Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXSH24N60 Search Results

    SF Impression Pixel

    IXSH24N60 Price and Stock

    IXYS Corporation IXSH24N60

    IGBT 600V 48A 150W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH24N60 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXSH24N60B

    IGBT 600V 48A 150W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH24N60B Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXSH24N60A

    IGBT 600V 48A 150W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH24N60A Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXSH24N60U1

    IGBT 600V 48A 150W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH24N60U1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXSH24N60AU1

    IGBT 600V 48A 150W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH24N60AU1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more IXSH24N60 price and stock on Findchips.com

    IXSH24N60 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXSH24N60 IXYS 600V HiPerFAST IGBT Original PDF
    IXSH24N60A IXYS 600V HiPerFAST IGBT Original PDF
    IXSH24N60ASN IXYS IGBT Chip: N Channel: 600V: TO-247AD: 3-Pin Original PDF
    IXSH24N60AU1 IXYS 600V HiPerFAST IGBT with diode Original PDF
    IXSH24N60AU1SN IXYS IGBT Chip: N Channel: 600V: TO-247AD: 3-Pin Original PDF
    IXSH24N60B IXYS 600V high speed IGBT Original PDF
    IXSH24N60BD1 IXYS IGBT Discretes Original PDF
    IXSH24N60BD1SN IXYS High Speed IGBT Original PDF
    IXSH24N60SN IXYS IGBT Chip: N Channel: 600V: TO-247AD: 3-Pin Original PDF
    IXSH24N60U1 IXYS 600V HiPerFAST IGBT with diode Original PDF
    IXSH24N60U1SN IXYS IGBT Chip: N Channel: 600V: TO-247AD: 3-Pin Original PDF

    IXSH24N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFD75N10

    Abstract: IXFD180N07-9X IXFD340N07-9Y
    Text: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type VCES VCE sat @ IC Cies typ. Chip type pF tfi typ. 25°C ns V V A 2 20 1800 500 IX4X 5.65 x 4.70 222 x 185 15 mil x 1 IXSH24N60 11 High Speed Low VCE(sat) TJM = 150°C


    Original     		PDF IXFH76N07-12 IXFX180N10 IXFN340N07 IXFX15N8085 IXFH67N10 IXFH75N10 IXFH75N10Q IXFH80N10Q IXFK170N10 IXFN230N10 IXFD75N10 IXFD180N07-9X IXFD340N07-9Y

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT IXSH24N60 IXSH24N60A Short Circuit SOA Capability VCES IC90 VCE sat 600V 600V 24A 24A 2.2V 2.7V TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXSH24N60 IXSH24N60A O-247 338B2

    IC TL 071 APPLICATIONS

    Abstract: IC tl 072 IXSH24N60 IXSH24N60A
    Text: Advance Technical Information HiPerFASTTM IGBT IXSH24N60 IXSH24N60A Short Circuit SOA Capability VCES IC90 VCE sat 600V 600V 24A 24A 2.2V 2.7V TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXSH24N60 IXSH24N60A O-247 338B2 IC TL 071 APPLICATIONS IC tl 072 IXSH24N60 IXSH24N60A

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		PDF SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120

    IXSH24N60A

    Abstract: No abstract text available
    Text: □ IXYS HiPerFAST IGBT with Diode / IXSH24N60U1S IXSH24N60U1 IXSH24N60AU1 / IXSH24N60AU1S V CES ^C25 V C E sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V v CGR T d = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF IXSH24N60U1S IXSH24N60U1 IXSH24N60AU1 IXSH24N60AU1S 24N60U1 24N60AU1 24N60U1S 24N60AU1S IXSH24N60A

    24N60AU1

    Abstract: 24n80
    Text: HiPerFAST IGBT with Diode IXSH24N60U1/IXSH24N60U1S IXSH24N60 AU1 /IXSH24N60 All 1S v CES ^C25 V v CE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SO A Capability Symbol Test Conditions V v CGR Tj = 25°C to 150°C Tj = 25°C to 150°C; ROE = 1 M ii


    OCR Scan     		PDF IXSH24N60U1/IXSH24N60U1S IXSH24N60 /IXSH24N60 O-247 24N60U1 24N60U1S 24N60U1 24N69AU1 24N60U1S 24W6QAU1S 24N60AU1 24n80

    T0263

    Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
    Text: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V *C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247T*I(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES


    OCR Scan     		PDF T0-220 PLUS247TM O-268 IS0PLUS247T OT-227B T0263 O-247 IXSA16N60 IXSP16N60 IXSH24N60 T0-263 IXSH25N120A IXSH30N60C IXSH15N120B

    T0247AC

    Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m


    OCR Scan     		PDF B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    XSH24N60

    Abstract: 24n60
    Text: P IX Y S HiPerFAST IGBT IXSH 24N60 IXSH 24N60A v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V " ces Tj = 25° C to 150° C 600 V VCGR Tj = 2 5°C tO 150°C; RGE= 1 Mi2 600 V vGES


    OCR Scan     		PDF 24N60 24N60A O-247 /XSH24N60 24N60A IXSH24N60U1 IXSH24N60AU1 XSH24N60

    ixsh40n60a

    Abstract: No abstract text available
    Text: OIXYS Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Typ« V v«» «»c c - typ . Chip dlmecn io n * S ource $ b o n tfw fi* V V A PF 600 2.5 2.3 2 2,3 22 10 16 20 20 20 750 920 1800 2760 4500 300 310 500 400 400 1X32


    OCR Scan     		PDF IXSD10N60 IXSD16N60 IXSD24N60 IXSD30N60 IXSD40N60 IXSD25N100 IXSD45N100 1XSD45N120 IXSD10N60A IXSD24N60A ixsh40n60a

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


    OCR Scan     		PDF O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel

    24N60AU

    Abstract: ixsh24n60au1 24n60au1 TO-247 weight
    Text: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V


    OCR Scan     		PDF 24N60U1 24N60AU1 IXSH24N60AU1 1999IXYS 24N60AU ixsh24n60au1 TO-247 weight

    10A600V

    Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
    Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU


    OCR Scan     		PDF HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V

    case style

    Abstract: IXSH35N100A
    Text: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES


    OCR Scan     		PDF O-268AA O-264 OT-227B PLUS247TM ISOPLUS247TM IXSH24N60 IXSH45N100 IXSH45N120* IXSH45N120B IXST45N120B case style IXSH35N100A

    Untitled

    Abstract: No abstract text available
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm


    OCR Scan     		PDF 3S88SSS588S8888gÂ

    Untitled

    Abstract: No abstract text available
    Text: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type V CB V CEtut Chip type 'c “h & CUlF Bize ch n w is Ions Source i bond wire Tjb = 150"C s o _i T2 OJ 0) a to JC CT ir mils 1 Dim. . out­ line No. V V A pF 600


    OCR Scan     		PDF IXSD16N60-3T IXSD24N60-4X IXSD30N60-5X 173x142 222x185 259x259 227x195 IXSH25N100A IXSH35N100A