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    ipt tyco

    Abstract: raychem 222k174 H0004 CS-1858
    Text: Raychem S p e cifica tio n Tyco Electronics P a r t No. M i n a H Max b Min a J Max b Control Drawing P ±10% b R + 10% b 5 ±10% b T ±10% b U ±10% b JO ±10% b HU ±20% b JW +20% b X +20% b Y ±20% b 222X121 24 0.941 10.4 14 5.6 10.41 (0.55) (0.22) 25


    OCR Scan     		PDF 222Kl oV-12 222X12J 222X132 RT-1312, S-1863 -222K132-12-CS-1836-0 CS-1858 -222K132-12-CS-1858-0 ipt tyco raychem 222k174 H0004

    IXGH24N50B

    Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
    Text: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out­ line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500


    OCR Scan     		PDF IXGD28N30-43 IXGD40N30-5X IXGD12N60B-33 IXGD31N60-4X IXGD41N60-5X IXGD60N60-7X IXGD200N60-9X IXGD8N100-2L IXGD12N100-33 IXGD17N100-4T IXGH24N50B IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100

    Untitled

    Abstract: No abstract text available
    Text: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type V CB V CEtut Chip type 'c “h & CUlF Bize ch n w is Ions Source i bond wire Tjb = 150"C s o _i T2 OJ 0) a to JC CT ir mils 1 Dim. . out­ line No. V V A pF 600


    OCR Scan     		PDF IXSD16N60-3T IXSD24N60-4X IXSD30N60-5X 173x142 222x185 259x259 227x195 IXSH25N100A IXSH35N100A