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    Vishay Intertechnologies SIHF610S-GE3

    Transistor: N-MOSFET; unipolar; 200V; 2.1A; Idm: 10A; 36W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF610S-GE3 1
    • 1 $0.782
    • 10 $0.569
    • 100 $0.451
    • 1000 $0.421
    • 10000 $0.421
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    EBV Elektronik SIHF610S-GE3 14 Weeks 50
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    SIHF610 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power MOSFET IRF610

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 power MOSFET IRF610

    IRF610

    Abstract: MOSFET dynamic irf610pbf power MOSFET IRF610
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF610 MOSFET dynamic irf610pbf power MOSFET IRF610

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF610S, SiHF610S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF610S, SiHF610S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF610S, SiHF610S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF610S

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF610S, SiHF610S O-263) 2002/95/EC 11-Mar-11 IRF610S

    Untitled

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF610S, SiHF610S SMD-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF610S, SiHF610S 2002/95/EC O-263) 11-Mar-11

    AN609

    Abstract: IRF610 90239 90-239 IRF610R
    Text: IRF610_RC, SiHF610_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF610 SiHF610 AN609, 01-Mar-10 AN609 90239 90-239 IRF610R

    Untitled

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF610S, SiHF610S SMD-220 18-Jul-08

    IRF610S

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRF610S, SiHF610S O-263) 18-Jul-08 IRF610S

    Untitled

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF610

    Abstract: irf610 ir power MOSFET IRF610
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF610, SiHF610 O-220 O-220 12-Mar-07 IRF610 irf610 ir power MOSFET IRF610

    Untitled

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF610

    Abstract: power MOSFET IRF610 IRF610PBF MOSFET irf610 mosfet
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF610, SiHF610 O-220 O-220 18-Jul-08 IRF610 power MOSFET IRF610 IRF610PBF MOSFET irf610 mosfet

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF610S, SiHF610S 2002/95/EC O-263) 18-Jul-08

    power MOSFET IRF610

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB 11-Mar-11 power MOSFET IRF610

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 1.5 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single G G D D2PAK (TO-263)


    Original     		PDF IRF610S, SiHF610S IRF610L, SiHF610L O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A