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    IRFN044 Search Results

    IRFN044 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFN044 International Rectifier HEXFET Power Mosfet Original PDF
    IRFN044 International Rectifier 60 Volt, 0.040 Ohm HEXFET POWER MOSFET Original PDF
    IRFN044 International Rectifier HEXFET Power Mosfet Original PDF
    IRFN044 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFN044SMD Semelab N-CHANNEL POWER MOSFET Original PDF

    IRFN044 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFN044

    Abstract: smd diode 44a
    Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN044 R DS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    1545A IRFN044 IRFN044 smd diode 44a PDF

    diode IN 34A

    Abstract: irfxxx
    Text: SEME IRFN044 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 34A Ω 0.040Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF


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    IRFN044 220SM 300ms, diode IN 34A irfxxx PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFN044 Device ➀ Repetitive Rating; Pulse width limited by ➁ ➂ ➃ ➄ maximum junction temperature. see figure 11 @ VDD = 25V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 44A, VGS = 10V, 25 ≤ RG ≤ 200Ω ISD ≤ 44A, di/dt ≤ 25A/µs,


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    PDF

    smd DIODE 44A

    Abstract: smd 44A IRFN044
    Text: Provisional Data Sheet No. PD-9.1545 HEXFET POWER MOSFET IRFN044 N-CHANNEL Ω HEXFET 60 Volt, 0.040Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.


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    IRFN044 smd DIODE 44A smd 44A IRFN044 PDF

    Untitled

    Abstract: No abstract text available
    Text: S EM E IRFN044SMD LA B MECHANICAL DATA N–CHANNEL POWER MOSFET VDSS ID cont RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )


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    IRFN044SMD 00A/ms 300ms, PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) 0.04 Ω IRFN044 ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    1545A IRFN044 PDF

    smd diode 44a

    Abstract: smd 2f IRFN044
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1545 HEXFET POWER MOSFET IRFN044 N-CHANNEL Ω HEXFET 60 Volt, 0.040Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.


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    IRFN044 smd diode 44a smd 2f IRFN044 PDF

    IRFN044SMD

    Abstract: No abstract text available
    Text: SEME IRFN044SMD LAB MECHANICAL DATA N–CHANNEL POWER MOSFET VDSS ID cont RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in .


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    IRFN044SMD 00A/ms 300ms, IRFN044SMD PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


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    IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261 PDF

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


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    DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF PDF

    to276

    Abstract: No abstract text available
    Text: SEME IRF044SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


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    IRF044SMD IRFN044" IRFN044SMD IRFN044SMD-JQR-B O276AB) 2400pF 130nC 130nC to276 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: — » In t0 f fi QtÎO n Q I IOR Rectifier provisional Data Sheet No. PD-9.1545 HEXFET POWER MOSFET IRFN044 N -C H A N N E L Product Summary 60 Volt, 0.040« HEXFET H E X F E T technology is the key to International Rectifier’s advanced line of power MOSFET transis­


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    IRFN044 4AS54S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: im itti mi SEME IRFN044 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 60V 34A DSS 0.25 I D(cont) 3.0 0.040Q ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS


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    IRFN044 O-220SM 300ms, 000150b PDF

    Untitled

    Abstract: No abstract text available
    Text: Illl W . mi SEME IRFN044 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 60V 34A 0.040ft VDSS 11.5 0.25 I D(cont) 3.0 ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS


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    IRFN044 040ft O-220SM 340mJ 300ms, PDF

    SMD diode c5c

    Abstract: No abstract text available
    Text: |p | 0 pp 11 q ^ I Provisional Datd ShGGt No. PD-9.1545 IQR Rectifier HEXFET POWER MOSFET IRFN044 N -C H A N N E L 60 Volt, 0 .0 4 0 0 HEXFET H E X F E T technology is the key to International Rectifier's advanced line of power MOSFET transis­ tors. The efficient geometry achieves very low onstate resistance combined with high transconductance.


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    PDF

    MNT-LB32N16-C4

    Abstract: T0254 sml1001r1avr SM5104
    Text: SEMELABpIc SELECTOR GUIDE MOS PRODUCTS VDSS Type_No Technology Polarity Package IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340 IRFM350 IRFM360 IRFM440 IRFM460 IRFM9140 IRFM9240 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250


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    ei998 IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 MNT-LB32N16-C4 T0254 sml1001r1avr SM5104 PDF

    Diode SMD ED 9C

    Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
    Text: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are


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    I-445 Diode SMD ED 9C FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428 PDF

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


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    IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD PDF

    MO-D36AB

    Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
    Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for


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    MIL-S-19500 T0-254AA T0-204AA/AE MO-D36AB IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542 PDF

    n10 smd

    Abstract: No abstract text available
    Text: International Government and Space HEXFET Power MOSFETs [ ÏQ R R e c t ï f ie r Hermetic Package N & P Channel Part b v d ss RDS on Number (V) (Ohms) lp @ Tc = 100"C RthJC Max. Pd @ TC = 25°C Outline «1 (A) (K/W) (W) Number (1) IRFE024 60 0.15 6.7 4.2


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    IRFE024 IRFE110 IRFE120 IRFE130 IRFE210 IRFE220 IRFE230 IRFE310 IRFE320 IRFE330 n10 smd PDF

    Untitled

    Abstract: No abstract text available
    Text: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number


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    IRHM7250 IRHM3250 IRHM4250 IRHM8250 JANSR2N7269 JANSF2N7269 JANSG2N7269 JANSH2N7269 IRHM7260 IRHM8260 PDF