IBM025161LG5D60
Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.
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MB81141621
MB81141622
MB81G8322
MB81116421
TC59R1608
2ns500MHz
TC59R0808
IBM025161LG5D60
gm72v16821
MD908
KM48S2020
TC59R1809
GM72V1682
KM4232W259Q60
KM416S1120A
IBM025171LG5D-70
KM44S4020AT
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Untitled
Abstract: No abstract text available
Text: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8
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KM416C1204A/A-L/A-F
KM416C1204A-6/A-L6/A-F6
110ns
KM416C1204A-7/A-L7/A-F7
130ns
KM416C1204A-8/A-L8/A-F8
150ns
cycle/16m
cycle/128msCLE
71b4142
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la 1004a
Abstract: No abstract text available
Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS ORAM 1 M x 1 6B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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KM416C1004A,
KM416C1204A
KM416V1004A,
KM416V1204A
1Mx16
la 1004a
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KM416C1204AJ
Abstract: km416c1204a 1076 GE
Text: CMOS DRAM KM416C1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1204A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance
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KM416C1204A/A-L/A-F
KM416C1204A-6/A-L6/A-F6
KM416C1204A-7/A-L7/A-F7
KM416C1204A-8/A-L8/A-F8
110ns
130ns
150ns
KM416C1204A/A-L/A-F
KM416C1204AJ
km416c1204a
1076 GE
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31DQ11
Abstract: No abstract text available
Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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OCR Scan
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PDF
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KM416C1004A,
KM416C1204A
KM416V1004A,
KM416V1204A
16Bit
1Mx16
31DQ11
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Untitled
Abstract: No abstract text available
Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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OCR Scan
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PDF
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KM416C1004A,
KM416C1204A
KM416V1004A,
KM416V1204A
16Bit
1Mx16
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KM416V1204A
Abstract: C1004A KM416V1004A km416c1204a
Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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OCR Scan
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KM416C1004A,
KM416C1204A
KM416V1004A,
KM416V1204A
1Mx16
005033T
KM416V1204A
C1004A
KM416V1004A
km416c1204a
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UA529
Abstract: No abstract text available
Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1 Mx16 Bi t CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 1 ,0 4 8 ,5 7 6 x 1 6 bit D x te n d e d D a ta O u t C M O S D R A M s. D x te n d e d D a ta O u t m o d e o ffe rs
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OCR Scan
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KM416C1004A,
KM416C1204A
KM416V1004A,
KM416V1204A
UA529
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Untitled
Abstract: No abstract text available
Text: KMM364Ë224AJ DRAM MODULE KMM364E224AJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 1 6 ,1 K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364F224AJ is a 2M bit X 64 Dynamic RAM high density memory module. The Samsung KMM364E224AJ consists of eight CMOS
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KMM364Ã
224AJ
KMM364E224AJ
2Mx64
KMM364F224AJ
1Mx16bit
44-pin
400mil
48pin
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KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6
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KM41C4000C-5
KM41C4000CL-5
KM41C4002C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000CL-7
KM41C4002C-7
KM41V4000C-7
KM41V4000CL-7
KM41C4000C-8
KM44C4000aS 6
KM44C4000AS
KM44C4000A-S
km44c4100as
KM48V2100AL
KM416V256BL
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Untitled
Abstract: No abstract text available
Text: KM416C1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1004A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance
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KM416C1004A/A-L/A-F
KM416C1004A/A-L/A-F
42-LEAD
44-LEAD
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23
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KM41C1000D
KM44C256D.
KM41C4000C
KM41V4000C.
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km416c1204aj
Abstract: No abstract text available
Text: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The
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KMM5322204AW/AWG
KMM5322204AW/AWG
2Mx32
1Mx16
KMM5322204AW
KMM5322204AW
cycles/16ms
5322204AW
1Mx16bit
42-pin
km416c1204aj
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS
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KMM5362205AW/AWG
KMM5362205AW/AWG
2Mx36
KMM5362205AW
1Mx16
42-pin
KMM5362205AW
cycles/16ms
24-pin
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KM418C256
Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80
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KM41C1000D#
KM41C10OOD-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
KM41C4000C#
KM41C4000CL#
KM41C4002C#
KM41V4000C#
KM418C256
KM48C2100AL
KM416C254
KM44V4100AL
KM44C1003
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KM48V2104B
Abstract: KM48C2104B
Text: FUNCTION GUIDE MEMORY ICs Density 16M bit Org. 4Mx4 Power Supply Port Number, 3.3V+0.3V KM44V4104B# features ' * w » 60/70/80 EDO 2K 50/60/70 Fast Page{4K) KM44V4104BL# 16M B/W 2Mx8 5V±10% KM48C2000B# Packages ' : K.-24 Pin S 0j(300m il) S.-24 Pin TSOP-ll(300mil)
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300mil)
300mil]
300milj
KM44V4104B#
KM44V4104BL#
KM48C2000B#
KM48C2000B-L#
KM48C2100B#
KM48C2100B
KM48C2004B#
KM48V2104B
KM48C2104B
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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km416c1204a
Abstract: km416c1204aj
Text: DRAM MODULE KMM5321204AW/AWG KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification - KMM5321204AW {1024 cycles/16 ms Ref, SOJ, Solder
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OCR Scan
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M5321204A
KMM5321204AW/AWG
1Mx32
KMM5321204AW
KMM5321
204AW
1Mx16bit
42-pin
72-pin
km416c1204a
km416c1204aj
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Untitled
Abstract: No abstract text available
Text: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS
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OCR Scan
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KMM5321204AW
KMM5321204AW/AWG
1Mx32
KMM5321204AW
1Mx16bit
42-pin
72-pin
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km416c1204aj
Abstract: 9-14110 KMM5362205AWG
Text: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS
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OCR Scan
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KMM5362205AW/AWG
KMM5362205AW/AWG
2Mx36
KMM5362205AW
1Mx16
42-pin
24-pin
72-pin
km416c1204aj
9-14110
KMM5362205AWG
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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OCR Scan
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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Untitled
Abstract: No abstract text available
Text: KM416C1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1004A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance
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OCR Scan
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PDF
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KM416C1004A/A-L/A-F
KM416C1004A/A-L/A-F
KM416C1004A-6/A-L6/A-F6
110ns
416C1004A-7/A-L7/A-F7
130ns
KM416C1004A-8/A-L8/A-F8
150ns
caDQ16
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KMM5322204AW
Abstract: No abstract text available
Text: KMM5322204AW DR A M Modul e ELECTRONICS KM M5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 Dynamic RAM high density memory module. The
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OCR Scan
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KMM5322204AW
M5322204AW/AWG
2Mx32
1Mx16
KMM5322204AW
42-pin
72-pin
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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