGS
44-pin
400-mil
Tab17.
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KM418C256
Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80
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KM41C1000D#
KM41C10OOD-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
KM41C4000C#
KM41C4000CL#
KM41C4002C#
KM41V4000C#
KM418C256
KM48C2100AL
KM416C254
KM44V4100AL
KM44C1003
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KM48V2104B
Abstract: KM48C2104B
Text: FUNCTION GUIDE MEMORY ICs Density 16M bit Org. 4Mx4 Power Supply Port Number, 3.3V+0.3V KM44V4104B# features ' * w » 60/70/80 EDO 2K 50/60/70 Fast Page{4K) KM44V4104BL# 16M B/W 2Mx8 5V±10% KM48C2000B# Packages ' : K.-24 Pin S 0j(300m il) S.-24 Pin TSOP-ll(300mil)
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300mil)
300mil]
300milj
KM44V4104B#
KM44V4104BL#
KM48C2000B#
KM48C2000B-L#
KM48C2100B#
KM48C2100B
KM48C2004B#
KM48V2104B
KM48C2104B
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372F124AJ KMM372F124AJ with EDO Mode 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F124AJ consists of four CMOS
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KMM372F124AJ
KMM372F124AJ
1Mx72
1Mx16
1Mx16bit
400mil
300mil
16bits
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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KM416v1204at
Abstract: No abstract text available
Text: KMM332F104AT-L KMM332F124AT-L DRAM MODULE KMM332F104AT-L / KMM332F124AT-L Fast Page with EDO Mode 1Mx32 DRAM DIMM, 1Mx16, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL FEATURES D E S C R IP T IO N The Samsung KMM332F10 2 4AT is a 1M bit x 32 D ynam ic RAM high density m em ory module. The
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KMM332F104AT-L
KMM332F124AT-L
KMM332F124AT-L
1Mx32
1Mx16,
KMM332F104AT-L6/L7
cycles/128ms
60/70ns)
KMM332F124AT-L6/L7
KM416v1204at
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
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KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM374F124AJ KMM374F124AJ EDO Mode without buffer 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM374F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM374F124AJ consists of four CMOS
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KMM374F124AJ
KMM374F124AJ
1Mx72
1Mx16
1Mx16bit
400mil
300mil
168-pin
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