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    IRF730 Price and Stock

    UMW IRF7309TR

    MOSFET N/P-CH 30V 4A 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF7309TR Cut Tape 3,000 1
    • 1 $0.81
    • 10 $0.541
    • 100 $0.81
    • 1000 $0.269
    • 10000 $0.269
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    IRF7309TR Digi-Reel 3,000 1
    • 1 $0.81
    • 10 $0.541
    • 100 $0.81
    • 1000 $0.269
    • 10000 $0.269
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    IRF7309TR Reel 3,000 3,000
    • 1 -
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    • 10000 $0.23643
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    Vishay Siliconix IRF730PBF-BE3

    MOSFET N-CH 400V 5.5A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF730PBF-BE3 Tube 2,982 1
    • 1 $2.29
    • 10 $2.29
    • 100 $2.29
    • 1000 $0.73496
    • 10000 $0.63362
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    New Advantage Corporation IRF730PBF-BE3 2,000 1
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    • 1000 $0.5403
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    UMW IRF7301TR

    MOSFET 2N-CH 20V 5.2A 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF7301TR Digi-Reel 2,980 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
    • 10000 $0.22442
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    IRF7301TR Cut Tape 2,980 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
    • 10000 $0.22442
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    UMW IRF7307TR

    MOSFET 2N-CH 20V 5.2A 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF7307TR Digi-Reel 2,898 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
    • 10000 $0.22442
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    IRF7307TR Cut Tape 2,898 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
    • 10000 $0.22442
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    Vishay Siliconix IRF730ASPBF

    MOSFET N-CH 400V 5.5A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF730ASPBF Tube 1,497 1
    • 1 $3.02
    • 10 $3.02
    • 100 $3.02
    • 1000 $1.01216
    • 10000 $0.92375
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    ComSIT USA IRF730ASPBF 9,000
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    Find more IRF730 price and stock on Findchips.com

    IRF730 Datasheets (167)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF730 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF730 Intersil 5.5A, 400V, 1.000 ?, N-Channel Power MOSFET Original PDF
    IRF730 Philips Semiconductors PowerMOS transistor Avalanche energy rated Original PDF
    IRF730 STMicroelectronics N-CHANNEL 400V - 0.75 ? - 5.5A - TO-220 POWERME Original PDF
    IRF730 STMicroelectronics N-channel power MOSFET, 5.5 A, 400V. Original PDF
    IRF730 STMicroelectronics N - CHANNEL 400V - 0.75 W - 5.5A - TO-220 PowerMESH MOSFET Original PDF
    IRF730 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 5.5A TO-220 Original PDF
    IRF730 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF730 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 5.5A TO-220AB Original PDF
    IRF730 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5A, 350 V/400V Scan PDF
    IRF730 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF730 FCI POWER MOSFETs Scan PDF
    IRF730 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF730 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF730 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. Scan PDF
    IRF730 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF730 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF730 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF730 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF730 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 400V, 5.5A, Pkg Style TO-220AB Scan PDF
    ...

    IRF730 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 flyback xfmr 3.5 mh PDF

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 flyback xfmr 3.5 mh PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		IRF730B O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRF7306

    Abstract: No abstract text available
    Text: PD - 9.1241C IRF7306 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 Description 1 8 2 7 3 6 4 5 D1 VDSS = -30V


    Original     		1241C IRF7306 IRF7306 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		IRF730B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF730A, SiHF730A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRF7303

    Abstract: MS-012AA 24v transformer
    Text: PD - 9.1239D IRF7303 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V


    Original     		1239D IRF7303 IRF7303 MS-012AA 24v transformer PDF

    IRF730B

    Abstract: No abstract text available
    Text: IRF730B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRF730B O-22ner IRF730B PDF

    IRF730FI

    Abstract: IRF730 OC470 irf730f
    Text: IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF730 IRF730FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 1Ω < 1Ω 5.5 A 3.5 A TYPICAL RDS(on) = 0.82 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		IRF730 IRF730FI 100oC O-220 ISOWATT220 IRF730FI IRF730 OC470 irf730f PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free


    Original     		IRF7309PbF-1 IRF7309TRPr D-020D PDF

    AN609

    Abstract: IRF730 SiHF730
    Text: IRF730_RC, SiHF730_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRF730 SiHF730 AN609, 12-Mar-10 AN609 PDF

    7386

    Abstract: AN609 IRF730AL IRF730AS SiHF730AL SiHF730AS 90259
    Text: IRF730AS_RC, IRF730AL_RC, SiHF730AS_RC, SiHF730AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		IRF730AS IRF730AL SiHF730AS SiHF730AL AN609, 12-Mar-10 7386 AN609 90259 PDF

    AN1001

    Abstract: AN-994 IRF730A
    Text: PD-93772A IRF730AS/L SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PD-93772A IRF730AS/L AN1001) 12-Mar-07 AN1001 AN-994 IRF730A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95115 IRF730SPbF • Lead-Free Document Number: 91048 3/16/04 www.vishay.com 1 IRF730SPbF Document Number: 91048 www.vishay.com 2 IRF730SPbF Document Number: 91048 www.vishay.com 3 IRF730SPbF Document Number: 91048 www.vishay.com 4 IRF730SPbF Document Number: 91048


    Original     		IRF730SPbF 12-Mar-07 PDF

    IRF730FI

    Abstract: IRF730
    Text: IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF730 IRF730FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 1Ω < 1Ω 5.5 A 3.5 A TYPICAL RDS(on) = 0.82 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		IRF730 IRF730FI 100oC O-220 ISOWATT220 IRF730FI IRF730 PDF

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan     		DD3711b T-39-01 CMD8 PDF

    ld33a

    Abstract: LD33A SMD MARKING AN-994 IRF730S SMD-220 ld33
    Text: PD-9.1009 International m u Rectifier IRF730S HEXFET P o w er M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V


    OCR Scan     		IRF730S SMD-220 ld33a LD33A SMD MARKING AN-994 IRF730S ld33 PDF

    IRF730

    Abstract: 733 331 IRFP330 731 MOSFET IRF731 IRFP331 331Z Z012I IRF732 dd173d
    Text: SA M S UN G E L E C T R O N I C S INC b7E D • V T b M l M S D G I T S T T 523 ■ SUCK N-CHANNEL POWER MOSFETS IRF730/731Z732/733 IRFP330/331/332/333 FEATURES • • • • • • • TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times


    OCR Scan     		IRF730/731Z732/733 IRFP330/331/332/333 IRF730/IRFP330 IRF731 /IRFP331 IRF732/IRFP332 IRF733/IRFP333 T0-220 IRF730/7 IRF730 733 331 IRFP330 731 MOSFET IRFP331 331Z Z012I IRF732 dd173d PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		IRF730A PDF

    SEC IRF730

    Abstract: No abstract text available
    Text: IRF730 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		IRF730 SEC IRF730 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF730 Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilico n Gate T M O S This TMOS Power FET is designed fo r high vo lt­ age, high speed power sw itching applications such as sw itching regulators, converters, solenoid and


    OCR Scan     		IRF730 O-220) GlD273b PDF

    LT 33 diode surface mount

    Abstract: No abstract text available
    Text: PD - 9.1238C International IG R Rectifier IRF7301 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V dss = 2 0 V


    OCR Scan     		1238C IRF7301 MS-012AA. IRF7101 F7101 LT 33 diode surface mount PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730A Advanced Power MOSFET FEATURES B ^D S S - ♦ Avalanche Rugged Technology cn cn a ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1 .0 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		IRF730A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1241C International I G R Rectifier IRF7306 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V d s s = -3 0 V


    OCR Scan     		1241C IRF7306 PDF