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    IXSH25N100A Search Results

    IXSH25N100A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXSH25N100A IXYS IGBT Chip: N Channel: 1000V: TO-247AD: 3-Pin Original PDF
    IXSH25N100A IXYS S Series MOSIGBTs Scan PDF
    IXSH25N100ASN IXYS IGBT Chip: N Channel: 1000V: TO-247AD: 3-Pin Original PDF

    IXSH25N100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    IXFD75N10

    Abstract: IXFD180N07-9X IXFD340N07-9Y
    Text: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type VCES VCE sat @ IC Cies typ. Chip type pF tfi typ. 25°C ns V V A 2 20 1800 500 IX4X 5.65 x 4.70 222 x 185 15 mil x 1 IXSH24N60 11 High Speed Low VCE(sat) TJM = 150°C


    Original     		PDF IXFH76N07-12 IXFX180N10 IXFN340N07 IXFX15N8085 IXFH67N10 IXFH75N10 IXFH75N10Q IXFH80N10Q IXFK170N10 IXFN230N10 IXFD75N10 IXFD180N07-9X IXFD340N07-9Y

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    ixsh40n60a

    Abstract: No abstract text available
    Text: OIXYS Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Typ« V v«» «»c c - typ . Chip dlmecn io n * S ource $ b o n tfw fi* V V A PF 600 2.5 2.3 2 2,3 22 10 16 20 20 20 750 920 1800 2760 4500 300 310 500 400 400 1X32


    OCR Scan     		PDF IXSD10N60 IXSD16N60 IXSD24N60 IXSD30N60 IXSD40N60 IXSD25N100 IXSD45N100 1XSD45N120 IXSD10N60A IXSD24N60A ixsh40n60a

    Untitled

    Abstract: No abstract text available
    Text: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type V CB V CEtut Chip type 'c “h & CUlF Bize ch n w is Ions Source i bond wire Tjb = 150"C s o _i T2 OJ 0) a to JC CT ir mils 1 Dim. . out­ line No. V V A pF 600


    OCR Scan     		PDF IXSD16N60-3T IXSD24N60-4X IXSD30N60-5X 173x142 222x185 259x259 227x195 IXSH25N100A IXSH35N100A