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Vishay Siliconix SIHB24N80AE-GE3 MOSFET N-CH 800V 21A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB24N80AE-GE3	Tube	1,036		1	1 $4.52 10 $4.52 100 $4.52 1000 $1.62273 10000 $1.5975	Buy Now
Vishay Siliconix SIHP24N80AEF-GE3 EF SERIES POWER MOSFET WITH FAST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP24N80AEF-GE3	Tube	873		1	1 $3.51 10 $2.329 100 $3.51 1000 $3.51 10000 $3.51	Buy Now
Vishay Siliconix SIHA24N80AE-GE3 MOSFET N-CH 800V 9A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHA24N80AE-GE3	Tube	752		1	1 $4.42 10 $4.42 100 $4.42 1000 $1.58294 10000 $1.5525	Buy Now
Vishay Siliconix SIHP24N80AE-GE3 MOSFET N-CH 800V 21A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP24N80AE-GE3	Tube	625		1	1 $4.32 10 $2.845 100 $4.32 1000 $1.53748 10000 $1.50125	Buy Now
Vishay Siliconix SIHG24N80AE-GE3 MOSFET N-CH 800V 21A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG24N80AE-GE3	Tube	460		1	1 $5.01 10 $5.01 100 $5.01 1000 $1.83375 10000 $1.83375	Buy Now
Bristol Electronics	SIHG24N80AE-GE3		450			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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24N80 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFR 24N80P VDSS ID25 = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 800 13 420 200 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	24N80P	PDF
TO-264 weight Abstract: 24N80P 24n80 ixfk24n80p N-channel MOSFET to-247 ixfh24n80p IXFT24N80P Text: PolarHVTM HiPerFET Power MOSFET IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A Ω RDS on ≤ 400 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	24N80P O-247 O-268 TO-264 weight 24N80P 24n80 ixfk24n80p N-channel MOSFET to-247 ixfh24n80p IXFT24N80P	PDF
24n80 Abstract: 24N80P ISOPLUS247 24N8 Text: PolarHVTM HiPerFET Power MOSFET IXFR 24N80P VDSS ID25 = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 800 13 420 200 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	24N80P 24n80 24N80P ISOPLUS247 24N8	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A Ω RDS on ≤ 400 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	24N80P O-247 O-268	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
scr 106d Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226 Text: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007	OCR Scan	to-18 2n876 2n884 2n877 2n885 2n3001 2n3005 2nw121 tag520f tag521f scr 106d SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226	PDF
scr tag 2 200 Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138 Text: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE	OCR Scan	2N2322 2N2322A BTX30- 2N2323 2N2323A BTX30-100 2N2324 2N2324A TAG611-100 TAG612-100 scr tag 2 200 scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138	PDF
BSTB0246 Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D Text: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA	OCR Scan	55-500M 55-600M 55-700M 55-800M 2-800RU 92-1000RM 92-1000RU 16N-400DM 16N-400DU 16N-600DM BSTB0246 BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D	PDF
24N60AU1 Abstract: 24n80 Text: HiPerFAST IGBT with Diode IXSH24N60U1/IXSH24N60U1S IXSH24N60 AU1 /IXSH24N60 All 1S v CES ^C25 V v CE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SO A Capability Symbol Test Conditions V v CGR Tj = 25°C to 150°C Tj = 25°C to 150°C; ROE = 1 M ii	OCR Scan	IXSH24N60U1/IXSH24N60U1S IXSH24N60 /IXSH24N60 O-247 24N60U1 24N60U1S 24N60U1 24N69AU1 24N60U1S 24W6QAU1S 24N60AU1 24n80	PDF
TRIAC TAG 280 600 Abstract: TAG 6 600 BT100A 27-600R BSTB0246 TRIAC TAG 626 400 TRIAC TAG 92 TRIAC btw 92 triac TAG bstb0226 Text: flffli] TR IA C IN METAL AND PLASTIC PACKAGE ^ y TC-220AB TO-66 o ij a r~\ n k ic in i i*j 12 A A RMS A NEW 30V 5 OV V k TAG TAB ! 1 DMC SALES TAG 240 IS O LA TED TYPE 241 P A D ESIG N ATIO N TAG 1Ç DMQ A PMC. FOR 245 TAG 246 IO 0V T A G 2 6 0 - 1 00 TAG261-100	OCR Scan	O-220AB TAG260-100 TAG261-100 TAG265-1 TAG266-1 TAG420-100 TAG425-100 TAG426-100 TAG260-200 TAG261-200 TRIAC TAG 280 600 TAG 6 600 BT100A 27-600R BSTB0246 TRIAC TAG 626 400 TRIAC TAG 92 TRIAC btw 92 triac TAG bstb0226	PDF
igbt to247 Abstract: s9011 IXGH24N60AU1S ixgh24N60 Text: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25	OCR Scan	IXGH24N60AU1 IXGH24N60AU1S T0-247 24N60AU1S) O-247 24N60AU1 B2-41 1XGH24N68AU1 W6H24WWMMl 24N80AU1 igbt to247 s9011 IXGH24N60AU1S ixgh24N60	PDF