KM48C2000B
Abstract: KM48C2100B KM48V2000B KM48V2100B V2000B V2100B
Text: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
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KM48C2000B,
KM48C2100B
KM48V2000B,
KM48V2100B
KM48C2000B
KM48C2100B
KM48V2000B
KM48V2100B
V2000B
V2100B
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C213BK/BS KMM372C213BK/BS with Fast Page Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C213B is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C213B consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II
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KMM372C213BK/BS
KMM372C213BK/BS
KMM372C213B
2Mx72bits
KMM372C213B
300mil
16bits
48pin
168-pin
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KM48C2100
Abstract: No abstract text available
Text: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS with Fast Page Mode 2M x 64 DRAM DIMM using 2Mx8, 2K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C213B is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C213B consists of eight CMOS 2Mx8bits DRAMs in SOJ/TSOP-II
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KMM364C213BK/BS
KMM364C213BK/BS
KMM364C213B
2Mx64bits
KMM364C213B
300mil
16bits
48pin
168-pin
KM48C2100
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Untitled
Abstract: No abstract text available
Text: KM48C2100BK CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM48C2100BK
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km48c2000
Abstract: No abstract text available
Text: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T h is is a fa m ily o f 2 ,0 9 7 ,1 5 2 x 8 bit F a s t P a g e M o d e C M O S D R A M s. F a st P a g e M o d e o ffe rs h ig h s p e e d
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KM48C2000B,
KM48C2100B
KM48V2000B,
KM48V2100B
km48c2000
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00-BK
Abstract: No abstract text available
Text: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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OCR Scan
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KM48C2000B,
KM48C2100B
KM48V2000B,
KM48V2100B
00E33D1
00-BK
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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KM48V2100B
Abstract: No abstract text available
Text: KM48V2000BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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OCR Scan
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PDF
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KM48V2000BK
48V2000BK
03552A
KM48V2100B
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Untitled
Abstract: No abstract text available
Text: KMM372C213BK/BS DRAM MODULE KMM372C213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Samsung KMM372C213B is a 2M bit x 72 • Part Identification - KMM372C213BK 2048 cycles/32ms, SOJ Dynamic RAM high density memory module. The
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KMM372C213BK/BS
KMM372C213BK/BS
2Mx72
KMM372C213B
KMM372C213BK
cycles/32ms,
300mil
48pin
168-pin
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Untitled
Abstract: No abstract text available
Text: K M 4 8 C 2 1 OOBS CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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OCR Scan
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PDF
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512Kx8)
KM48C2100BS
D3S337
7Tb4142
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Untitled
Abstract: No abstract text available
Text: KM48C2000B K CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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OCR Scan
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KM48C2000B
16Mx4,
512Kx8)
KM48C2000BK
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KM48V2104B
Abstract: KM48C2104B
Text: FUNCTION GUIDE MEMORY ICs Density 16M bit Org. 4Mx4 Power Supply Port Number, 3.3V+0.3V KM44V4104B# features ' * w » 60/70/80 EDO 2K 50/60/70 Fast Page{4K) KM44V4104BL# 16M B/W 2Mx8 5V±10% KM48C2000B# Packages ' : K.-24 Pin S 0j(300m il) S.-24 Pin TSOP-ll(300mil)
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300mil)
300mil]
300milj
KM44V4104B#
KM44V4104BL#
KM48C2000B#
KM48C2000B-L#
KM48C2100B#
KM48C2100B
KM48C2004B#
KM48V2104B
KM48C2104B
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KM48V2100B
Abstract: 2100BK
Text: KM48V2100BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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OCR Scan
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KM48V2100BK
16Mx4,
512Kx8)
2100BK
71L4142
KM48V2100B
2100BK
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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KM48V2100B
Abstract: No abstract text available
Text: KM48V2000BS CMOS DRAM ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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OCR Scan
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PDF
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KM48V2000BS
16Mx4,
512Kx8)
0D35S4Û
48V2000BS
KM48V2100B
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C213BK/BS KMM372C213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 5V G ENER AL DESCRIPTIO N FEATURES The Samsung KMM372C213B is a 2M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C213B consists of nine CMOS
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OCR Scan
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PDF
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KMM372C213BK/BS
2Mx72
KMM372C213B
300mil
48pin
168-pin
110ns
130ns
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Untitled
Abstract: No abstract text available
Text: KM48C2000BS CMOS D R A M ELECTRONICS 2M x 8 Bit C M O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily o1 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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OCR Scan
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PDF
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KM48C2000BS
16Mx4,
512Kx8)
GG3S251
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KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
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KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
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km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
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KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS Fast Page Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364C213B is a 2M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The - KMM364C213BK 2048 cycles/32ms Ref, 30 0m il SOJ
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KMM364C213BK/BS
KMM364C213BK/BS
2Mx64
364C213B
KMM364C213BK
cycles/32ms
KMM364C213BS
300mil
48pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM48C2100 CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM48C2100 is a CMOS high speed 2,097,152 b it x 8 D ynam ic Random A ccess M em ory. Its de sig n is op tim ized fo r high perform ance a p p lica tio n s
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KM48C2100
KM48C2100
110ns
KM48C2100-7
130ns
KM48C2100-8
150ns
KM48C2100-6
200/is
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Untitled
Abstract: No abstract text available
Text: KMM5322100BKU DRAM Module ELECTRONICS KMM53221OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 - KMM5322100BKU 2048 cycles/32 ms Ref, SOJ, Solder
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KMM5322100BKU
KMM53221OOBKU/BKUG
2Mx32
KMM5322100BKU
cycles/32
KMM5322100BKUG
cydes/32
28-pin
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