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    IXFR48N60P Search Results

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    IXFR48N60P Price and Stock

    Littelfuse Inc IXFR48N60P

    MOSFET N-CH 600V 32A ISOPLUS247
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    DigiKey IXFR48N60P Tube 30
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    IXYS Corporation IXFR48N60P

    MOSFET 600V 48A
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    Mouser Electronics IXFR48N60P
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    TTI IXFR48N60P Tube 300
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    TME IXFR48N60P 1
    • 1 $20.22
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    New Advantage Corporation IXFR48N60P 1,323 1
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    IXFR48N60P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFR48N60P IXYS PolarHV HiPerFET Power MOSFET ISOPLUS247 Original PDF

    IXFR48N60P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48N60

    Abstract: ISOPLUS247 IXFR48N60P A160M
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 600 V = 32 A ≤ 160 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol


    Original     		PDF 48N60P ISOPLUS247TM 48N60 ISOPLUS247 IXFR48N60P A160M

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    IXFR48N60P

    Abstract: FS 8860 48n60 ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A ≤ 150 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 48N60P ISOPLUS247TM IXFR48N60P FS 8860 48n60 ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A Ω ≤ 150 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 48N60P ISOPLUS247TM