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    IRF6 Price and Stock

    Infineon Technologies AG IRF640NSTRLPBF

    MOSFET N-CH 200V 18A D2PAK
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    DigiKey IRF640NSTRLPBF Cut Tape 33,065 1
    • 1 $2.28
    • 10 $1.462
    • 100 $2.28
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    IRF640NSTRLPBF Digi-Reel 33,065 1
    • 1 $2.28
    • 10 $1.462
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    IRF640NSTRLPBF Reel 32,000 800
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    • 10000 $0.6575
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    Avnet Americas IRF640NSTRLPBF Reel 4,800 10 Weeks 800
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    Mouser Electronics IRF640NSTRLPBF 6,808
    • 1 $1.84
    • 10 $1.34
    • 100 $1.01
    • 1000 $0.657
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    Newark IRF640NSTRLPBF Cut Tape 1,172 1
    • 1 $1.72
    • 10 $1.39
    • 100 $1.17
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    RS IRF640NSTRLPBF Bulk 10
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    • 1000 $1.38
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    TME IRF640NSTRLPBF 798 1
    • 1 $0.89
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    Chip 1 Exchange IRF640NSTRLPBF 40,414
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    Chip1Stop IRF640NSTRLPBF 4,800
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    IRF640NSTRLPBF Cut Tape 3,306
    • 1 $1.1
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    • 100 $0.733
    • 1000 $0.489
    • 10000 $0.447
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    IRF640NSTRLPBF 1,600
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    IRF640NSTRLPBF 734
    • 1 $1.5665
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    EBV Elektronik IRF640NSTRLPBF 2,400 11 Weeks 800
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    New Advantage Corporation IRF640NSTRLPBF 36,800 1
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    Win Source Electronics IRF640NSTRLPBF 433,372
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    Rochester Electronics LLC IRF644

    14A, 250V, 0.28 OHM, N-CHANNEL
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    DigiKey IRF644 Bulk 24,196 151
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    Rochester Electronics LLC IRF6662TRPBF

    IRF6662 - 12V-300V N-CHANNEL POW
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    DigiKey IRF6662TRPBF Bulk 9,114 254
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    • 1000 $1.19
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    Infineon Technologies AG IRF630NPBF

    MOSFET N-CH 200V 9.3A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF630NPBF Tube 6,805 1
    • 1 $1.65
    • 10 $1.65
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    • 1000 $0.50626
    • 10000 $0.42288
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    Avnet Americas IRF630NPBF Tube 4,390 10 Weeks 1
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    Mouser Electronics IRF630NPBF 5,228
    • 1 $0.99
    • 10 $0.772
    • 100 $0.615
    • 1000 $0.439
    • 10000 $0.422
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    Newark IRF630NPBF Bulk 227 1
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    Rochester Electronics IRF630NPBF 700 1
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    TME IRF630NPBF 216 1
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    Ameya Holding Limited IRF630NPBF 1,000
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    Chip 1 Exchange IRF630NPBF 1,508
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    Chip1Stop IRF630NPBF 148,404
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    IRF630NPBF Tube 13,874
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    IRF630NPBF 9,019
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    IRF630NPBF 2,263
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    IRF630NPBF 1,160
    • 1 $0.811
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    • 100 $0.587
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    EBV Elektronik IRF630NPBF 96,000 11 Weeks 1,000
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    New Advantage Corporation IRF630NPBF 1,300 1
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    Win Source Electronics IRF630NPBF 238,874
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    Wuhan P&S IRF630NPBF 1,000 1
    • 1 $0.53
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    • 100 $0.44
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    Infineon Technologies AG IRF6727MTRPBF

    MOSFET N-CH 30V 32A DIRECTFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF6727MTRPBF Digi-Reel 6,483 1
    • 1 $3.19
    • 10 $2.078
    • 100 $3.19
    • 1000 $1.08545
    • 10000 $1.04363
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    IRF6727MTRPBF Cut Tape 6,483 1
    • 1 $3.19
    • 10 $2.078
    • 100 $3.19
    • 1000 $1.08545
    • 10000 $1.04363
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    IRF6727MTRPBF Reel 4,800 4,800
    • 1 -
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    • 10000 $1.04363
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    Avnet Americas IRF6727MTRPBF Reel 9,600 12 Weeks 4,800
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    Mouser Electronics IRF6727MTRPBF 12,408
    • 1 $2.48
    • 10 $2.06
    • 100 $1.64
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    Newark IRF6727MTRPBF Reel 9,600 4,800
    • 1 $1.3
    • 10 $1.3
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    Rochester Electronics IRF6727MTRPBF 13 1
    • 1 $1.22
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    TME IRF6727MTRPBF 4,800
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    • 10000 $1.63
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    Chip1Stop IRF6727MTRPBF 30
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    Win Source Electronics IRF6727MTRPBF 22,020
    • 1 -
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    Find more IRF6 price and stock on Findchips.com

    IRF6 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF604S International Rectifier HEXFET Power MOSFET Scan PDF
    IRF60B217 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 60A Original PDF
    IRF60DM206 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 130A Original PDF
    IRF60DM206ATMA1 Infineon Technologies MOSFET N-CH 60V 130A DIRECTFET Original PDF
    IRF60R217 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 58A Original PDF
    IRF60SC241ARMA1 Infineon Technologies MOSFET N-CH 60V 360A TO263-7 Original PDF
    IRF610 Fairchild Semiconductor 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Original PDF
    IRF610 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF610 Intersil 3.3A, 200V, 1.500 ?, N-Channel Power MOSFET Original PDF
    IRF610 Texas Instruments High-Speed CMOS Logic Quad D-Type Flip-Flop with Reset Original PDF
    IRF610 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF610 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 3.3A TO-220AB Original PDF
    IRF610 Fairchild Semiconductor N-Channel Power MOSFETs, 3.5A, 150-200V Scan PDF
    IRF610 FCI POWER MOSFETs Scan PDF
    IRF610 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF610 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF610 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. Scan PDF
    IRF610 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF610 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 3.3A, Pkg Style TO-220AB Scan PDF
    IRF610 International Rectifier HEXFET Power MOSFET Scan PDF
    ...

    IRF6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power MOSFET IRF610

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 power MOSFET IRF610

    Untitled

    Abstract: No abstract text available
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF620S, SiHF620S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF634

    Abstract: IRF634FP
    Text: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3


    Original     		PDF IRF634 IRF634FP O-220/TO-220FP O-220 O-220FP IRF634 IRF634FP

    Untitled

    Abstract: No abstract text available
    Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF644, SiHF644 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF640 applications note

    Abstract: IRF640 circuit
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit

    Untitled

    Abstract: No abstract text available
    Text: PD - 97274C IRF6716MPbF IRF6716MTRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS l Dual Sided Cooling Compatible  25V max ±20V max l Ultra Low Package Inductance


    Original     		PDF 97274C IRF6716MPbF IRF6716MTRPbF

    IRF6714MTR1PBF

    Abstract: IRF6714MTRPBF stencil
    Text: PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l RoHs Compliant and Halogen Free  Low Profile <0.6 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters


    Original     		PDF 6130A IRF6714MPbF IRF6714MTRPbF IRF6714MTR1PBF IRF6714MTRPBF stencil

    transistor smd c5c

    Abstract: transistor SMD R4d SMD diode C5C smd transistor r4D smd transistor R2C smd diode r4a MLQP48 smd transistor r4c r2d SMD Transistor IRS2093
    Text: IRAUDAMP8 120W x 4 Channel Class D Audio Power Amplifier Using the IRS2093M and IRF6665 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP8 Demo board;


    Original     		PDF IRS2093M IRF6665 transistor smd c5c transistor SMD R4d SMD diode C5C smd transistor r4D smd transistor R2C smd diode r4a MLQP48 smd transistor r4c r2d SMD Transistor IRS2093

    IRF620

    Abstract: IRF620FP
    Text: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK


    Original     		PDF IRF620 IRF620FP O-220/FP O-220FP O-220 IRF620 IRF620FP

    IRF646

    Abstract: TB334
    Text: IRF646 Data Sheet January 2002 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET Features • 14A, 275V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF646 TA17423. TB334 IRF646 TB334

    IRF630M

    Abstract: IRF630MFP
    Text: IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630M 200 V < 0.40 Ω 9A IRF630FPM 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF630M IRF630MFP O-220/TO-220FP IRF630FPM O-220 O-220 O-220FP IRF630M IRF630MFP

    Untitled

    Abstract: No abstract text available
    Text: PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039


    Original     		PDF IRF644PbF O-220AB 12-Mar-07

    IRF640

    Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco

    Untitled

    Abstract: No abstract text available
    Text: PD - 95116 IRF644SPbF • Lead-Free Document Number: 91040 3/16/04 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040


    Original     		PDF IRF644SPbF 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from


    Original     		PDF 94107B IRF644N IRF644NS IRF644NL 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 94870 IRF620PbF • Lead-Free 12/5/03 Document Number: 91027 www.vishay.com 1 IRF620PbF Document Number: 91027 www.vishay.com 2 IRF620PbF Document Number: 91027 www.vishay.com 3 IRF620PbF Document Number: 91027 www.vishay.com 4 IRF620PbF Document Number: 91027


    Original     		PDF IRF620PbF O-220AB 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω


    Original     		PDF IRF634N IRF634NS IRF634NL O-220 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF614

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration


    Original     		PDF IRF614, SiHF614 O-220 O-220 18-Jul-08 IRF614

    IRF6215

    Abstract: No abstract text available
    Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91479B IRF6215 -150V O-220 IRF6215

    IRF6604

    Abstract: No abstract text available
    Text: PD - 94365B IRF6604 HEXFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Power MOSFET


    Original     		PDF 94365B IRF6604 IRF6604

    IRF610

    Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
    Text: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF IRF610-613 MTP2N18/2N20 O-22QAB IRF610 IRF611 IRF612 IRF613 MTP2N18 NITP2N20 IRF610/612 IRF610 IRF612 irf P 611 IRF611 IRF613 MTP2N18 MTP2N20

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan     		PDF DD3711b T-39-01 CMD8

    Untitled

    Abstract: No abstract text available
    Text: IRF624A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V


    OCR Scan     		PDF IRF624A