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    IRF64 Price and Stock

    Infineon Technologies AG IRF640NSTRLPBF

    MOSFET N-CH 200V 18A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF640NSTRLPBF Cut Tape 18,729 1
    • 1 $2.1
    • 10 $1.346
    • 100 $2.1
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    IRF640NSTRLPBF Digi-Reel 18,729 1
    • 1 $2.1
    • 10 $1.346
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    IRF640NSTRLPBF Reel 18,400 800
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    • 10000 $0.58675
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    Avnet Americas IRF640NSTRLPBF Reel 800 18 Weeks 800
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    • 1000 $0.47726
    • 10000 $0.46162
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    IRF640NSTRLPBF Ammo Pack 16 Weeks, 3 Days 1
    • 1 $1.9
    • 10 $1.37
    • 100 $1.03
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    Mouser Electronics IRF640NSTRLPBF
    • 1 $1.87
    • 10 $1.27
    • 100 $0.891
    • 1000 $0.611
    • 10000 $0.586
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    Newark IRF640NSTRLPBF Cut Tape 1,162 1
    • 1 $1.9
    • 10 $1.37
    • 100 $1.03
    • 1000 $1.02
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    RS IRF640NSTRLPBF Bulk 10
    • 1 -
    • 10 $1.33
    • 100 $1.26
    • 1000 $1.13
    • 10000 $1.13
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    TME IRF640NSTRLPBF 596 1
    • 1 $1.444
    • 10 $0.8
    • 100 $0.613
    • 1000 $0.499
    • 10000 $0.499
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    Chip 1 Exchange IRF640NSTRLPBF 40,414
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    Chip One Stop IRF640NSTRLPBF Cut Tape 1,551
    • 1 $1.24
    • 10 $0.91
    • 100 $0.783
    • 1000 $0.469
    • 10000 $0.469
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    EBV Elektronik IRF640NSTRLPBF 4,800 19 Weeks 800
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    New Advantage Corporation IRF640NSTRLPBF 4,000 1
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    • 1000 $1.37
    • 10000 $1.27
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    Win Source Electronics IRF640NSTRLPBF 433,372
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    • 1000 $0.3731
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    Vishay Siliconix IRF640STRRPBF

    MOSFET N-CH 200V 18A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF640STRRPBF Cut Tape 1,458 1
    • 1 $3.77
    • 10 $2.467
    • 100 $3.77
    • 1000 $3.77
    • 10000 $3.77
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    IRF640STRRPBF Digi-Reel 1,458 1
    • 1 $3.77
    • 10 $2.467
    • 100 $3.77
    • 1000 $3.77
    • 10000 $3.77
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    IRF640STRRPBF Reel 800 800
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    • 1000 $1.34181
    • 10000 $1.34181
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    Vishay Siliconix IRF640PBF

    MOSFET N-CH 200V 18A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF640PBF Bulk 1,016 1
    • 1 $2.73
    • 10 $2.73
    • 100 $2.73
    • 1000 $0.89838
    • 10000 $0.80312
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    RS IRF640PBF Bulk 1,000
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    • 1000 $2.08
    • 10000 $1.98
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    Bristol Electronics IRF640PBF 80
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    Vishay Siliconix IRF644PBF

    MOSFET N-CH 250V 14A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF644PBF Tube 1,016 1
    • 1 $2.46
    • 10 $2.46
    • 100 $2.46
    • 1000 $0.79674
    • 10000 $0.69712
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    RS IRF644PBF Bulk 1,000
    • 1 -
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    • 1000 $2.9
    • 10000 $2.75
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    Vishay Siliconix IRF644STRRPBF

    MOSFET N-CH 250V 14A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF644STRRPBF Cut Tape 605 1
    • 1 $4.7
    • 10 $3.113
    • 100 $4.7
    • 1000 $4.7
    • 10000 $4.7
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    IRF644STRRPBF Digi-Reel 605 1
    • 1 $4.7
    • 10 $3.113
    • 100 $4.7
    • 1000 $4.7
    • 10000 $4.7
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    IRF64 Datasheets (260)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF640 Fairchild Semiconductor 18A, 200V, 0.180 ?, N-Channel Power MOSFETs Original PDF
    IRF640 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF640 Intersil 18A, 200V, 0.180 ?, N-Channel Power MOSFETs Original PDF
    IRF640 On Semiconductor Power Field Effect Transistor Original PDF
    IRF640 Philips Semiconductors N-channel TrenchMOS transistor Original PDF
    IRF640 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 18A TO-220 Original PDF
    IRF640 STMicroelectronics N-Channel 200V - 0.150 Ohm - 18A TO-220-TO-220FP MESH OVERLAY MOSFET Original PDF
    IRF640 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRF640 STMicroelectronics N-CHANNEL 200V - 0.150 Ohm - 18A TO-220-TO-220FP Original PDF
    IRF640 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF640 FCI POWER MOSFETs Scan PDF
    IRF640 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF640 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF640 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF640 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF640 International Rectifier HEXFET Power Mosfet Scan PDF
    IRF640 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 200V, 18A, Pkg Style TO-220AB Scan PDF
    IRF640 Motorola Switchmode Datasheet Scan PDF
    IRF640 Motorola European Master Selection Guide 1986 Scan PDF
    IRF640 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    IRF64 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    IRF644, SiHF644 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRF640 applications note

    Abstract: IRF640 circuit
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit PDF

    IRF646

    Abstract: TB334
    Text: IRF646 Data Sheet January 2002 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET Features • 14A, 275V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original
    IRF646 TA17423. TB334 IRF646 TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039


    Original
    IRF644PbF O-220AB 12-Mar-07 PDF

    IRF640

    Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


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    IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95116 IRF644SPbF • Lead-Free Document Number: 91040 3/16/04 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040


    Original
    IRF644SPbF 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from


    Original
    94107B IRF644N IRF644NS IRF644NL 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF644B/IRFS644B O-220 FP001 O-220F IRFS644B FP001 PDF

    MOSFET 640N

    Abstract: IRF640NS irf640* spice irf640n circuit using irf640n
    Text: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER


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    IRF640N/IRF640NS/IRF640NL O-263 O-262 O-220 100oC, MOSFET 640N IRF640NS irf640* spice irf640n circuit using irf640n PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF644S FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 14 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original
    IRF644S PDF

    TB334

    Abstract: IRF646
    Text: IRF646 Data Sheet Title F64 bt A, 5V, 80 m, Cha el wer OST utho June 1999 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original
    IRF646 IRF646 TB334 PDF

    UC60

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: IRF643 CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    O-220AB IRF643 UC60 PDF

    irf640

    Abstract: IRF640FP IRF640 P CHANNEL MOSFET
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original
    IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET PDF

    irf640

    Abstract: 5d surface mount diode IRF640L IRF640S SiHF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)


    Original
    IRF640S, IRF640L, SiHF640S SiHF640L O-263) O-262) 18-Jul-08 irf640 5d surface mount diode IRF640L IRF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF PDF

    IRF640PBF

    Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    IRF640, SiHF640 O-220 O-220 50lectual 18-Jul-08 IRF640PBF IRF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3 PDF

    IRF640B

    Abstract: irfs640b IRF series
    Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF640B/IRFS640B IRF640B irfs640b IRF series PDF

    IRF644B

    Abstract: IRFS644B IRF series mosfet irf 150
    Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    IRF644B/IRFS644B O-220 IRF644B IRFS644B IRF series mosfet irf 150 PDF

    IRF640

    Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
    Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


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    IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco PDF

    IRF640

    Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
    Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original
    IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97 PDF

    IRF644N

    Abstract: IRF644NL IRF644NS SiHF644N SiHF644N-E3 SiHF644NS SiHF644NS-E3
    Text: IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 250 V RDS(on) (Ω) VGS = 10 V • Dynamic dV/dt Rating 0.240 RoHS* • 175 °C Operating Temperature


    Original
    IRF644N, IRF644NS, IRF644NL, SiHF644N SiHF644NS SiHF644NL O-262) O-220 O-263) 18-Jul-08 IRF644N IRF644NL IRF644NS SiHF644N-E3 SiHF644NS-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.28 68 Qgs (nC) 11 Qgd (nC) 35 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D S G • Halogen-free According to IEC 61249-2-21


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    IRF644S, SiHF644S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    irf6401

    Abstract: IRF640R IRF642R 640r IFIF643R IRF641R IRF643R
    Text: Rugged Power M OSFETs_ IRF640R, IRF641R, IRF642R, IRF643R File Num ber 2010 Avalanche Energy Rated N-Channel Power MOSFETs 1 6 A a n d rDs on N -C H A N N E L E N H A N C E M E N T M O D E 18A , 2 0 0 V , 1 5 0 V = 0 .1 8 0 a n d 0 .2 2 0


    OCR Scan
    IRF640R, IRF641R, IRF642R, IRF643R 92CS-42658 IRF642R IFIF643R F640R irf6401 IRF640R 640r IRF641R IRF643R PDF

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF640/641 FEATURES • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    IRF640/641 IRF640 IRF641 PDF

    IRF644A

    Abstract: No abstract text available
    Text: IRF644A A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan
    IRF644A IRF644A PDF